公开(公告)号：US5907220A

公开(公告)日：1999-05-25

申请号：US615771

申请日：1996-03-13

申请人： Avi Tepman ,  James van Gogh

发明人： Avi Tepman ,  James van Gogh

IPC分类号： C23C14/35 ,  C23C14/56 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  C23C14/34

CPC分类号： H01J37/3494 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subseguent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.

摘要翻译： 一种用于控制用于在真空室中溅射靶的表面的磁控管的操作的方法，所述方法包括以下步骤：在溅射的低压阶段期间，使由磁控管源产生的磁场被限制 主要到目标表面的内部区域，以便在溅射过程中减少电子从目标的泄漏; 并且在溅射的次级高压阶段期间，使得由磁体组件产生的磁场延伸到目标表面的外部区域中，从而从靶的表面的外部区域溅射材料。 溅射的高压相的压力高于溅射的低压相的压力。

公开(公告)号：US06228235B1

公开(公告)日：2001-05-08

申请号：US09261002

申请日：1999-03-02

申请人： Avi Tepman ,  James van Gogh

发明人： Avi Tepman ,  James van Gogh

IPC分类号： C23C1435

CPC分类号： H01J37/3494 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subsequent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.

摘要翻译： 一种用于控制用于在真空室中溅射靶的表面的磁控管的操作的方法，所述方法包括以下步骤：在溅射的低压阶段期间，使由磁控管源产生的磁场被限制 主要到目标表面的内部区域，以便在溅射过程中减少电子从目标的泄漏; 并且在随后的溅射高压阶段期间，使得由磁体组件产生的磁场延伸到目标表面的外部区域中，从而从靶的表面的外部区域溅射材料。 溅射的高压相的压力高于溅射的低压相的压力。

公开(公告)号：US5922133A

公开(公告)日：1999-07-13

申请号：US928995

申请日：1997-09-12

申请人： Avi Tepman ,  James van Gogh

发明人： Avi Tepman ,  James van Gogh

IPC分类号： C23C16/04 ,  C23C16/458 ,  H01L21/687 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/68735 ,  C23C14/50 ,  C23C14/564 ,  H01L21/68721

摘要： An exclusion ring system for depositing a film with multiple exclusion zones on a substrate in a deposition apparatus having a pedestal for supporting the substrate at different positions. A first exclusion ring is positioned above the substrate and pedestal and extends over a first zone overlying the perimeter of the substrate up to a first inner periphery. A second ring is positioned between the first ring and the substrate and extends over a second zone overlying the perimeter of the substrate outwardly of the first zone to a second inner periphery lying outwardly of the first inner periphery. When the pedestal is in a raised position, it supports the rings. When the pedestal is in a lowered position, the rings are supported by legs resting on a stationary wall, the legs of the first ring being effectively longer than the legs of the second ring so that the rings are sequentially moved away from the substrate as the pedestal is lowered. Initially, the first ring is in a position proximate the substrate to prevent deposition of the first film over the first zone. Then the pedestal is lowered to a position where the first ring is moved away from the substrate by its leg being supported. This leaves the second ring as an effective exclusion ring at the second position so that the second film is deposited over the first and over the second zone and also extends outwardly to cover and protect the edge of the first film.

摘要翻译： 一种用于在具有用于在不同位置支撑衬底的基座的沉积设备中的衬底上沉积具有多个排除区域的膜的排除环系统。 第一排除环位于衬底和基座上方并且在覆盖衬底的周边的第一区域上延伸到第一内周边。 第二环定位在第一环和衬底之间并且在覆盖第一区域外部的衬底的周边上的第二区域上延伸到位于第一内周边外侧的第二内周边。 当基座处于升高位置时，它支撑环。 当基座处于降低位置时，环由搁置在固定壁上的腿支撑，第一环的腿比第二环的腿部有效地长，使得环从基底依次移动离开基底 底座下降。 最初，第一环位于靠近衬底的位置，以防止第一膜在第一区上沉积。 然后将基座下降到第一环被支撑的腿部从衬底移开的位置。 这使得第二环在第二位置处作为有效的排除环，使得第二膜沉积在第一和第二区上方并且还向外延伸以覆盖并保护第一膜的边缘。

