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公开(公告)号：US20240268125A1
公开(公告)日：2024-08-08
申请号：US18106159
申请日：2023-02-06
Applicant: Avalanche Technology, Inc.
Inventor： Zhiqiang Wei , Zihui Wang , Ebrahim Abedifard , Yiming Huai
IPC: H10B61/00 , H01L23/528 , H10N50/10
CPC classification number: H10B61/22 , H01L23/5283 , H10N50/10
Abstract: The present invention is directed to a nonvolatile memory device including a plurality of first conductive lines extending along a first direction; first and second plurality of second conductive lines extending along a second direction; an array of active regions, each active region having an elongated shape directed along a third direction substantially bisecting an angle formed between the first and second directions and including first and second drains formed at opposite ends thereof; and an array of first memory elements and an array of second memory elements formed at different levels, each first memory element and each second memory element being electrically connected to a respective first drain and a respective second drain, respectively. The first and second plurality of second conductive lines are electrically connected to the array of first memory elements and the array of second memory elements along the second direction, respectively.
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公开(公告)号：US11848039B2
公开(公告)日：2023-12-19
申请号：US17227294
申请日：2021-04-10
Applicant: Avalanche Technology, Inc.
Inventor： Zhiqiang Wei , Kimihiro Satoh , Woojin Kim , Zihui Wang
CPC classification number: G11C11/161 , H10B61/10 , H10N50/10 , H10N50/80 , H10N50/85
Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.
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公开(公告)号：US11538857B2
公开(公告)日：2022-12-27
申请号：US16836922
申请日：2020-04-01
Applicant: Avalanche Technology, Inc.
Inventor： Zhiqiang Wei , Hongxin Yang
Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes bottom and top electrodes, first and third volatile switching layers interposed between the bottom and top electrodes, and a second volatile switching layer interposed between the first and third volatile switching layers. The bottom and top electrodes each independently include one of titanium nitride or iridium. The first and third volatile switching layers each include tantalum oxide and silver. The second volatile switching layer includes hafnium oxide and has a higher electrical resistance than the first and third volatile switching layers.
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公开(公告)号：US20220383920A9
公开(公告)日：2022-12-01
申请号：US17227294
申请日：2021-04-10
Applicant: Avalanche Technology, Inc.
Inventor： Zhiqiang Wei , Kimihiro Satoh , Woojin Kim , Zihui Wang
Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.
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Patent Agency Ranking
公开(公告)号：US20210312964A1
公开(公告)日：2021-10-07
申请号：US17227294
申请日：2021-04-10
Applicant: Avalanche Technology, Inc.
Inventor： Zhiqiang Wei , Kimihiro Satoh , Woojin Kim , Zihui Wang
Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer; a magnetic reference layer; and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes a bottom electrode; a top electrode; a load-resistance layer interposed between the bottom and top electrodes and comprising a first tantalum oxide; a first volatile switching layer interposed between the bottom and top electrodes and comprising a metal dopant and a second tantalum oxide that has a higher oxygen content than the first tantalum oxide; and a second volatile switching layer in contact with the first volatile switching layer and comprising a third tantalum oxide that has a higher oxygen content than the first tantalum oxide.
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公开(公告)号：US20240015986A1
公开(公告)日：2024-01-11
申请号：US17952821
申请日：2022-09-26
Applicant: Avalanche Technology, Inc.
Inventor： Zhiqiang Wei , Zihui Wang
CPC classification number: H01L27/224 , H01L43/12
Abstract: The present invention is directed to a memory cell including first and second unidirectional selectors coupled in parallel to a nonvolatile memory element. Each of the first and second unidirectional selectors includes first, second, and third electrode layers; a first insulator layer interposed between the first and second electrode layers; and a second insulator layer interposed between the second and third electrode layers. The first insulator layer of the first unidirectional selector includes therein a permanent conductive path and the second insulator layer of the first unidirectional selector is operable to form therein a volatile conductive path upon application of a potential across the first unidirectional selector. The second insulator layer of the second unidirectional selector includes therein another permanent conductive path and the first insulator layer of the second unidirectional selector is operable to form therein another volatile conductive path upon application of another potential across the second selector.
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公开(公告)号：US12284813B2
公开(公告)日：2025-04-22
申请号：US18106159
申请日：2023-02-06
Applicant: Avalanche Technology, Inc.
Inventor： Zhiqiang Wei , Zihui Wang , Ebrahim Abedifard , Yiming Huai
IPC: H10B61/00 , H01L23/528 , H10N50/10
Abstract: The present invention is directed to a nonvolatile memory device including a plurality of first conductive lines extending along a first direction; first and second plurality of second conductive lines extending along a second direction; an array of active regions, each active region having an elongated shape directed along a third direction substantially bisecting an angle formed between the first and second directions and including first and second drains formed at opposite ends thereof; and an array of first memory elements and an array of second memory elements formed at different levels, each first memory element and each second memory element being electrically connected to a respective first drain and a respective second drain, respectively. The first and second plurality of second conductive lines are electrically connected to the array of first memory elements and the array of second memory elements along the second direction, respectively.
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公开(公告)号：US20220352255A9
公开(公告)日：2022-11-03
申请号：US16836922
申请日：2020-04-01
Applicant: Avalanche Technology, Inc.
Inventor： Zhiqiang Wei , Hongxin Yang
Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes bottom and top electrodes, first and third volatile switching layers interposed between the bottom and top electrodes, and a second volatile switching layer interposed between the first and third volatile switching layers. The bottom and top electrodes each independently include one of titanium nitride or iridium. The first and third volatile switching layers each include tantalum oxide and silver. The second volatile switching layer includes hafnium oxide and has a higher electrical resistance than the first and third volatile switching layers.
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公开(公告)号：US20210313393A1
公开(公告)日：2021-10-07
申请号：US16836922
申请日：2020-04-01
Applicant: Avalanche Technology, Inc.
Inventor： Zhiqiang Wei
Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes bottom and top electrodes, first and third volatile switching layers interposed between the bottom and top electrodes, and a second volatile switching layer interposed between the first and third volatile switching layers. The bottom and top electrodes each independently include one of titanium nitride or iridium. The first and third volatile switching layers each include tantalum oxide and silver. The second volatile switching layer includes hafnium oxide and has a higher electrical resistance than the first and third volatile switching layers.
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