公开(公告)号：US20130264679A1

公开(公告)日：2013-10-10

申请号：US13440172

申请日：2012-04-05

申请人： Arvind Kumar ,  Anthony I. Chou ,  Renee T. Mo ,  Shreesh Narasimha

发明人： Arvind Kumar ,  Anthony I. Chou ,  Renee T. Mo ,  Shreesh Narasimha

IPC分类号： H01L29/86 ,  H01L21/02

CPC分类号： H01L23/5256 ,  H01L21/84 ,  H01L28/20 ,  H01L29/86 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure providing a precision resistive element and method of fabrication is disclosed. Polysilicon is embedded in a silicon substrate. The polysilicon may be doped to control the resistance. Embodiments may include resistors, eFuses, and silicon-on-insulator structures. Some embodiments may include non-rectangular cross sections.

摘要翻译： 公开了提供精密电阻元件的半导体结构和制造方法。 多晶硅嵌入在硅衬底中。 可以掺杂多晶硅以控制电阻。 实施例可以包括电阻器，eFuse和绝缘体上硅结构。 一些实施例可以包括非矩形横截面。

公开(公告)号：US20080188089A1

公开(公告)日：2008-08-07

申请号：US11671668

申请日：2007-02-06

申请人： Anthony I. Chou ,  Sadanand V. Deshpande ,  Renee T. Mo ,  Shreesh Narasimha ,  Katsunori Onishi ,  Dominic Schepis

发明人： Anthony I. Chou ,  Sadanand V. Deshpande ,  Renee T. Mo ,  Shreesh Narasimha ,  Katsunori Onishi ,  Dominic Schepis

IPC分类号： H01L21/31

CPC分类号： H01L21/32105 ,  H01L21/28035 ,  H01L21/28247

摘要： A method for reducing top notching effects in pre-doped gate structures includes subjecting an etched, pre-doped gate stack structure to a re-oxidation process, the re-oxidation process comprising a radical assisted re-oxidation process so as to result in the formation of an oxide layer over vertical sidewall and horizontal top surfaces of the etched gate stack structure. The resulting oxide layer has a substantially uniform thickness independent of grain boundary orientations of the gate stack structure and independent of the concentration and location of dopant material present therein.

摘要翻译： 用于减少预掺杂栅极结构中的顶部切口效应的方法包括将经蚀刻的预掺杂栅极堆叠结构进行再氧化处理，所述再氧化工艺包括自由基辅助再氧化工艺，以便导致 在蚀刻的栅堆叠结构的垂直侧壁和水平顶表面上形成氧化物层。 所得到的氧化物层具有与栅极堆叠结构的晶界取向无关的基本均匀的厚度，而与其中存在的掺杂剂材料的浓度和位置无关。

公开(公告)号：US07518145B2

公开(公告)日：2009-04-14

申请号：US11627001

申请日：2007-01-25

申请人： Anthony I. Chou ,  Renee T. Mo ,  Shreesh Narasimha

发明人： Anthony I. Chou ,  Renee T. Mo ,  Shreesh Narasimha

IPC分类号： H01L29/10

CPC分类号： H01L21/28202 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method comprises forming a material over a substrate and patterning the material to remove portions of the material and expose an underlying portion of the substrate. The method further includes performing an oxidation process to form an oxide layer over the exposed portion of the substrate and at an interface between the material and the substrate. A circuit comprises a non-critical device and an oxide formed as part of this non-critical device. A high-K dielectric material is formed over a substrate as part of the critical device within the circuit. An oxide based interface is provided between the high-K dielectric material and an underlying substrate. A second method forms a nitride or oxynitride as the first material.