公开(公告)号：US20080292433A1

公开(公告)日：2008-11-27

申请号：US11747391

申请日：2007-05-11

申请人： Robert Z. Bachrach ,  Avi Tepman ,  Alexander S. Polyak

发明人： Robert Z. Bachrach ,  Avi Tepman ,  Alexander S. Polyak

IPC分类号： B65H5/00

CPC分类号： C23C16/54 ,  C23C14/568 ,  H01L31/18

摘要： The present invention generally comprises equipment for an automated high volume batch work-piece manufacturing factory comprising work-piece handling and work-piece processing in a high productivity factory architecture capable of producing 1,000 or more work-piece an hour. The work-pieces may be presented to the equipment from a stacked supply to a parallel array. Additionally, the work-pieces may be transferred between manufacturing architectures by an array to array batch transfer. The work-pieces may be transferred within the manufacturing architecture in a parallel to parallel batch transfer operation. The robotic operations may be between robotic devices, between robotic devices and processing equipment, and within processing equipment.

摘要翻译： 本发明通常包括用于自动化大批量批量工件制造工厂的设备，其包括能够每小时生产1,000个或更多个工件的高生产率工厂结构中的工件处理和工件加工。 工件可以从堆叠的供应提供给设备到并行阵列。 另外，工件可以通过阵列在制造架构之间转移到阵列批量传输。 工件可以在并行批量传输操作的同时在制造架构内转移。 机器人操作可以在机器人设备之间，机器人设备和处理设备之间以及处理设备内。

公开(公告)号：US20080210258A1

公开(公告)日：2008-09-04

申请号：US12102846

申请日：2008-04-14

申请人： Joseph Yudovsky ,  Avi Tepman ,  Kenneth R. Reynolds ,  Younes Achkire ,  Dan A. Marohl ,  Steve G. Ghanayem ,  Alexander S. Polyak ,  Gary Ettinger ,  Haochuan Zhang ,  Hui Chen

发明人： Joseph Yudovsky ,  Avi Tepman ,  Kenneth R. Reynolds ,  Younes Achkire ,  Dan A. Marohl ,  Steve G. Ghanayem ,  Alexander S. Polyak ,  Gary Ettinger ,  Haochuan Zhang ,  Hui Chen

IPC分类号： B08B7/00 ,  A47L25/00

CPC分类号： H01L21/67046 ,  B08B1/04

摘要： A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.

摘要翻译： 提供了一种洗涤器箱，其包括适于接收用于清洁的基底的罐，支撑在罐外部并且适于耦合到设置在罐内的洗涤器刷的端部;马达，其安装到每个支撑件上并适于旋转洗涤器 电刷，支架通过适于允许洗涤器刷子进入的球面轴承可枢转地安装的基座，经由曲柄和摇臂机构适应的基本上同时地使支撑件朝向或远离彼此枢转的电刷间隙致动器 以便允许洗涤器刷子基本上同时实现或断开与基板的接触，以及适于将两个球形轴承朝向或远离彼此移动的脚趾致动器，以便调节洗涤器之间的束缚角度 刷子

公开(公告)号：US20060006058A1

公开(公告)日：2006-01-12

申请号：US10888383

申请日：2004-07-09

申请人： Avi Tepman

发明人： Avi Tepman

IPC分类号： C23C14/32

CPC分类号： C23C14/3407

摘要： A sputtering target, particularly for sputter depositing a target material onto large rectangular panels, in which a plurality of target tiles are bonded to a backing plate in a two-dimensional non-rectangular array such that the tiles meet at interstices of no more than three tile, thus locking the tiles against excessive misalignment during bonding. The rectangular tiles may be arranged in staggered rows or in a herringbone or zig-zag pattern. Hexagonal and triangular tiles also provide many of the advantages of the invention.

公开(公告)号：US20050139160A1

公开(公告)日：2005-06-30

申请号：US11059846

申请日：2005-02-16

申请人： Lawrence Lei ,  Alfred Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Glenn

发明人： Lawrence Lei ,  Alfred Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Glenn

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45574 ,  H01L21/6719

摘要： Embodiments of the present invention generally relate to a small volume chamber with a substrate support. One embodiment of a processing chamber includes a first assembly having a substrate support, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the substrate support. The chamber may further include a gas distribution assembly disposed over the substrate support. The first assembly and the gas distribution assembly can be selectively positioned between an open position and a closed position.

