摘要:
Source and drain regions of a second conductivity type are formed in a stripe form in the surface area of a semiconductor substrate of a first conductivity type. A first insulation film is formed on the source and drain regions of the substrate. A second thin insulation film having a tunnel effect is formed on that part of the substrate which lies between the source and drain regions. A floating gate is formed on the second insulation film. A third insulation film is formed on the first insulation film, the floating gate and that part of the substrate which lies between the source and drain regions and on which the second insulation film is not formed. A control gate is formed on the third insulation film in a stripe form extending in a direction which intersects the source and drain regions. An impurity region of the first conductivity type having an impurity concentration higher than the substrate is formed in the substrate except the source and drain regions and the portions lying below the control gate. A floating gate transistor is constituted to include the substrate, source and drain regions, second insulation film, floating gate, third insulation film and control gate. An offset transistor is constituted to include the substrate, source and drain regions, third insulation film and control gate. The first insulation film and the impurity region are used as an element isolation region of a memory cell.
摘要:
A nonvolatile semiconductor memory includes a cell array in which electrically erasable programmable nonvolatile semiconductor memory cells, each using a cell transistor having source and drain regions in a semiconductor substrate, and a gate electrode with a three-layered structure on the semiconductor substrate are arranged in a matrix form. In the gate electrode having the three-layered structure, a first-layer floating gate electrode opposes a semiconductor substrate surface through a first gate insulating film, and a second- or third-layer gate electrode serves as one of erase and control gate electrodes. The erase gate electrode opposes a part of the floating gate electrode through a tunnel insulating film, and the control gate electrode opposes the floating gate electrode through a second gate insulating film. The erase and control gate electrodes are arranged to be parallel to each other, and to be perpendicular to the source and drain regions. Of two cell transistors adjacent to each other in a length direction of the channel region, the source region of one cell transistor is common to the drain region of the other cell transistor, and the cell transistors adjacent to each other in the widthwise direction of the channel region are element-isolated by an element isolation region formed in the semiconductor substrate between the channel regions.
摘要:
Source and drain regions of a second conductivity type are formed in a stripe form in the surface area of a semiconductor substrate of a first conductivity type. A first insulation film is formed on the source and drain regions of the substrate. A second thin insulation film having a tunnel effect is formed on that part of the substrate which lies between the source and drain regions. A floating gate is formed on the second insulation film. A third insulation film is formed on the first insulation film, the floating gate and that part of the substrate which lies between the source and drain regions and on which the second insulation film is not formed. A control gate is formed on the third insulation film in a stripe form extending in a direction which intersects the source and drain regions. An impurity region of the first conductivity type having an impurity concentration higher than the substrate is formed in the substrate except the source and drain regions and the portions lying below the control gate. A floating gate transistor is constituted to include the substrate, source and drain regions, second insulation film, floating gate, third insulation film and control gate. An offset transistor is constituted to include the substrate, source and drain regions, third insulation film and control gate. The first insulation film and the impurity region are used as an element isolation region of a memory cell.
摘要:
A coil component has a first core with a winding core portion, a second core with a winding core portion, a first coil wound on the winding core portion of the first core, and a second coil wound on the winding core portion of the second core. A part of the first coil is wound on the winding core portion of the second core. The first core and the second core are arranged as magnetically separated from each other.
摘要:
A coil component having a core including a winding portion, and first and second flanges disposed one on either end of the winding portion, A winding is wound about the winding portion, and first and second terminal electrodes are disposed on the first flange. The first flange has an octagonal shape including a bottom surface, a first peripheral surface, first and third omitted peripheral surfaces disposed one on either side of the first peripheral surface, a second peripheral surface opposing the first peripheral surface, and second and fourth omitted peripheral surfaces disposed one on either side of the second peripheral surface. The first terminal electrode is disposed across the first omitted peripheral surface, a part of the bottom surface in a region connecting the entire first omitted side to the entire third omitted side, and the third omitted peripheral surface. The second terminal electrode is disposed across the second omitted peripheral surface, a part of the bottom surface in a region connecting the entire second omitted side to the entire fourth omitted side, and the fourth omitted peripheral surface. The winding has a first end electrically connected to the first terminal electrode on the first omitted peripheral surface and a second end electrically connected to the second terminal electrode on the second omitted peripheral surface.
摘要:
To correct distortion in an optical system of an optical scanning, electrophotographic image generating apparatus, a parallel line group 107′ is printed by a printing apparatus to be calibrated on a sheet on which a correction pattern 101 has been printed. The user reads marker positions to find amounts of deviation of the adjustment pattern from the correction pattern and inputs the amounts of deviation in the printing apparatus. The printing apparatus interpolates values between the input amounts of deviation, establishes positions at which a line in the adjustment pattern deviate one pixel in a sub-scanning direction as scan line changing points and generate new conversion information by pairing the scan line changing points with respective directions of deviation. During image generation, the printing apparatus prints an image by correcting image data according to the conversion information.
摘要:
An outputting apparatus comprises: a discriminating circuit to discriminate whether the same pattern as the pattern to be developed at a predetermined position has already been developed in an outputting memory or not; a copying device to copy the same pattern to the predetermined position when the same pattern which has already been developed exists; a memory to store code information, decoration information, and developing position information of the pattern developed in the outputting memory; a cache memory to store patterns whose use frequencies are high; and a deciding circuit to decide whether the pattern in the outputting memory doesn't overlap another pattern or not. A process to develop a character symbol pattern into the outputting memory can be efficiently executed.
摘要:
An image forming apparatus includes an area modulation means for forming a halftone image signal by area modulation according to input image data, and a recording unit for performing recording using a particle-type recording material according to the halftone image signal, wherein the length of a short side of a minimum modulation area of the area modulation means formed by the recording unit is set to 0.7-4 times an average particle size of the particle-type recording material.
摘要:
A gate electrode 14 of a thin film transistor 100 included in a semiconductor device of the present invention is constituted of a single conductive film. A semiconductor layer 10 includes a first lightly doped impurity region which is provided between the channel region 12 and the source region 15 and which has a lower impurity concentration than those of the source and drain regions 15, and a second lightly doped impurity region which is provided between the channel region 12 and the drain region 15 and which has a lower impurity concentration than those of the source and drain regions 15. The entirety of one of the first and second lightly doped impurity regions (region 16a) extends under the gate electrode, and the other of the first and second lightly doped impurity regions (region 16b) does not extend under the gate electrode.
摘要:
An electrophotographic image forming apparatus performs latent image rendering using a plurality of light sources. The electrophotographic image forming apparatus includes a rendering time control unit that controls a latent image rendering start time for each of the light sources, a scanning time control unit that controls a scanning start time for each of the light sources, a pattern forming unit that forms a pixel pattern corresponding to pixel pattern data defined in advance on a photosensitive member, and a density detection unit that detects a density of the pixel pattern formed on the photosensitive member. The rendering time control unit and the scanning time control unit respectively control the rendering start time and the scanning start time for each of the light sources using a density value detected by the density detection unit.