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    Stamper-forming electrode material, stamper-forming thin film, and method of manufacturing optical disk
    2.
    发明申请
    Stamper-forming electrode material, stamper-forming thin film, and method of manufacturing optical disk 审中-公开
    压模形成用电极材料，压模成形薄膜及其制造方法

    公开(公告)号：US20020153625A1

    公开(公告)日：2002-10-24

    申请号：US10061222

    申请日：2002-02-04

    Applicant: PIONEER CORPORATION

    Inventor： Masahiro Katsumura ,  Tetsuya Iida ,  Takashi Ueno ,  Nobuhiro Oda

    IPC: B29D011/00

    CPC classification number: C25D1/10 ,  B81C99/009 ,  B81C2201/0128 ,  B81C2201/032

    Abstract: A stamper-forming electrode material contains Ag as its main ingredient and at least one other element, preferably Au and/or Cu. It is preferred that the Au and Cu contents each be 5.0 wt % or less. A stamper-forming thin film is made of this stamper-forming electrode material, whereby its corrosion resistance is improved to suppress damage to itself, and a high-quality stamper can hence be formed.

    Abstract translation: 压模形成电极材料包含Ag作为其主要成分和至少一种其它元素，优选Au和/或Cu。 Au和Cu的含量优选为5.0重量％以下。 压模形成薄膜由该压模形成用电极材料制成，由此其耐腐蚀性得到改善以抑制其自身的损坏，因此可以形成高质量的压模。

    Plasma assisted method of accurate alignment and pre-bonding for microstructure including glass or quartz chip
    4.
    发明授权
    Plasma assisted method of accurate alignment and pre-bonding for microstructure including glass or quartz chip 有权

    公开(公告)号：US09842749B2

    公开(公告)日：2017-12-12

    申请号：US15324670

    申请日：2015-11-17

    Applicant: Beijing University of Technology

    Inventor： Guangsheng Guo ,  Siyu Wang ,  Qiaosheng Pu ,  Xiayan Wang

    IPC: H01L21/26 ,  H01L21/67 ,  B81C3/00 ,  B81C1/00

    CPC classification number: H01L21/67028 ,  B81C1/00928 ,  B81C3/001 ,  B81C3/002 ,  B81C2201/0102 ,  B81C2201/0128 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2203/051 ,  H01L21/68

    Abstract: The plasma-assisted method of precise alignment and pre-bonding for microstructure of glass and quartz microchip belongs to micromachining and bonding technologies of the microchip. The steps of which are as follows: photoresist and chromium layers on glass or quartz microchip are completely removed followed by sufficient cleaning of the surface with nonionic surfactant and quantities of ultra-pure water. Then the surface treatment is proceeded for an equipping surface with high hydrophily with the usage of plasma cleaning device. Under the drying condition, the precise alignment is accomplished through moving substrate and cover plate after being washed with the help of microscope observation. Further on, to achieve precise alignment and pre-bonding of the microstructure of glass and quartz microchip, a minute quantity of ultrapure water is instilled into a limbic crevice for adhesion, and entire water is completely wiped out by vacuum drying following sufficient squeezing. Based on the steps above, it is available to achieve permanent bonding by further adopting thermal bonding method. In summary, it takes within 30 min to finish the whole operation of precise alignment and pre-bonding by this method. Besides, this method is of great promise because of its speediness, efficiency, easy maneuverability, operational safety and wide applications.

    Process for Producing Air Gaps in Microstructures, Especially of the Air Gap Interconnect Structure Type for Integrated Circuits
    5.
    发明申请
    Process for Producing Air Gaps in Microstructures, Especially of the Air Gap Interconnect Structure Type for Integrated Circuits 有权
    在微结构中产生空气间隙的过程，特别是集成电路的空气间隙互连结构类型

    公开(公告)号：US20090280638A1

    公开(公告)日：2009-11-12

    申请号：US12434018

    申请日：2009-05-01

    Applicant: Aziz ZENASNI

    Inventor： Aziz ZENASNI

    IPC: H01L21/768

    CPC classification number: B81C1/00047 ,  B81C2201/0108 ,  B81C2201/0128 ,  H01L21/7682