摘要翻译： 本发明的实施例通常涉及具有基板支撑件的小容积室。 处理室的一个实施例包括具有衬底支撑件的第一组件，围绕衬底接收表面的周边设置的泵送环以及设置在衬底支撑件上方的气体分配组件。 该腔室还可包括设置在衬底支撑件上方的气体分配组件。 第一组件和气体分配组件可以选择性地定位在打开位置和关闭位置之间。

公开(公告)号：US06881310B2

公开(公告)日：2005-04-19

申请号：US10655949

申请日：2003-09-05

申请人： Avi Tepman

发明人： Avi Tepman

IPC分类号： H01J37/34 ,  C23C14/35

CPC分类号： H01J37/3497 ,  H01J37/3405

摘要： Apparatus and method for cooling a magnetron sputtering apparatus. More particularly, a system including a stationary conduit, a hollow drive shaft rotatably coupled to the stationary conduit, and a magnetron coupled to the hollow drive shaft.

摘要翻译： 用于冷却磁控管溅射装置的装置和方法。 更具体地，包括固定导管，可旋转地联接到固定导管的中空驱动轴和耦合到中空驱动轴的磁控管的系统。

公开(公告)号：US06722834B1

公开(公告)日：2004-04-20

申请号：US08946920

申请日：1997-10-08

申请人： Avi Tepman

发明人： Avi Tepman

IPC分类号： B44C122

CPC分类号： H01L21/68707 ,  H01L21/67742 ,  Y10S414/135

摘要： A robot blade and a method of using the robot blade for transferring objects, namely substrates, through a process system, the robot blade comprising an upper platform having a first object supporting surface and a lower platform having a second object supporting surface. The robot blade is mounted onto a moveable member, and the assembly facilitates substrate transfers, such as removal of a processed substrate and insertion of an unprocessed substrate within a processing chamber through a single entry of the robot blade into the processing chamber.

摘要翻译： 一种机器人刀片和使用所述机器人刀片用于通过处理系统传送物体即基底的方法，所述机器人刀片包括具有第一物体支撑表面的上平台和具有第二物体支撑表面的下平台。 机器人刀片安装在可移动构件上，并且组件便于衬底转移，例如移除经处理的衬底并且通过机器人刀片的单个进入到处理室中的未处理衬底在处理室内的插入。

公开(公告)号：US06603269B1

公开(公告)日：2003-08-05

申请号：US09593586

申请日：2000-06-13

申请人： Be Van Vo ,  Salvador P. Umotoy ,  Son N. Trinh ,  Lawrence Chung-Lai Lei ,  Sergio Edelstein ,  Avi Tepman ,  Chien-Teh Kao ,  Kenneth Tsai

发明人： Be Van Vo ,  Salvador P. Umotoy ,  Son N. Trinh ,  Lawrence Chung-Lai Lei ,  Sergio Edelstein ,  Avi Tepman ,  Chien-Teh Kao ,  Kenneth Tsai

IPC分类号： C23C1600

CPC分类号： H01J37/32192

摘要： An improved plasma applicator for remotely generating a plasma for use in semiconductor manufacturing is provided. In one embodiment, a plasma applicator is comprised of a chamber assembly, a removable waveguide adapter and a circular clamp which secures the adapter to the chamber assembly. The chamber assembly includes an aperture plate, a microwave transparent window, a chamber body and a microwave sensor which is mounted on the chamber body. The chamber body has a proximate end opening adapted to admit microwave energy into the cavity and a distal end disposed generally on the opposite side of the cavity from the proximate end opening. The chamber body further has a gas outlet port adapted to permit the flow of an excited gas out of the cavity and a gas inlet port adapted to admit a precursor gas into the cavity. The gas inlet port has a center axis which is disposed between the proximate end opening of the chamber body and the midpoint between the proximate end opening and the distal end of the body.

摘要翻译： 提供了用于远程产生用于半导体制造的等离子体的改进的等离子体施加器。 在一个实施例中，等离子体施加器由腔室组件，可移除波导适配器和将适配器固定到腔室组件的圆形夹具构成。 腔室组件包括孔板，微波透明窗，室主体和安装在腔体上的微波传感器。 室主体具有适于将微波能量引入空腔中的近端开口，以及大致位于与近端开口相反的空腔相对侧的远端。 腔体还具有气体出口端口，其适于允许将激发气体流出空腔，气体入口端口适于将前体气体引入空腔。 气体入口具有中心轴线，该中心轴线设置在腔室主体的近端开口和本体的近端开口和远端之间的中点之间。