公开(公告)号：US5907220A

公开(公告)日：1999-05-25

申请号：US615771

申请日：1996-03-13

申请人： Avi Tepman ,  James van Gogh

发明人： Avi Tepman ,  James van Gogh

IPC分类号： C23C14/35 ,  C23C14/56 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  C23C14/34

CPC分类号： H01J37/3494 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subseguent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.

摘要翻译： 一种用于控制用于在真空室中溅射靶的表面的磁控管的操作的方法，所述方法包括以下步骤：在溅射的低压阶段期间，使由磁控管源产生的磁场被限制 主要到目标表面的内部区域，以便在溅射过程中减少电子从目标的泄漏; 并且在溅射的次级高压阶段期间，使得由磁体组件产生的磁场延伸到目标表面的外部区域中，从而从靶的表面的外部区域溅射材料。 溅射的高压相的压力高于溅射的低压相的压力。

公开(公告)号：US06228235B1

公开(公告)日：2001-05-08

申请号：US09261002

申请日：1999-03-02

申请人： Avi Tepman ,  James van Gogh

发明人： Avi Tepman ,  James van Gogh

IPC分类号： C23C1435

CPC分类号： H01J37/3494 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subsequent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.

摘要翻译： 一种用于控制用于在真空室中溅射靶的表面的磁控管的操作的方法，所述方法包括以下步骤：在溅射的低压阶段期间，使由磁控管源产生的磁场被限制 主要到目标表面的内部区域，以便在溅射过程中减少电子从目标的泄漏; 并且在随后的溅射高压阶段期间，使得由磁体组件产生的磁场延伸到目标表面的外部区域中，从而从靶的表面的外部区域溅射材料。 溅射的高压相的压力高于溅射的低压相的压力。

公开(公告)号：US5922133A

公开(公告)日：1999-07-13

申请号：US928995

申请日：1997-09-12

申请人： Avi Tepman ,  James van Gogh

发明人： Avi Tepman ,  James van Gogh

IPC分类号： C23C16/04 ,  C23C16/458 ,  H01L21/687 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/68735 ,  C23C14/50 ,  C23C14/564 ,  H01L21/68721

摘要： An exclusion ring system for depositing a film with multiple exclusion zones on a substrate in a deposition apparatus having a pedestal for supporting the substrate at different positions. A first exclusion ring is positioned above the substrate and pedestal and extends over a first zone overlying the perimeter of the substrate up to a first inner periphery. A second ring is positioned between the first ring and the substrate and extends over a second zone overlying the perimeter of the substrate outwardly of the first zone to a second inner periphery lying outwardly of the first inner periphery. When the pedestal is in a raised position, it supports the rings. When the pedestal is in a lowered position, the rings are supported by legs resting on a stationary wall, the legs of the first ring being effectively longer than the legs of the second ring so that the rings are sequentially moved away from the substrate as the pedestal is lowered. Initially, the first ring is in a position proximate the substrate to prevent deposition of the first film over the first zone. Then the pedestal is lowered to a position where the first ring is moved away from the substrate by its leg being supported. This leaves the second ring as an effective exclusion ring at the second position so that the second film is deposited over the first and over the second zone and also extends outwardly to cover and protect the edge of the first film.

摘要翻译： 一种用于在具有用于在不同位置支撑衬底的基座的沉积设备中的衬底上沉积具有多个排除区域的膜的排除环系统。 第一排除环位于衬底和基座上方并且在覆盖衬底的周边的第一区域上延伸到第一内周边。 第二环定位在第一环和衬底之间并且在覆盖第一区域外部的衬底的周边上的第二区域上延伸到位于第一内周边外侧的第二内周边。 当基座处于升高位置时，它支撑环。 当基座处于降低位置时，环由搁置在固定壁上的腿支撑，第一环的腿比第二环的腿部有效地长，使得环从基底依次移动离开基底 底座下降。 最初，第一环位于靠近衬底的位置，以防止第一膜在第一区上沉积。 然后将基座下降到第一环被支撑的腿部从衬底移开的位置。 这使得第二环在第二位置处作为有效的排除环，使得第二膜沉积在第一和第二区上方并且还向外延伸以覆盖并保护第一膜的边缘。