摘要翻译： 一种方法包括在衬底上形成材料并图案化材料以去除材料的部分并暴露衬底的下面部分。 该方法还包括进行氧化处理以在衬底的暴露部分和材料与衬底之间的界面处形成氧化物层。 电路包括非关键器件和形成为该非关键器件的一部分的氧化物。 高K电介质材料形成在衬底上，作为电路内关键器件的一部分。 在高K电介质材料和下层衬底之间提供氧化物基界面。 第二种方法形成氮化物或氧氮化物作为第一种材料。

公开(公告)号：US20080179714A1

公开(公告)日：2008-07-31

申请号：US11627001

申请日：2007-01-25

申请人： Anthony I. Chou ,  Renee T. Mo ,  Shreesh Narasimha

发明人： Anthony I. Chou ,  Renee T. Mo ,  Shreesh Narasimha

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： H01L21/28202 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method comprises forming a material over a substrate and patterning the material to remove portions of the material and expose an underlying portion of the substrate. The method further includes performing an oxidation process to form an oxide layer over the exposed portion of the substrate and at an interface between the material and the substrate. A circuit comprises a non-critical device and an oxide formed as part of this non-critical device. A high-K dielectric material is formed over a substrate as part of the critical device within the circuit. An oxide based interface is provided between the high-K dielectric material and an underlying substrate. A second method forms a nitride or oxynitride as the first material.

摘要翻译： 一种方法包括在衬底上形成材料并图案化材料以去除材料的部分并暴露衬底的下面部分。 该方法还包括进行氧化处理以在衬底的暴露部分和材料与衬底之间的界面处形成氧化物层。 电路包括非关键器件和形成为该非关键器件的一部分的氧化物。 高K电介质材料形成在衬底上，作为电路内关键器件的一部分。 在高K电介质材料和下层衬底之间提供氧化物基界面。 第二种方法形成氮化物或氧氮化物作为第一种材料。

公开(公告)号：US08816473B2

公开(公告)日：2014-08-26

申请号：US13440172

申请日：2012-04-05

申请人： Arvind Kumar ,  Anthony I-Chih Chou ,  Renee T. Mo ,  Shreesh Narasimha

发明人： Arvind Kumar ,  Anthony I-Chih Chou ,  Renee T. Mo ,  Shreesh Narasimha

IPC分类号： H01L29/86 ,  H01L21/02

CPC分类号： H01L23/5256 ,  H01L21/84 ,  H01L28/20 ,  H01L29/86 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure providing a precision resistive element and method of fabrication is disclosed. Polysilicon is embedded in a silicon substrate. The polysilicon may be doped to control the resistance. Embodiments may include resistors, eFuses, and silicon-on-insulator structures. Some embodiments may include non-rectangular cross sections.

摘要翻译： 公开了提供精密电阻元件的半导体结构和制造方法。 多晶硅嵌入在硅衬底中。 可以掺杂多晶硅以控制电阻。 实施例可以包括电阻器，eFuse和绝缘体上硅结构。 一些实施例可以包括非矩形横截面。

公开(公告)号：US08232599B2

公开(公告)日：2012-07-31

申请号：US12683456

申请日：2010-01-07

申请人： Anthony I. Chou ,  Arvind Kumar ,  Shreesh Narasimha ,  Ning Su ,  Huiling Shang

发明人： Anthony I. Chou ,  Arvind Kumar ,  Shreesh Narasimha ,  Ning Su ,  Huiling Shang

IPC分类号： H01L27/12 ,  H01L21/86

CPC分类号： H01L27/1207 ,  H01L21/84

摘要： An integrated circuit is provided that integrates an bulk FET and an SOI FET on the same chip, where the bulk FET includes a gate conductor over a gate oxide formed over a bulk substrate, where the gate dielectric of the bulk FET has the same thickness and is substantially coplanar with the buried insulating layer of the SOI FET. In a preferred embodiment, the bulk FET is formed from an SOI wafer by forming bulk contact trenches through the SOI layer and the buried insulating layer of the SOI wafer adjacent an active region of the SOI layer in a designated bulk device region. The active region of the SOI layer adjacent the bulk contact trenches forms the gate conductor of the bulk FET which overlies a portion of the underlying buried insulating layer, which forms the gate dielectric of the bulk FET.

