Process for Producing Air Gaps in Microstructures, Especially of the Air Gap Interconnect Structure Type for Integrated Circuits
    2.
    发明申请
    Process for Producing Air Gaps in Microstructures, Especially of the Air Gap Interconnect Structure Type for Integrated Circuits 有权
    在微结构中产生空气间隙的过程,特别是集成电路的空气间隙互连结构类型

    公开(公告)号:US20090280638A1

    公开(公告)日:2009-11-12

    申请号:US12434018

    申请日:2009-05-01

    Applicant: Aziz ZENASNI

    Inventor: Aziz ZENASNI

    Abstract: The invention relates to a process for producing at least one air gap in a microstructure, which comprises: 1) the supply of a microstructure comprising at least one gap filled with a sacrificial material that decomposes starting from a temperature θ1, this gap being delimited over at least one part of its surface by a non-porous membrane, composed of a material that forms a matrix and of a pore-forming agent that decomposes at a temperature θ2

    Abstract translation: 本发明涉及一种用于在微结构中产生至少一个气隙的方法,其包括:1)提供微结构,其包括填充有从温度θ1开始分解的牺牲材料的至少一个间隙,该间隙被界定在 其表面的至少一部分由无孔膜组成,其由形成基质的材料和成孔剂组成,其在温度θ2θ下分解至少20℃并分散在该孔中 矩阵; 2)在温度> =θ2但<θ1处理微结构以选择性分解成孔剂; 然后3)在温度> =θ1处理微结构以便分解牺牲材料。 应用:在微电子和微电子工业中制造用于集成电路和任何其他微结构的气隙互连结构。

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