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公开(公告)号：US12133395B2
公开(公告)日：2024-10-29
申请号：US18241856
申请日：2023-09-02
发明人： Zihui Wang , Yiming Huai
摘要： The present invention is directed to a perpendicular magnetic structure including a seed layer structure that includes a first seed layer comprising a metal element and oxygen; a second seed layer formed on top of the first seed layer and comprising cobalt, iron, and boron; and a third seed layer formed on top of the second seed layer and comprising chromium. The metal element is one of titanium, tantalum, or magnesium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the seed layer structure and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal is one of nickel, platinum, palladium, or iridium.
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公开(公告)号：US20230413577A1
公开(公告)日：2023-12-21
申请号：US18241856
申请日：2023-09-02
发明人： Zihui Wang , Yiming Huai
摘要： The present invention is directed to a perpendicular magnetic structure including a seed layer structure that includes a first seed layer comprising a metal element and oxygen; a second seed layer formed on top of the first seed layer and comprising cobalt, iron, and boron; and a third seed layer formed on top of the second seed layer and comprising chromium. The metal element is one of titanium, tantalum, or magnesium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the seed layer structure and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal is one of nickel, platinum, palladium, or iridium.
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公开(公告)号：US10727400B2
公开(公告)日：2020-07-28
申请号：US16112323
申请日：2018-08-24
发明人： Zihui Wang , Yiming Huai , Huadong Gan , Yuchen Zhou
IPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , H01L43/02 , H01L43/10 , H01F10/32 , H01F41/30 , H01L27/22 , H01L29/66 , B82Y40/00
摘要： The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; a non-magnetic metal layer formed adjacent to the magnetic free layer structure; an oxide layer formed adjacent to the non-magnetic metal layer; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the non-magnetic metal layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.
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公开(公告)号：US10438997B2
公开(公告)日：2019-10-08
申请号：US16287987
申请日：2019-02-27
发明人： Zihui Wang , Yiming Huai
摘要： The present invention is directed to a magnetic structure including a first seed layer, which is made of a first transition metal, formed on top of a second seed layer comprising cobalt, iron, and boron; and a magnetic fixed layer structure formed on top of the first seed layer and having a first invariable magnetization direction substantially perpendicular to a layer plane thereof. The magnetic fixed layer structure includes layers of a first magnetic material interleaved with layers of a second transition metal. The first transition metal may be chromium or iridium. The second transition metal may be nickel, platinum, palladium, or iridium. The second seed layer which comprises cobalt, iron, and boron, may have a noncrystalline structure. Moreover, the second seed layer may be non-magnetic or superparamagnetic. The magnetic structure may further includes a third seed layer, which may comprise tantalum, formed adjacent to the second seed layer opposite the first seed layer.
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公开(公告)号：US10032979B2
公开(公告)日：2018-07-24
申请号：US15816160
申请日：2017-11-17
发明人： Huadong Gan , Yiming Huai , Yuchen Zhou , Zihui Wang , Bing K. Yen , Xiaojie Hao , Pengfa Xu
IPC分类号： H01L43/08 , H01F10/32 , G11C11/16 , H01F41/30 , H01L29/66 , H01L43/10 , H01L27/22 , H01L43/02 , B82Y40/00
摘要： The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction opposite to the first invariable magnetization direction.
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公开(公告)号：US20180075891A1
公开(公告)日：2018-03-15
申请号：US15264847
申请日：2016-09-14
发明人： Hongxin Yang , Xiaobin Wang , Jing Zhang , Xiaojie Hao , Zihui Wang , Kimihiro Satoh
CPC分类号： G11C11/1673 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/2463 , H01L43/02 , H01L43/12
摘要： The present invention is directed to a method for sensing the resistance state of a memory cell that includes an MTJ memory element coupled to a two-terminal selector element in series. The method includes the steps of raising a cell voltage across the memory cell above a threshold voltage for the selector element to become conductive; decreasing the cell voltage to a first sensing voltage and measuring a first sensing current passing through the memory cell, the selector element being nominally conductive irrespective of the resistance state of the MTJ memory element at the first sensing voltage; and further decreasing the cell voltage to a second sensing voltage and measuring a second sensing current, the selector element being nominally conductive if the MTJ memory element is in the low resistance state or nominally insulative if the MTJ memory element is in the high resistance state at the second sensing voltage.
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公开(公告)号：US20170236868A1
公开(公告)日：2017-08-17
申请号：US15586638
申请日：2017-05-04
发明人： Parviz Keshtbod , Xiaobin Wang , Kimihiro Satoh , Zihui Wang , Huadong Gan
CPC分类号： H01L27/228 , H01L43/08
摘要： The present invention is directed to a spin-orbitronics device including an array of MTJs with each of the MTJs coupled to a respective one of a plurality of selection transistors; a plurality of transverse polarizing lines with each of the transverse polarizing lines coupled to a row of the MTJs along a first direction; a plurality of word lines with each of the word lines coupled to gates of a row of the selection transistors along a second direction; and a plurality of source lines with each of the source lines coupled to a row of the selection transistors along a direction substantially perpendicular to the second direction. Each MTJ includes a magnetic comparison layer structure having a pseudo-invariable magnetization direction, which is configured to switch between two stable states by passing a comparison current through one of the plurality of transverse polarizing lines formed adjacent to the magnetic comparison layer structure.
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8.发明授权公开(公告)号：US09679625B2
公开(公告)日：2017-06-13
申请号：US14930523
申请日：2015-11-02
发明人： Jing Zhang , Yiming Huai , Rajiv Yadav Ranjan , Yuchen Zhou , Zihui Wang , Xiaojie Hao
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , H01L43/02 , H01L43/08 , H01L43/10
摘要： An STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer, causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.
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公开(公告)号：US20170162781A1
公开(公告)日：2017-06-08
申请号：US15440948
申请日：2017-02-23
发明人： Yuchen Zhou , Zihui Wang , Huadong Gan , Yiming Huai
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , H01F10/14 , H01F10/16 , H01F10/3222 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F41/302 , H01F41/307 , H01L27/222 , H01L27/228 , H01L29/66984 , H01L43/08 , H01L43/10
摘要： The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure that comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a first perpendicular enhancement layer (PEL) formed adjacent to the magnetic free layer structure; a magnetic dead layer formed adjacent to the first PEL; and a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a second PEL. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.
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公开(公告)号：US09647032B2
公开(公告)日：2017-05-09
申请号：US14831546
申请日：2015-08-20
发明人： Xiaobin Wang , Parviz Keshtbod , Kimihiro Satoh , Zihui Wang , Huadong Gan
CPC分类号： H01L27/228 , H01L43/08
摘要： The present invention is directed to a spin-orbitronics device including a magnetic comparison layer structure having a pseudo-invariable magnetization direction; a magnetic free layer structure whose variable magnetization direction can be switched by a switching current passing between the magnetic comparison layer structure and the magnetic free layer structure; an insulating tunnel junction layer interposed between the magnetic comparison layer structure and the magnetic free layer structure; and a non-magnetic transverse polarizing layer formed adjacent to the magnetic comparison layer structure. The pseudo-invariable magnetization direction of the magnetic comparison layer structure may be switched by passing a comparison current through the transverse polarizing layer along a direction that is substantially parallel to a layer plane of the transverse polarizing layer. The pseudo-invariable magnetization direction of the magnetic comparison layer structure is not switched by the switching current. The variable magnetization direction of the magnetic free layer structure is not switched by the comparison current.
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