公开(公告)号：US08110497B2

公开(公告)日：2012-02-07

申请号：US12646598

申请日：2009-12-23

申请人： Atsuko Sakata ,  Soichi Yamashita ,  Yasuyuki Sonoda ,  Hiroshi Toyoda ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Soichi Yamashita ,  Yasuyuki Sonoda ,  Hiroshi Toyoda ,  Masahiko Hasunuma

IPC分类号： H01L21/4763

CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76807 ,  H01L21/76835 ,  H01L21/76864 ,  H01L21/76877

摘要： An embodiment of the present invention provides a method for manufacturing a semiconductor device. This method comprises: forming a seed film at least on an inner face of a recessed portion of a substrate; forming a protection film on the seed film, the protection film being made of a material that is more easily oxidized than a material forming the seed film; heat-treating the protection film; exposing at least part of the seed film by removing at least part of the heat-treated protection film; forming a plating film on the seed film through electrolytic plating to be buried in the recessed portion, by supplying current to the seed film that is at least partially exposed; and removing the plating film except for a portion buried in the recessed portion.

摘要翻译： 本发明的实施例提供一种用于制造半导体器件的方法。 该方法包括：至少在基板的凹部的内表面上形成种子膜; 在种子膜上形成保护膜，保护膜由比形成种子膜的材料更容易氧化的材料制成; 热处理保护膜; 通过除去至少部分经热处理的保护膜来暴露至少部分种子膜; 通过电解电镀在所述种子膜上形成电镀膜，以通过向至少部分暴露的种子膜供电; 除去除了隐藏在凹部中的部分之外的电镀膜。

公开(公告)号：US20100167529A1

公开(公告)日：2010-07-01

申请号：US12646598

申请日：2009-12-23

申请人： Atsuko SAKATA ,  Soichi Yamashita ,  Yasuyuki Sonoda ,  Hiroshi Toyoda ,  Masahiko Hasunuma

发明人： Atsuko SAKATA ,  Soichi Yamashita ,  Yasuyuki Sonoda ,  Hiroshi Toyoda ,  Masahiko Hasunuma

IPC分类号： H01L21/768

CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76807 ,  H01L21/76835 ,  H01L21/76864 ,  H01L21/76877

摘要： An embodiment of the present invention provides a method for manufacturing a semiconductor device. This method comprises: forming a seed film at least on an inner face of a recessed portion of a substrate; forming a protection film on the seed film, the protection film being made of a material that is more easily oxidized than a material forming the seed film; heat-treating the protection film; exposing at least part of the seed film by removing at least part of the heat-treated protection film; forming a plating film on the seed film through electrolytic plating to be buried in the recessed portion, by supplying current to the seed film that is at least partially exposed; and removing the plating film except for a portion buried in the recessed portion.

摘要翻译： 本发明的实施例提供一种用于制造半导体器件的方法。 该方法包括：至少在基板的凹部的内表面上形成种子膜; 在种子膜上形成保护膜，保护膜由比形成种子膜的材料更容易氧化的材料制成; 热处理保护膜; 通过除去至少部分经热处理的保护膜来暴露至少部分种子膜; 通过电解电镀在所述种子膜上形成电镀膜，以通过向至少部分暴露的种子膜供电; 除去除了隐藏在凹部中的部分之外的电镀膜。

公开(公告)号：US07351656B2

公开(公告)日：2008-04-01

申请号：US11335584

申请日：2006-01-20

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L21/44

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

公开(公告)号：US07994054B2

公开(公告)日：2011-08-09

申请号：US11896271

申请日：2007-08-30

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L21/44

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热至第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，形成第一金属膜 在低于第一衬底温度的第二衬底温度下在绝缘膜上，用保留在绝缘膜中的氧化物质氧化至少部分第一金属膜，并形成第二金属膜，其包括高熔点金属 和第一金属膜上的贵金属，第一金属膜和第二金属膜共享不同的金属材料。

公开(公告)号：US20080261398A1

公开(公告)日：2008-10-23

申请号：US12010372

申请日：2008-01-24

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L21/44

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

公开(公告)号：US20080090410A1

公开(公告)日：2008-04-17

申请号：US11896271

申请日：2007-08-30

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L21/4763

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热至第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，形成第一金属膜 在低于第一衬底温度的第二衬底温度下在绝缘膜上，用保留在绝缘膜中的氧化物质氧化至少部分第一金属膜，并形成第二金属膜，其包括高熔点金属 和第一金属膜上的贵金属，第一金属膜和第二金属膜共享不同的金属材料。

公开(公告)号：US20120152168A1

公开(公告)日：2012-06-21

申请号：US13407802

申请日：2012-02-29

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： C23C16/46 ,  C23C16/511

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到​​第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在 所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

公开(公告)号：US07791202B2

公开(公告)日：2010-09-07

申请号：US12010371

申请日：2008-01-24

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到​​第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在 所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

公开(公告)号：US20080122102A1

公开(公告)日：2008-05-29

申请号：US12010371

申请日：2008-01-24

申请人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Atsuko Sakata ,  Junichi Wada ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L23/48

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到​​第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在 所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

公开(公告)号：US08148274B2

公开(公告)日：2012-04-03

申请号：US12010372

申请日：2008-01-24

申请人： Junichi Wada ,  Atsuko Sakata ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

发明人： Junichi Wada ,  Atsuko Sakata ,  Seiichi Omoto ,  Masaaki Hatano ,  Soichi Yamashita ,  Kazuyuki Higashi ,  Naofumi Nakamura ,  Masaki Yamada ,  Kazuya Kinoshita ,  Tomio Katata ,  Masahiko Hasunuma

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31616 ,  C23C16/045 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

摘要翻译： 一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到​​第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在 所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。