    Abstract: The invention relates to a process for producing at least one air gap in a microstructure, which comprises: 1) the supply of a microstructure comprising at least one gap filled with a sacrificial material that decomposes starting from a temperature θ1, this gap being delimited over at least one part of its surface by a non-porous membrane, composed of a material that forms a matrix and of a pore-forming agent that decomposes at a temperature θ2

    Abstract translation: 本发明涉及一种用于在微结构中产生至少一个气隙的方法，其包括：1）提供微结构，其包括填充有从温度θ1开始分解的牺牲材料的至少一个间隙，该间隙被界定在 其表面的至少一部分由无孔膜组成，其由形成基质的材料和成孔剂组成，其在温度θ2θ下分解至少20℃并分散在该孔中 矩阵; 2）在温度> =θ2但<θ1处理微结构以选择性分解成孔剂; 然后3）在温度> =θ1处理微结构以便分解牺牲材料。 应用：在微电子和微电子工业中制造用于集成电路和任何其他微结构的气隙互连结构。

    Process for producing air gaps in microstructures, especially of the air gap interconnect structure type for integrated circuits
    7.
    发明授权
    Process for producing air gaps in microstructures, especially of the air gap interconnect structure type for integrated circuits 有权
    在微结构中产生气隙的方法，特别是用于集成电路的气隙互连结构类型

    公开(公告)号：US08026165B2

    公开(公告)日：2011-09-27

    申请号：US12434018

    申请日：2009-05-01

    Applicant: Aziz Zenasni

    Inventor： Aziz Zenasni

    IPC: H01L21/4763

    CPC classification number: B81C1/00047 ,  B81C2201/0108 ,  B81C2201/0128 ,  H01L21/7682

    Abstract: A process for producing at least one air gap in a microstructure, including supplying a microstructure having at least one gap filled with a sacrificial material that decomposes starting from a temperature θ1, this gap being delimited over at least one part of its surface by a non-porous membrane, composed of a material that forms a matrix and of a pore-forming agent that decomposes at a temperature θ2

    Abstract translation: 一种用于在微结构中产生至少一个气隙的方法，包括提供具有填充有从温度开始分解的牺牲材料的至少一个间隙的微结构; 1，该间隙通过其表面的至少一部分被界定 由形成基质的材料和在温度下分解的成孔剂组成的无孔膜; 2＆lt;＆lt; 1; 1至少20℃，并分散在该基质中，然后处理 为了选择性地分解成孔剂，然后在温度≧≥1的条件下处理微结构，以便分解牺牲材料，温度≧＆amp;

    Plasma assisted method of accurate alignment and pre-bonding for microstructure including glass or quartz chip
    10.
    发明申请
    Plasma assisted method of accurate alignment and pre-bonding for microstructure including glass or quartz chip 有权

    公开(公告)号：US20170301564A1

    公开(公告)日：2017-10-19

    申请号：US15324670

    申请日：2015-11-17

    Applicant: Beijing University of Technology

    Inventor： Guangsheng Guo ,  Siyu Wang ,  Qiaosheng Pu ,  Xiayan Wang

    IPC: H01L21/67 ,  B81C3/00 ,  B81C1/00

    CPC classification number: H01L21/67028 ,  B81C1/00928 ,  B81C3/001 ,  B81C3/002 ,  B81C2201/0102 ,  B81C2201/0128 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2203/051 ,  H01L21/68

    Abstract: The plasma-assisted method of precise alignment and pre-bonding for microstructure of glass and quartz microchip belongs to micromachining and bonding technologies of the microchip. The steps of which are as follows: photoresist and chromium layers on glass or quartz microchip are completely removed followed by sufficient cleaning of the surface with nonionic surfactant and quantities of ultra-pure water. Then the surface treatment is proceeded for an equipping surface with high hydrophily with the usage of plasma cleaning device. Under the drying condition, the precise alignment is accomplished through moving substrate and cover plate after being washed with the help of microscope observation. Further on, to achieve precise alignment and pre-bonding of the microstructure of glass and quartz microchip, a minute quantity of ultrapure water is instilled into a limbic crevice for adhesion, and entire water is completely wiped out by vacuum drying following sufficient squeezing. Based on the steps above, it is available to achieve permanent bonding by further adopting thermal bonding method. In summary, it takes within 30 min to finish the whole operation of precise alignment and pre-bonding by this method. Besides, this method is of great promise because of its speediness, efficiency, easy maneuverability, operational safety and wide applications.

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