摘要翻译： 提供了一种集成电路，其将同一芯片上的体FET和SOI FET集成在一起，其中，本体FET包括在大块衬底上形成的栅极氧化物上的栅极导体，其中本体FET的栅极电介质具有相同的厚度， 与SOI FET的掩埋绝缘层基本共面。 在优选实施例中，通过在指定的大容量器件区域中与SOI层的有源区相邻的SOI层和SOI晶片的掩埋绝缘层形成体接触沟槽，从SOI晶片形成本体FET。 邻近体接触沟槽的SOI层的有源区域形成体FET的栅极导体，其覆盖形成本体FET的栅极电介质的下层掩埋绝缘层的一部分。

公开(公告)号：US20120187492A1

公开(公告)日：2012-07-26

申请号：US13425681

申请日：2012-03-21

申请人： Anthony I. Chou ,  Arvind Kumar ,  Shreesh Narasimha ,  Ning Su ,  Huiling Shang

发明人： Anthony I. Chou ,  Arvind Kumar ,  Shreesh Narasimha ,  Ning Su ,  Huiling Shang

IPC分类号： H01L27/088

CPC分类号： H01L27/1207 ,  H01L21/84

摘要： An integrated circuit is provided that integrates an bulk FET and an SOI FET on the same chip, where the bulk FET includes a gate conductor over a gate oxide formed over a bulk substrate, where the gate dielectric of the bulk FET has the same thickness and is substantially coplanar with the buried insulating layer of the SOI FET. In a preferred embodiment, the bulk FET is formed from an SOI wafer by forming bulk contact trenches through the SOI layer and the buried insulating layer of the SOI wafer adjacent an active region of the SOI layer in a designated bulk device region. The active region of the SOI layer adjacent the bulk contact trenches forms the gate conductor of the bulk FET which overlies a portion of the underlying buried insulating layer, which forms the gate dielectric of the bulk FET.

摘要翻译： 提供了一种集成电路，其将同一芯片上的体FET和SOI FET集成在一起，其中，本体FET包括在大块衬底上形成的栅极氧化物上的栅极导体，其中本体FET的栅极电介质具有相同的厚度， 与SOI FET的掩埋绝缘层基本共面。 在优选实施例中，通过在指定的大容量器件区域中与SOI层的有源区相邻的SOI层和SOI晶片的掩埋绝缘层形成体接触沟槽，从SOI晶片形成本体FET。 邻近体接触沟槽的SOI层的有源区域形成体FET的栅极导体，其覆盖形成本体FET的栅极电介质的下层掩埋绝缘层的一部分。

公开(公告)号：US08779551B2

公开(公告)日：2014-07-15

申请号：US13489537

申请日：2012-06-06

申请人： Anthony I. Chou ,  Arvind Kumar ,  Edward P. Maciejewski ,  Shreesh Narasimha ,  Dustin K. Slisher

发明人： Anthony I. Chou ,  Arvind Kumar ,  Edward P. Maciejewski ,  Shreesh Narasimha ,  Dustin K. Slisher

IPC分类号： H01L27/06

CPC分类号： H01L21/8238 ,  H01L21/265 ,  H01L21/77 ,  H01L21/823835 ,  H01L27/0629 ,  H01L27/1203 ,  H01L29/42364 ,  H01L29/7391 ,  H01L29/861

摘要： A semiconductor structure provided with a plurality of gated-diodes having a silicided anode (p-doped region) and cathode (n-doped region) and a high-K gate stack made of non-silicided gate material, the gated-diodes being adjacent to FETs, each of which having a silicided source, a silicided drain and a silicided HiK gate stack. The semiconductor structure eliminates a cap removal RIE in a gate first High-K metal gate flow from the region of the gated-diode. The lack of silicide and the presence of a nitride barrier on the gate of the diode are preferably made during the gate first process flow. The absence of the cap removal RIE is beneficial in that diffusions of the diode are not subjected to the cap removal RIE, which avoids damage and allows retaining its highly ideal junction characteristics.

