公开(公告)号：US08957687B2

公开(公告)日：2015-02-17

申请号：US13457072

申请日：2012-04-26

Applicant: Axel Nackaerts ,  Matthias Merz ,  Youri Victorovitch Ponomarev

Inventor： Axel Nackaerts ,  Matthias Merz ,  Youri Victorovitch Ponomarev

IPC: G01R27/28 ,  G01N27/414

CPC classification number: G01N27/414 ,  G01N27/4148

Abstract: The invention relates to an electrochemical sensor integrated on a substrate, the electrochemical sensor including: a field effect transistor integrated on the substrate and having a source, gate and drain connections, said gate of the field effect transistor including: a sensing gate conductively coupled to a sensing electrode; and a bias gate, wherein the sensing gate is capacitively coupled to the bias gate and the bias gate is capacitively coupled to the substrate.

Abstract translation: 本发明涉及集成在基板上的电化学传感器，该电化学传感器包括：集成在基板上并具有源极，栅极和漏极连接的场效应晶体管，场效应晶体管的所述栅极包括：感测栅极，导电耦合到 感测电极; 以及偏置栅极，其中所述感测栅极电容耦合到所述偏置栅极，并且所述偏置栅极电容耦合到所述衬底。

公开(公告)号：US20120286803A1

公开(公告)日：2012-11-15

申请号：US13457072

申请日：2012-04-26

Applicant: Axel Nackaerts ,  Matthias Merz ,  Youri Victorovitch Ponomarev

Inventor： Axel Nackaerts ,  Matthias Merz ,  Youri Victorovitch Ponomarev

IPC: G01R27/28 ,  H01L29/78

CPC classification number: G01N27/414 ,  G01N27/4148

Abstract: The invention relates to an electrochemical sensor integrated on a substrate, the electrochemical sensor comprising: a field effect transistor integrated on the substrate and having a source, gate and drain connections, said gate of the field effect transistor comprising: a sensing gate conductively coupled to a sensing electrode; and a bias gate, wherein the sensing gate is capacitively coupled to the bias gate and the bias gate is capacitively coupled to the substrate.

Abstract translation: 本发明涉及集成在衬底上的电化学传感器，该电化学传感器包括：集成在衬底上并具有源极，栅极和漏极连接的场效应晶体管，场效应晶体管的所述栅极包括：传感栅极，其传导耦合到 感测电极; 以及偏置栅极，其中所述感测栅极电容耦合到所述偏置栅极，并且所述偏置栅极电容耦合到所述衬底。

公开(公告)号：US08872520B2

公开(公告)日：2014-10-28

申请号：US13010732

申请日：2011-01-20

Applicant: Axel Nackaerts ,  Matthias Merz

Inventor： Axel Nackaerts ,  Matthias Merz

IPC: G01N27/02 ,  G01N27/416 ,  G01N27/403 ,  G01N27/414

CPC classification number: G01N27/414 ,  G01N27/4148

Abstract: The present invention relates to a sensor comprising a substrate (10) carrying a field effect transistor (30) having a gate electrode (32), the sensor further comprising a measurement electrode (36) spatially separated from the gate electrode; and a reference electrode (40), said measurement electrode being in configurable conductive contact with said gate electrode, the sensor further comprising a charge storage element (60) comprising a first electrode connected to a node (38) between the measurement electrode and the gate electrode; and a second electrode configurably connected to a known potential source (80). The present invention further relates to a method of performing a measurement with such a sensor.

Abstract translation: 本发明涉及一种传感器，包括：承载具有栅电极（32）的场效应晶体管（30）的衬底（10），该传感器还包括与栅电极空间分离的测量电极（36） 和参考电极（40），所述测量电极与所述栅电极配置为导电接触，所述传感器还包括电荷存储元件（60），所述电荷存储元件包括连接到所述测量电极和所述栅极之间的节点（38）的第一电极 电极; 以及可配置地连接到已知电位源（80）的第二电极。 本发明还涉及使用这种传感器进行测量的方法。

公开(公告)号：US09546884B2

公开(公告)日：2017-01-17

申请号：US12889832

申请日：2010-09-24

Applicant: Roel Daamen ,  Aurelie Humbert ,  Matthias Merz ,  Youri Victorovitch Ponomarev

Inventor： Roel Daamen ,  Aurelie Humbert ,  Matthias Merz ,  Youri Victorovitch Ponomarev

IPC: G06K19/06 ,  G01D5/14

CPC classification number: G01D5/14 ,  H01L2224/11

Abstract: A sensor comprising a silicon substrate having a first and a second surface, integrated circuitry provided on the first surface of the silicon substrate, and a sensor structure provided on the second surface of the silicon substrate. The sensor structure and the integrated circuitry are electrically coupled to each other.

