公开(公告)号：US07067440B1

公开(公告)日：2006-06-27

申请号：US10890655

申请日：2004-07-13

申请人： Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasouliotis ,  Vikram Singh

发明人： Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasouliotis ,  Vikram Singh

IPC分类号： H01L21/00

CPC分类号： C23C16/401 ,  C23C16/045

摘要： Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

公开(公告)号：US06787483B1

公开(公告)日：2004-09-07

申请号：US10442846

申请日：2003-05-20

申请人： Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasoulitotis ,  Vikram Singh

发明人： Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasoulitotis ,  Vikram Singh

IPC分类号： H01L2131

CPC分类号： H01L21/02129 ,  C23C16/045 ,  C23C16/402 ,  H01J2237/3327 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76224

摘要： Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

摘要翻译： 使用化学气相沉积方法来填充高纵横比（通常至少3:1），窄宽度（通常为1.5微米或更小甚至0.15微米以下）间隙，空隙或弱点的发生率显着降低。 该沉积工艺涉及在含等离子体CVD反应器的反应混合物中使用氢作为工艺气体。 工艺气体还包括电介质形成前体分子，例如硅和含氧分子。

公开(公告)号：US06596654B1

公开(公告)日：2003-07-22

申请号：US09996619

申请日：2001-11-28

申请人： Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasoulitotis ,  Vikram Singh

发明人： Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasoulitotis ,  Vikram Singh

IPC分类号： H01L2131

CPC分类号： H01L21/02129 ,  C23C16/045 ,  C23C16/402 ,  H01J2237/3327 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76224

摘要： Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

摘要翻译： 使用化学气相沉积方法来填充高纵横比（通常至少3:1），窄宽度（通常为1.5微米或更小甚至0.15微米以下）间隙，空隙或弱点的发生率显着降低。 该沉积工艺涉及在含等离子体CVD反应器的反应混合物中使用氢作为工艺气体。 工艺气体还包括电介质形成前体分子，例如硅和含氧分子。

公开(公告)号：US07122485B1

公开(公告)日：2006-10-17

申请号：US10316987

申请日：2002-12-09

申请人： George D. Papasouliotis ,  Edith Goldner ,  Vishal Gauri ,  Md Sazzadur Rahman ,  Vikram Singh

发明人： George D. Papasouliotis ,  Edith Goldner ,  Vishal Gauri ,  Md Sazzadur Rahman ,  Vikram Singh

IPC分类号： H01L21/31

CPC分类号： C23C16/401 ,  C23C16/45523 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612

摘要： Disclosed are methods for modifying the topography of HDP CVD films by modifying the composition of the reactive mixture. The methods allow for deposition profile control independent of film deposition rate. They rely on changes in the process chemistry of the HDP CVD system, rather than hardware modifications, to modify the local deposition rates on the wafer. The invention provides methods of modifying the film profile by altering the composition of the reactive gas mixture, in particular the hydrogen content. In this manner, deposition profile and wiw uniformity are decoupled from deposition rate, and can be controlled without hardware modifications.

摘要翻译： 公开了通过改变反应性混合物的组成来改变HDP CVD膜的形貌的方法。 该方法允许独立于膜沉积速率的沉积轮廓控制。 它们依赖于HDP CVD系统的工艺化学变化，而不是硬件修改，以修改晶片上的局部沉积速率。 本发明提供了通过改变反应气体混合物的组成，特别是氢含量来改变膜分布的方法。 以这种方式，沉积轮廓和均匀性与沉积速率分离，并且可以在没有硬件修改的情况下被控制。

公开(公告)号：US07001854B1

公开(公告)日：2006-02-21

申请号：US10271333

申请日：2002-10-11

申请人： George D. Papasouliotis ,  Md Sazzadur Rahman ,  Pin Sheng Sun ,  Karen Prichard ,  Lauren Hall ,  Vikram Singh

发明人： George D. Papasouliotis ,  Md Sazzadur Rahman ,  Pin Sheng Sun ,  Karen Prichard ,  Lauren Hall ,  Vikram Singh

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/311

CPC分类号： H01L21/02164 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76224

摘要： Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.13 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen and a phosphorus dopant precursor as process gasses in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

摘要翻译： 采用化学气相沉积工艺来填补高纵横比（通常至少3:1），窄宽度（通常为1.5微米或更小，甚至0.13微米以下）间隙，空隙或弱点的发生率显着降低。 该沉积工艺涉及使用氢和磷掺杂剂前体作为含等离子体CVD反应器的反应混合物中的工艺气体。 工艺气体还包括电介质形成前体分子，例如硅和含氧分子。