摘要翻译： 一种半导体结构，其具有多个具有硅化阳极（p掺杂区域）和阴极（n掺杂区域）的门控二极管和由非硅化栅极材料制成的高K栅极堆叠，该门控二极管相邻 其中每一个具有硅化源，硅化物漏极和硅化HiK栅极叠层。 半导体结构消除了栅极第一高K金属栅极流从栅极二极管的区域流出的帽去除RIE。 优选在栅极第一工艺流程期间，在二极管的栅极上缺少硅化物和存在氮化物阻挡层。 没有帽去除RIE是有益的，因为二极管的扩散不经受帽去除RIE，这避免了损伤并且允许保持其高度理想的结特性。

公开(公告)号：US07956415B2

公开(公告)日：2011-06-07

申请号：US12133686

申请日：2008-06-05

申请人： Anthony I. Chou ,  Andres Bryant ,  Arvind Kumar ,  Shreesh Narasimha

发明人： Anthony I. Chou ,  Andres Bryant ,  Arvind Kumar ,  Shreesh Narasimha

IPC分类号： H01L27/12

CPC分类号： H01L29/66772 ,  H01L29/78603 ,  H01L29/78612

摘要： A top semiconductor layer is formed with two different thicknesses such that a step is formed underneath a body region of a semiconductor-on-insulator (SOI) field effect transistor at the interface between a top semiconductor layer and an underlying buried insulator layer. The interface and the accompanying interfacial defects in the body region provide recombination centers, which increase the recombination rate between the holes and electrons in the body region. Optionally, a spacer portion, comprising a material that functions as recombination centers, is formed on sidewalls of the step to provide an enhanced recombination rate between holes and electrons in the body region, which increases the bipolar breakdown voltage of a SOI field effect transistor.

摘要翻译： 顶部半导体层形成有两个不同的厚度，使得在顶部半导体层和下面的掩埋绝缘体层之间的界面处在绝缘体上半导体（SOI）场效应晶体管的体区之下形成台阶。 身体区域中的界面和伴随的界面缺陷提供了复合中心，这增加了身体区域中的空穴和电子之间的复合速率。 任选地，包括作为复合中心的材料的间隔物部分形成在台阶的侧壁上，以在体区中的空穴和电子之间提供增强的复合率，这增加了SOI场效应晶体管的双极击穿电压。

公开(公告)号：US20130328124A1

公开(公告)日：2013-12-12

申请号：US13489537

申请日：2012-06-06

申请人： Anthony I. Chou ,  Arvind Kumar ,  Edward P. Maciejewski ,  Shreesh Narasimha ,  Dustin K. Slisher

发明人： Anthony I. Chou ,  Arvind Kumar ,  Edward P. Maciejewski ,  Shreesh Narasimha ,  Dustin K. Slisher

IPC分类号： H01L27/06 ,  H01L21/8238

CPC分类号： H01L21/8238 ,  H01L21/265 ,  H01L21/77 ,  H01L21/823835 ,  H01L27/0629 ,  H01L27/1203 ,  H01L29/42364 ,  H01L29/7391 ,  H01L29/861

摘要： A semiconductor structure provided with a plurality of gated-diodes having a silicided anode (p-doped region) and cathode (n-doped region) and a high-K gate stack made of non-silicided gate material, the gated-diodes being adjacent to FETs, each of which having a silicided source, a silicided drain and a silicided HiK gate stack. The semiconductor structure eliminates a cap removal RIE in a gate first High-K metal gate flow from the region of the gated-diode. The lack of silicide and the presence of a nitride barrier on the gate of the diode are preferably made during the gate first process flow. The absence of the cap removal RIE is beneficial in that diffusions of the diode are not subjected to the cap removal RIE, which avoids damage and allows retaining its highly ideal junction characteristics.

摘要翻译： 一种半导体结构，其具有多个具有硅化阳极（p掺杂区域）和阴极（n掺杂区域）的门控二极管和由非硅化栅极材料制成的高K栅极堆叠，该门控二极管相邻 其中每一个具有硅化源，硅化物漏极和硅化HiK栅极叠层。 半导体结构消除了栅极第一高K金属栅极流从栅极二极管的区域流出的帽去除RIE。 优选在栅极第一工艺流程期间，在二极管的栅极上缺少硅化物和存在氮化物阻挡层。 没有帽去除RIE是有益的，因为二极管的扩散不经受帽去除RIE，这避免了损伤并且允许保持其高度理想的结特性。