Abstract translation: 一种传感器，包括具有第一和第二表面的硅衬底，设置在硅衬底的第一表面上的集成电路以及设置在硅衬底的第二表面上的传感器结构。 传感器结构和集成电路彼此电耦合。

公开(公告)号：US08988088B2

公开(公告)日：2015-03-24

申请号：US13510368

申请日：2010-11-29

Applicant: Aurelie Humbert ,  Matthias Merz ,  Roel Daamen ,  Youri Victorovitch Ponomarev

Inventor： Aurelie Humbert ,  Matthias Merz ,  Roel Daamen ,  Youri Victorovitch Ponomarev

IPC: G01N27/04

CPC classification number: G01N27/041 ,  G01N27/048

Abstract: Disclosed is a liquid immersion sensor comprising a substrate (10) carrying a conductive sensing element (20) and a corrosive agent (30) for corroding the conductive sensing element, said corrosive agent being immobilized in the vicinity of the conductive sensing element and being soluble in said liquid.

Abstract translation: 公开了一种液浸传感器，其包括承载导电感测元件（20）的基底（10）和用于腐蚀导电感测元件的腐蚀剂（30），所述腐蚀剂固定在导电感测元件附近并且是可溶的 在所述液体中。

公开(公告)号：US08801917B2

公开(公告)日：2014-08-12

申请号：US13061110

申请日：2009-08-24

Applicant: Matthias Merz ,  Youri Victorovitch Ponomarev ,  Gilberto Curatola

Inventor： Matthias Merz ,  Youri Victorovitch Ponomarev ,  Gilberto Curatola

IPC: G01N27/327

CPC classification number: G01N27/4148 ,  G01N27/4145

Abstract: The invention relates to a method of determining a charged particle concentration in an analyte (100), the method comprising steps of: i) determining at least two measurement points of a surface-potential versus interface-temperature curve (c1, c2, c3, c4), wherein the interface temperature is obtained from a temperature difference between a first interface between a first ion-sensitive dielectric (Fsd) and the analyte (100) and a second interface between a second ion-sensitive dielectric (Ssd) and the analyte (100), and wherein the surface-potential is obtained from a potential difference between a first electrode (Fe) and a second electrode (Se) onto which said first ion-sensitive dielectric (Fsd) and said second ion-sensitive dielectric (Ssd) are respectively provided, And ii) calculating the charged particle concentration from locations of the at least two measurement points of said curve (c1, c2, c3, c4). This method, which still is a potentiometric electrochemical measurement, exploits the temperature dependency of a surface-potential of an ion-sensitive dielectric in an analyte. The invention further provides an electrochemical sensor for determining a charged particle concentration in an analyte. The invention also provides various sensors which can be used to determine the charged particle concentration, i.e. EGFET's and EIS capacitors.

Abstract translation: 本发明涉及一种测定分析物（100）中带电粒子浓度的方法，所述方法包括以下步骤：i）确定表面电位对界面温度曲线（c1，c2，c3，c3）的至少两个测量点， c4），其中所述界面温度是由第一离子敏感电介质（Fsd）和分析物（100）之间的第一界面与第二离子敏感电介质（Ssd）与分析物之间的第二界面 （100），并且其中所述表面电位由所述第一离子敏感电介质（Fsd）和所述第二离子敏感电介质（Ssd）上的第一电极（Fe）和第二电极（Se）之间的电位差获得， ），和ii）从所述曲线（c1，c2，c3，c4）的至少两个测量点的位置计算带电粒子浓度。 这种仍然是电位电化学测量的方法利用分析物中离子敏感电介质的表面电位的温度依赖性。 本发明还提供了一种用于测定分析物中带电粒子浓度的电化学传感器。 本发明还提供可用于确定带电粒子浓度的各种传感器，即EGFET和EIS电容器。

公开(公告)号：US08669124B2

公开(公告)日：2014-03-11

申请号：US13059410

申请日：2009-08-12

Applicant: Matthias Merz

Inventor： Matthias Merz

IPC: H01L21/66 ,  H01L29/66

CPC classification number: G01N33/48721 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A detector device and method of its fabrication are disclosed. Illustratively, an additional via is present through an insulator layer over a gate channel region which is on top of the channel region. The additional via is filled with conductor material. The conductor material is removed to form a chamber leading to one side of the gate channel region. Furthermore, a nanopore is etched from the chamber through the channel region.

