公开(公告)号：US20160348243A1

公开(公告)日：2016-12-01

申请号：US15114666

申请日：2015-01-22

Applicant: BASF SE

Inventor： Ke XU ,  Christian SCHILDKNECHT ,  Jan SPIELMANN ,  Juergen FRANK ,  Florian BLASBERG ,  Daniel LOEFFLER ,  Martin GAERTNER ,  Sabine WEIGUNY ,  Kerstin SCHIERLE-ARNDT ,  Katharina FEDERSEL ,  Falko ABELS

IPC: C23C16/455 ,  C07F15/06 ,  C07F15/04 ,  B01J13/00 ,  C07F3/00

CPC classification number: C23C16/45553 ,  C07F3/00 ,  C07F3/003 ,  C07F15/045 ,  C07F15/065

Abstract: The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, R5, and R6 are independent of each other hydrogen, an alkyl group, or a trialkylsilyl group, n is an integer from 1 to 3, M is a metal or semimetal, 1 X is a ligand which coordinates M, and m is an integer from 0 to 4.

公开(公告)号：US20180044357A1

公开(公告)日：2018-02-15

申请号：US15557178

申请日：2016-03-02

Applicant: BASF SE

Inventor： Jan SPIELMANN ,  Falko ABELS ,  Florian BLASBERG ,  Katharina FEDERSEL ,  Christian SCHILDKNECHT ,  Daniel LOEFFLER ,  Torben ADERMANN ,  Juergen FRANK ,  Kerstin SCHIERLE-ARNDT ,  Sabine WEIGUNY

IPC: C07F7/08 ,  C23C16/455 ,  C23C16/18 ,  C09D1/00

CPC classification number: C07F7/0814 ,  C07D207/08 ,  C09D1/00 ,  C23C16/18 ,  C23C16/409 ,  C23C16/45553

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular the present invention relates to a process comprising bringing a com-pound of general formula (I) into the gaseous or aerosol state Ln-M-XmL=formula and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, are independent of each other hydrogen, an alkyl group, an aryl group, or a SiA3 group with A being an alkyl or aryl group, and at least two of R1, R2, R3, R4 are a SiA3 group, n is an integer from 1 to 4, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 4.