公开(公告)号：US5914018A

公开(公告)日：1999-06-22

申请号：US702823

申请日：1996-08-23

申请人： Jianming Fu ,  James van Gogh

发明人： Jianming Fu ,  James van Gogh

IPC分类号： C23C14/34 ,  H01J37/34 ,  H01L21/203

CPC分类号： H01J37/3441 ,  C23C14/3407 ,  H01J37/34 ,  H01J37/3423

摘要： An improved sputter target and shield eliminate redeposition of sputtered material onto the target and prevents the formation of deposits on the electrically insulative member between the target and enclosure wall. The sputter target is designed to allow the plasma to sputter the entire sidewall of the target while the a narrow passage between the target, backing plate and shield protects the insulative member from line-of-sight deposition, prevents formation of a plasma within the passage without causing arcing between the backing plate and shield. The target of the present invention is generally disk-shaped with a sloped or frustoconical sidewall surface around the perimeter edge.

公开(公告)号：US06193811B1

公开(公告)日：2001-02-27

申请号：US09261700

申请日：1999-03-03

申请人： Arvind Sundarrajan ,  Dinesh Saigal ,  Peijun Ding ,  James van Gogh

发明人： Arvind Sundarrajan ,  Dinesh Saigal ,  Peijun Ding ,  James van Gogh

IPC分类号： B08B502

CPC分类号： C23C16/4408 ,  C23C14/564 ,  C23C16/4411 ,  H01L21/67103 ,  Y10S438/905

摘要： Methods for baking-out and for cooling a vacuum chamber are provided. In a first aspect, an inert gas which conducts heat from the vacuum chamber's bake-out lamps to the shield and from the shield to the other parts within the vacuum chamber is introduced to the chamber during chamber bake-out. The inert gas preferably comprises argon, helium or nitrogen and preferably raises the chamber pressure to about 500 Torr during chamber bake-out. A semiconductor processing apparatus also is provided having a controller programmed to perform the inventive bake-out method. In a second aspect, a process chamber is provided having at least one source of a cooling gas. The cooling gas is input to the chamber and is allowed to thermally communicate with the chamber body and components. The cooling gas may reside in the chamber for a period of time or may be continuously flowed through the chamber. Once the chamber reaches a target temperature the cooling gas is evacuated.

摘要翻译： 提供烘烤和冷却真空室的方法。 在第一方面，在真空室中将惰性气体从真空室的烘烤灯传导到屏蔽和从屏蔽体到真空室内的其他部分，在室烘烤期间被引入到室中。 惰性气体优选地包括氩气，氦气或氮气，并且优选地在腔室烘烤期间将室压力提高到约500乇。 还提供了一种半导体处理装置，其具有被编程为执行本发明的烘烤方法的控制器。 在第二方面，提供具有至少一个冷却气体源的处理室。 冷却气体被输入到腔室并允许与室主体和部件热连通。 冷却气体可以在腔室中停留一段时间，或者可以连续地流过腔室。 一旦室达到目标温度，则冷却气体被抽空。

公开(公告)号：US6059945A

公开(公告)日：2000-05-09

申请号：US165662

申请日：1998-10-03

申请人： Jianming Fu ,  James van Gogh

发明人： Jianming Fu ,  James van Gogh

IPC分类号： C23C14/34 ,  H01J37/34 ,  H01L21/203

CPC分类号： H01J37/3441 ,  C23C14/3407 ,  H01J37/34 ,  H01J37/3423

摘要： An improved sputter target and shield eliminate redeposition of sputtered material onto the target and prevents the formation of deposits on the electrically insulative member between the target and enclosure wall. The sputter target is designed to allow the plasma to sputter the entire sidewall of the target while the a narrow passage between the target, backing plate and shield protects the insulative member from line-of-sight deposition, prevents formation of a plasma within the passage without causing arcing between the backing plate and shield. The target of the present invention is generally disk-shaped with a sloped or frustoconical sidewall surface around the perimeter edge.