Abstract translation: 公开了一种检测器件及其制造方法。 说明性地，在通道区域顶部的栅极沟道区域上通过绝缘体层存在另外的通孔。 额外的通孔填充有导体材料。 去除导体材料以形成通向栅极沟道区一侧的室。 此外，通过沟道区从腔室蚀刻纳米孔。

公开(公告)号：US20130032902A1

公开(公告)日：2013-02-07

申请号：US13556676

申请日：2012-07-24

Applicant: Matthias Merz

Inventor： Matthias Merz

IPC: H01L27/14 ,  H01L21/02

CPC classification number: G01N27/128 ,  G01N25/18 ,  G01N27/121 ,  G01N27/125 ,  G01N27/22 ,  G01N33/004 ,  G01N33/18 ,  G01N33/1826 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/1461 ,  H01L2924/00

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24, 26, 28) covering the metallization stack; a gas sensor including a sensing material portion (32, 74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.

Abstract translation: 公开了一种集成电路，其包括承载多个电路元件的基板（10） 互连所述电路元件的金属化堆叠（12,14,16），所述金属化堆叠包括图案化的上金属化层，包括第一金属部分（20）和第二金属部分（21）; 覆盖金属化堆叠的钝化堆叠（24,26,28）; 气体传感器，其包括在所述钝化层上的感测材料部分（32,74）; 延伸穿过所述钝化层的第一导电部分（38），其将所述感测材料部分的第一区域连接到所述第一金属部分; 以及延伸穿过所述钝化层的第二导电部分（40），其将所述感测材料部分的第二区域连接到所述第二金属部分。 还公开了制造这种IC的方法。

公开(公告)号：US20110133255A1

公开(公告)日：2011-06-09

申请号：US13059410

申请日：2009-08-12

Applicant: Matthias Merz

Inventor： Matthias Merz

IPC: H01L29/78 ,  H01L21/336 ,  B82Y15/00

CPC classification number: G01N33/48721 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A detector device: a source region (S), a drain region (D) and a gate contact (100) on a substrate (104), with a channel region between the source and drain regions (S, D), an insulator layer over the substrate, comprising vias (140, 142, 144) filled with conductor material, wherein the vias (140, 142, 144) are provided over the source, drain regions and a gate contact, an additional via (152) through the insulator layer, defining a first chamber leading to a first side of the channel region, a nanopore etched from this first chamber through the channel region, and connecting the first chamber to a second chamber, a drive means (60) for providing a voltage bias between the two chambers, a drive means for providing a voltage between the source and drain regions and gate, a current sensor (64) for sensing a charge flow between the source and the drain regions.

Abstract translation: 检测器装置：在源极和漏极区域（S，D）之间具有沟道区域的衬底（104）上的源极区（S），漏极区（D）和栅极接触（100），绝缘体层 在衬底上，包括填充有导体材料的通孔（140,142,144），其中通孔（140,142,144）设置在源极，漏极区域和栅极接触之上，通过绝缘体的附加通孔（152） 层，限定通向通道区域的第一侧的第一室，从该第一室通过沟道区蚀刻的纳米孔，以及将第一室连接到第二室;驱动装置（60），用于在 两个腔室，用于在源极和漏极区域和栅极之间提供电压的驱动装置，用于感测源极和漏极区域之间的电荷流的电流传感器（64）。

公开(公告)号：US20110100810A1

公开(公告)日：2011-05-05

申请号：US13001804

申请日：2009-05-19

Applicant: Matthias Merz

Inventor： Matthias Merz

IPC: G01N27/414 ,  H01L29/772 ,  H01L21/335

CPC classification number: G01N27/227

Abstract: A chip integrated ion sensor is provided, which comprises a substrate having arranged thereon an electrolyte insulator semiconductor structure and a reference electrode. In particular, the electrolyte insulator semiconductor (EIS) structure may be formed on a chip already processed, i.e. the EIS structure may be formed in a Back End process on an already formed chip comprising a plurality of formed electronic components. In particular, the ion sensor may be adapted to form an ion concentration sensor, e.g. a pH sensor, i.e. may form a pH sensor. The reference electrode may be a non-polarizable electrode. In particular, the reference electrode may comprise Ag or AgCl as material.

Abstract translation: 提供一种芯片集成离子传感器，其包括其上布置有电解质绝缘体半导体结构和参考电极的基板。 特别地，可以在已经处理的芯片上形成电解绝缘体半导体（EIS）结构，即EIS结构可以在已经形成的包括多个形成的电子部件的芯片的后端工艺中形成。 特别地，离子传感器可以适于形成离子浓度传感器，例如， pH传感器，即可形成pH传感器。 参考电极可以是非极化电极。 特别地，参考电极可以包括Ag或AgCl作为材料。