Display device
    1.
    发明授权

    公开(公告)号:US11996503B2

    公开(公告)日:2024-05-28

    申请号:US17510393

    申请日:2021-10-26

    CPC classification number: H01L33/54 H01L27/156 H01L33/10 H01L33/62

    Abstract: A display device includes a first substrate, a first circuit structure, and light-emitting element package structures. The first circuit structure is located above the first substrate, and the first circuit structure has holes. Light-emitting element package structures are located above the first circuit structure. Each light-emitting element package structure includes a second substrate and at least one light-emitting element. The light emitting element is located between the second substrate and the first substrate, emitting toward the first circuit substrate, and overlapping with corresponding hole of the first circuit structure. The width of the corresponding hole near the first substrate is greater than the width of the corresponding hole near the second substrate.

    Pixel structure and fabrication method thereof

    公开(公告)号:US10256258B2

    公开(公告)日:2019-04-09

    申请号:US15890665

    申请日:2018-02-07

    Inventor: Chi-Ho Chang

    Abstract: A pixel structure and a fabrication method thereof are provided, and the fabrication method includes steps as follows. A gate and a scan line connected to the gate electrode are formed on a substrate. An insulation layer is formed on the substrate and is patterned to form an opening corresponding to the gate electrode. A gate insulation layer is formed to cover the gate electrode and the scan line. A channel layer is formed on the gate insulation layer and is located in the opening. A first ohmic contact layer and a second ohmic contact layer are formed on the channel layer and are located in the opening. A source electrode, a drain electrode and a data line connected to the source electrode are formed on the first ohmic contact layer and the second ohmic contact layer. A first electrode is formed and is electrically connected to the drain electrode.

    Active device substrate and fabricating method thereof

    公开(公告)号:US10985190B2

    公开(公告)日:2021-04-20

    申请号:US16197382

    申请日:2018-11-21

    Inventor: Chi-Ho Chang

    Abstract: An active device substrate including a substrate and an active device is provided. The active device includes a protrusion, a gate disposed on the protrusion, a semiconductor layer, a gate insulation layer disposed between the gate and the semiconductor layer, a first electrode and a second electrode electrically connected to the semiconductor layer. The protrusion has a first upper surface, a second upper surface, an inner surface and an outer surface. The inner surface and the first upper surface define a concave portion. The inner surface, the second upper surface and the outer surface define a convex portion. The semiconductor layer is disposed on the first upper surface, the inner surface, the second upper surface and the outer surface. The first electrode is disposed on at least one portion of the outer surface. The second electrode is disposed in the concave portion of the protrusion.

    ACTIVE DEVICE SUBSTRATE AND FABRICATING METHOD THEREOF

    公开(公告)号:US20190157306A1

    公开(公告)日:2019-05-23

    申请号:US16197382

    申请日:2018-11-21

    Inventor: Chi-Ho Chang

    Abstract: An active device substrate including a substrate and an active device is provided. The active device includes a protrusion, a gate disposed on the protrusion, a semiconductor layer, a gate insulation layer disposed between the gate and the semiconductor layer, a first electrode and a second electrode electrically connected to the semiconductor layer. The protrusion has a first upper surface, a second upper surface, an inner surface and an outer surface. The inner surface and the first upper surface define a concave portion. The inner surface, the second upper surface and the outer surface define a convex portion. The semiconductor layer is disposed on the first upper surface, the inner surface, the second upper surface and the outer surface. The first electrode is disposed on at least one portion of the outer surface. The second electrode is disposed in the concave portion of the protrusion.

    DISPLAY DEVICE
    6.
    发明申请

    公开(公告)号:US20230005894A1

    公开(公告)日:2023-01-05

    申请号:US17511600

    申请日:2021-10-27

    Abstract: A display device includes a circuit board and a plurality of light-emitting units disposed on the circuit board. The circuit board includes a substrate and a plurality of signal lines disposed on the substrate. Each light-emitting unit includes a base board, at least one light-emitting element and a driving circuit layer. The light-emitting element is between the base board and the substrate. The driving circuit layer is between the light-emitting element and the base board, and electrically connected to the light-emitting element and the signal line.

    Display panel
    7.
    发明授权

    公开(公告)号:US11143920B2

    公开(公告)日:2021-10-12

    申请号:US16690033

    申请日:2019-11-20

    Abstract: A display panel including a first substrate, a second substrate, and a display medium layer, a pixel array structure, and a first spacer that are disposed between the first substrate and the second substrate is provided. The pixel array structure includes a first signal line, and has a first platform region located on the first signal line, a first display region and a first support region located between the first platform region and the first display region. A first platform top surface of the first platform region and the first substrate are spaced by a first distance. A support top surface of the first support region and the first substrate are spaced by a second distance. A display top surface of the first display region and the first substrate are spaced by a third distance. A terminal surface of the first spacer contacts the first platform top surface.

    2D/3D SWITCHABLE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    2D/3D SWITCHABLE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    2D / 3D可切换显示装置及其制造方法

    公开(公告)号:US20140375905A1

    公开(公告)日:2014-12-25

    申请号:US14083419

    申请日:2013-11-18

    Abstract: A 2D/3D switchable display device including a display panel and a switch unit is provided. The display panel includes a first substrate, a second substrate and a display unit located between the first and second substrates. The first substrate includes a first surface and a second surface opposite to the first surface, and the display unit is located above the first surface. The switch unit located on the second surface includes a third substrate, a first electrode layer, a second electrode layer and a switchable medium layer between the first and second electrode layers. The second electrode layer is located on the second surface, the first electrode layer is located on the third substrate, and the switchable medium layer and the third substrate are respectively located on two opposite surfaces of the first electrode layer. A manufacturing method of a 2D/3D switchable display device is also provided.

    Abstract translation: 提供了包括显示面板和开关单元的2D / 3D可切换显示装置。 显示面板包括第一基板,第二基板和位于第一和第二基板之间的显示单元。 第一基板包括第一表面和与第一表面相对的第二表面,并且显示单元位于第一表面之上。 位于第二表面上的开关单元包括在第一和第二电极层之间的第三基板,第一电极层,第二电极层和可切换介质层。 第二电极层位于第二表面上,第一电极层位于第三基板上,可切换介质层和第三基板分别位于第一电极层的两个相对表面上。 还提供了2D / 3D可切换显示装置的制造方法。

    Pixel structure and fabricating method thereof

    公开(公告)号:US10163937B2

    公开(公告)日:2018-12-25

    申请号:US15423587

    申请日:2017-02-03

    Inventor: Chi-Ho Chang

    Abstract: A pixel structure includes a scan line, a data line, a bump, an active device, and a pixel electrode electrically connected to the active device. The active device includes a gate, a semiconductor layer, a gate insulation layer between the gate and the semiconductor layer, a source, and a drain. The bump has a top surface and side surfaces in periphery of the top surface. The gate covers the bump and electrically connects the scan line. The semiconductor layer is on the top surface and the side surfaces. The source is on at least one of the side surfaces, in contact with the semiconductor layer, and electrically connected to the data line. The drain is on the top surface and in contact with the semiconductor layer, and the drain does not cover the semiconductor layer on a corner section of the bump between the top surface and the side surfaces.

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