摘要翻译： 改进的溅射靶和屏蔽层消除了溅射材料在靶上的再沉积，并防止在靶和外壳壁之间的电绝缘构件上形成沉积物。 溅射靶被设计成允许等离子体溅射靶的整个侧壁，同时目标板，背板和屏蔽件之间的窄通道保护绝缘构件免受视线沉积，防止在通道内形成等离子体 而不会在背板和屏蔽之间产生电弧。 本发明的目标通常为圆盘状，具有围绕周边边缘的倾斜或截头圆锥形侧壁表面。

公开(公告)号：US06579426B1

公开(公告)日：2003-06-17

申请号：US08857921

申请日：1997-05-16

申请人： James van Gogh ,  John C. Forster

发明人： James van Gogh ,  John C. Forster

IPC分类号： C23C1434

CPC分类号： H01F29/10 ,  H01F29/12 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/34

摘要： Capacitances in an impedance-matching box for an RF coil, in a plasma deposition system for depositing a film of sputtered target material on a substrate, can be varied during the deposition process so that the RF coil and substrate heating, and the film deposition, are more uniform due to “time-averaging” of the RF voltage distributions along the RF coil.

摘要翻译： 用于在衬底上沉积溅射靶材的膜的等离子体沉积系统中用于RF线圈的阻抗匹配盒中的电容可以在沉积工艺期间变化，使得RF线圈和衬底加热以及膜沉积， 由于RF线圈的RF电压分布的“时间平均”，因此更均匀。

公开(公告)号：US06228236B1

公开(公告)日：2001-05-08

申请号：US09422897

申请日：1999-10-22

申请人： Michael Rosenstein ,  Jianming Fu ,  Leif Eric Delaurentis ,  James van Gogh ,  Alan Liu

发明人： Michael Rosenstein ,  Jianming Fu ,  Leif Eric Delaurentis ,  James van Gogh ,  Alan Liu

IPC分类号： C23C1435

CPC分类号： H01J37/3455 ,  H01J37/3408

摘要： A magnetron for use in a DC magnetron sputtering reactor that can rotate at a smaller diameter during a deposition phase and at a larger diameter during a cleaning phase, whereby sputter material redeposited outside of the deposition sputtering track is removed during the cleaning phase. An embodiment for a two-diameter magnetron includes a swing arm fixed on one end to the magnetron rotation motor shaft and on the other end to a pivot shaft, pivotably coupled to the magnetron. When the magnetron is rotated in different directions, hydrodynamic forces between the magnetron and the chilling water bath cause magnetron to pivot about the pivot shaft. Two mechanical detents fix the limits of the pivoting and hence establish the two diameters of rotation.

摘要翻译： 用于DC磁控溅射反应器的磁控管，其可以在清洁阶段期间在沉积阶段和较大直径期间以较小直径旋转，由此在清洗阶段期间去除沉积在沉积溅射轨道之外的溅射材料。 两直径磁控管的一个实施例包括一个摆臂，固定在磁控管旋转电机轴的一端，另一端固定在枢转轴上，该枢轴与磁控管相连。 当磁控管沿不同方向旋转时，磁控管和冷却水浴之间的流体动力使磁控管绕枢轴转动。 两个机械制动器固定了转动的极限，从而建立了两个旋转直径。

公开(公告)号：US06023038A

公开(公告)日：2000-02-08

申请号：US931170

申请日：1997-09-16

申请人： James van Gogh

发明人： James van Gogh

IPC分类号： C23C14/40 ,  H01J37/32 ,  H01J37/34 ,  H01L21/302 ,  H01L21/3065 ,  B23K10/00 ,  H05H1/46

CPC分类号： H01J37/32174 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/34 ,  H01J37/3402 ,  H01J2237/022

摘要： A method and apparatus for pre-heating a coil used to generate a plasma field in a processing chamber in a semiconductor fabrication system. The coil is pre-heated in the chamber prior to sputter depositing material onto a substrate and workpiece. The coil is pre-heated to a predetermined temperature, which is preferably equal to or greater than the equilibrium temperature attained by the coil during sputter deposition processes. Pre-heating may be effected with a preheating current having a frequency lower than the minimum frequency required to ignite a plasma, or when the processing chamber contains an atmosphere which prevents formation of a plasma. The coil may pre-heated for a predetermined time period.

摘要翻译： 一种用于预加热用于在半导体制造系统中的处理室中产生等离子体场的线圈的方法和装置。 在将材料溅射到衬底和工件之前，将线圈预先在腔室中预热。 线圈被预热到预定温度，其优选等于或大于在溅射沉积工艺期间线圈获得的平衡温度。 可以用具有低于点燃等离子体所需的最小频率的频率的预热电流或者当处理室含有防止形成等离子体的气氛时进行预热。 线圈可以预热预定的时间段。