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1.发明授权Plasma chemical vapor deposition device capable of suppressing generation of polysilane powder 失效能够抑制聚硅烷粉末产生的等离子体化学气相沉积装置
公开(公告)号：US5487786A
公开(公告)日：1996-01-30
申请号：US363226
申请日：1994-12-22
IPC分类号： H01L21/205 , C23C16/44 , C23C16/509 , H01L31/04 , C23C16/00
CPC分类号： C23C16/4401 , C23C16/5096 , H01J37/32724
摘要： There is provided a plasma CVD device which can deposit a high-quality a-Si:H or other film at a high rate, and which can improve production efficiency thereof remarkably. The CVD device has a substrate holding electrode and a high frequency application electrode arranged opposite to and parallel to a substrate held by the substrate holding electrode. A material gas introduced between the substrate holding electrode and the high frequency application electrode is decomposed by glow discharge, so that a thin film is deposited on the heated substrate. A first electrode heater for heating a peripheral portion of the high frequency application electrode is installed along the peripheral portion of the high frequency application electrode. A second electrode heater for heating the peripheral portion of the high frequency application electrode and a surface of the high frequency application electrode opposite to its surface facing the substrate is composed of a bottom portion and a side portion provided uprightly along a peripheral edge of the bottom portion and formed in a concave shape to surround the high frequency application electrode with a spacing therebetween.
摘要翻译： 提供了能够以高速率沉积高质量的a-Si：H或其它膜的等离子体CVD装置，并且可以显着提高其生产效率。 CVD装置具有基板保持电极和与由基板保持电极保持的基板相对并平行的高频施加电极。 在基板保持电极和高频施加电极之间引入的原料气体通过辉光放电分解，使得在被加热的基板上沉积薄膜。 用于加热高频施加电极的周边部分的第一电极加热器沿着高频施加电极的周边部分安装。 用于加热高频施加电极的周边部分的第二电极加热器和与其面向基板的表面相对的高频施加电极的表面由底部和沿着底部的周边垂直设置的侧部分组成 并且形成为凹形，以围绕高频施加电极间隔开。
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公开(公告)号：US06894880B2
公开(公告)日：2005-05-17
申请号：US09918433
申请日：2001-08-01
申请人： Atsushi Chida
发明人： Atsushi Chida
CPC分类号： H01S5/06825 , H01S5/042
摘要： A resistor is connected in series with a semiconductor laser device, while, on both sides of this resistor, a first capacitor and a second capacitor are connected in parallel with the semiconductor laser device so as to be arranged in π-type configuration, thereby achieving a high electrostatic breakdown voltage.
摘要翻译： 电阻器与半导体激光器件串联连接，而在该电阻器的两侧，第一电容器和第二电容器与半导体激光器件并联连接，以便以pi型配置，从而实现 高静电击穿电压。
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公开(公告)号：US06954475B2
公开(公告)日：2005-10-11
申请号：US10215184
申请日：2002-08-09
申请人： Atsushi Chida
发明人： Atsushi Chida
CPC分类号： H01S5/02212 , H01L2224/48091 , H01S5/02292 , H01S5/02469 , H01L2924/00014
摘要： There is provided a semiconductor laser device capable of maintaining a good luminous characteristic under severe environment. A cap 4 in an approximate portal shape having lateral apertures 41 is attached to a stem 1 on which a laser diode 2 and a light receiving element 3 are mounted. A holographic element 5 is mounted on a window 43 of the cap 4. Air inside the cap 4 is exchanged with outside air through the lateral apertures 41 to effectively cool the laser diode 2, thus enabling the semiconductor laser device to maintain a good luminous characteristic under high-temperature severe environment.
摘要翻译： 提供了能够在恶劣环境下保持良好的发光特性的半导体激光装置。 具有侧孔41的近似入口形状的盖4附接到其上安装有激光二极管2和光接收元件3的杆1。 全息元件5安装在盖4的窗口43上。 盖4内的空气通过侧孔41与外部空气交换，以有效地冷却激光二极管2，从而使得半导体激光装置能够在高温恶劣环境下保持良好的发光特性。
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公开(公告)号：US07406019B2
公开(公告)日：2008-07-29
申请号：US11044707
申请日：2005-01-28
申请人： Atsushi Chida
发明人： Atsushi Chida
IPC分类号： G11B7/00
摘要： A semiconductor laser apparatus is provided which comprises a semiconductor laser device for emitting laser light and a base having a major surface and a circumferential side surface. The circumferential side surface has an upper surface and a lower surface. The semiconductor laser device is mounted on the major surface of the base. At least one of the upper and lower surfaces of the circumferential side surface is tilted from a direction perpendicular to the major surface so that a height in a vertical direction of the semiconductor laser apparatus is reduced or minimized.
摘要翻译： 提供一种半导体激光装置，其包括用于发射激光的半导体激光装置和具有主表面和周向侧表面的基座。 圆周侧表面具有上表面和下表面。 半导体激光装置安装在基座的主表面上。 圆周侧表面的上表面和下表面中的至少一个从垂直于主表面的方向倾斜，使得半导体激光装置的垂直方向的高度减小或最小化。
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公开(公告)号：US20050207317A1
公开(公告)日：2005-09-22
申请号：US11044707
申请日：2005-01-28
申请人： Atsushi Chida
发明人： Atsushi Chida
摘要： A semiconductor laser apparatus is provided which comprises a semiconductor laser device for emitting laser light and a base having a major surface and a circumferential side surface. The circumferential side surface has an upper surface and a lower surface. The semiconductor laser device is mounted on the major surface of the base. At least one of the upper and lower surfaces of the circumferential side surface is tilted from a direction perpendicular to the major surface so that a height in a vertical direction of the semiconductor laser apparatus is reduced or minimized.
摘要翻译： 提供一种半导体激光装置，其包括用于发射激光的半导体激光装置和具有主表面和周向侧表面的基座。 圆周侧表面具有上表面和下表面。 半导体激光装置安装在基座的主表面上。 圆周侧表面的上表面和下表面中的至少一个从垂直于主表面的方向倾斜，使得半导体激光装置的垂直方向的高度减小或最小化。
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