PHASE SHIFT MASK AND ELECTRONIC COMPONENT MANUFACTURING METHOD

    公开(公告)号:US20210356856A1

    公开(公告)日:2021-11-18

    申请号:US16343756

    申请日:2018-10-26

    IPC分类号: G03F1/32 H01L21/027

    摘要: A phase shift mask includes a transparent substrate and light-shielding portions. The light-shielding portions include a first light-shielding portion, and over one side of it, a first compensating light-shielding portion, which has a first distance to the first light-shielding portion and a first width smaller than a resolution of an exposing machine utilized for an exposure process using the phase shift mask. The light-shielding portions can further include a second compensating light-shielding portion, having a second distance to another side of the first light-shielding portion and a second width smaller than the resolution of the exposing machine. The first distance and the second distance respectively allow the first and the second compensating light-shielding portion to reduce an exposure at a region corresponding to two sides of the first light-shielding portion during the exposure process. A method manufacturing an electronic component utilizing the phase shift mask is also provided.

    ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20170269445A1

    公开(公告)日:2017-09-21

    申请号:US15505376

    申请日:2016-08-29

    摘要: An array substrate and a manufacturing method thereof, a display panel and a display device are disclosed. The method for manufacturing an array substrate includes: forming a first via hole (11) for connecting a second transparent electrically conductive layer (39) and a gate line layer (39), a second via hole (12) for connecting a first transparent electrically conductive layer (30) and the second transparent electrically conductive layer (39), and a third via hole (13) for connecting the second transparent electrically conductive layer (39) and a source/drain electrode layer (34) on a base substrate (10) through patterning process; performing a filling process on the first via hole (11), the second via hole (12) and the third via hole (13) during a pattern of second transparent electrically conductive layer is being formed, such that each of the first via hole, the second via hole and the third via hole which are filled has a top surface which is in the same horizontal plane as portions of the second transparent electrically conductive layer (39) surrounding the respective via holes. The method can reduce the height difference between the top surface of the via hole and the transparent electrically conductive layer surrounding the via hole and to solve the problem of uneven diffusion of the PI orientation layer.

    Method for Preparing Polycrystalline Metal Oxide Pattern
    5.
    发明申请
    Method for Preparing Polycrystalline Metal Oxide Pattern 有权
    制备多晶金属氧化物图案的方法

    公开(公告)号:US20150329432A1

    公开(公告)日:2015-11-19

    申请号:US14526777

    申请日:2014-10-29

    IPC分类号: C04B41/91 C04B41/53 C04B41/00

    摘要: Disclosed is a method for preparing a polycrystalline metal oxide pattern, characterized by comprising: annealing a predetermined region of an amorphous metal oxide film by laser, so as to convert the amorphous metal oxide in the predetermined region into a polycrystalline metal oxide; and etching the amorphous metal oxide outside of the predetermined region so as to remove it. By the method according to the present invention, firstly, the predetermined region of an amorphous metal oxide film is annealed by laser so as to convert the amorphous metal oxide into a polycrystalline metal oxide, and then, the amorphous metal oxide outside of the predetermined region is etched away, thereby a polycrystalline metal oxide pattern is formed. The method for preparing a polycrystalline metal oxide pattern according to the present invention is simple, and can effectively shorten the production period and save production costs.

    摘要翻译: 公开了一种制备多晶金属氧化物图案的方法,其特征在于包括:通过激光对预定区域的非晶金属氧化物膜进行退火,以将预定区域中的非晶态金属氧化物转化成多晶金属氧化物; 并且在预定区域外蚀刻非晶态金属氧化物以便将其去除。 根据本发明的方法,首先,通过激光对非晶金属氧化物膜的预定区域进行退火,以将非晶金属氧化物转化为多晶金属氧化物,然后在预定区域外部的非晶态金属氧化物 被蚀刻掉,从而形成多晶金属氧化物图案。 根据本发明的多晶金属氧化物图案的制备方法简单,可以有效缩短生产周期,节省生产成本。

    METHOD FOR MANUFACTURING ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY APPARATUS

    公开(公告)号:US20190103419A1

    公开(公告)日:2019-04-04

    申请号:US16028017

    申请日:2018-07-05

    IPC分类号: H01L27/12 G02F1/1368

    摘要: An array substrate, a manufacturing method thereof, and a display apparatus are provided. The array substrate includes a display area and a non-display area in the periphery of the display area, the display area includes pixel regions, the display and non-display areas are provided with via holes, wherein each pixel region is provided, at a side facing a display side, with a reflection layer configured to reflect light irradiated thereon from an external light source to form a display image; and an anti-deterioration layer in contact with the reflection layer is provided in the via holes in the display and non-display areas. Thus, by using a new material, utilization of external light source is improved without additional masking process, and connection in via holes in the display area, and especially in the non-display area is achieved, which prevents deterioration of the via holes and poor contact resistance.

    Manufacturing Method of an Array Substrate
    9.
    发明申请
    Manufacturing Method of an Array Substrate 有权
    阵列基板的制造方法

    公开(公告)号:US20150348999A1

    公开(公告)日:2015-12-03

    申请号:US14519480

    申请日:2014-10-21

    IPC分类号: H01L27/12 H01L29/45 H01L29/49

    摘要: Provided is a manufacturing method of an array substrate with an etching stop layer. The method includes: forming a pattern including a gate, a gate line and a common electrode line on a substrate through a first patterning process; forming a gate insulation layer, an active layer film and an etching stop layer through a second patterning process; wherein, the etching stop layer corresponds to a gap between a source and a drain which are to be formed, and a via hole exposing the common electrode line is formed above the common electrode line; forming at least an active layer, a pattern including source, drain and data line and a protection layer through a third patterning process; wherein, the protection layer exposes a part of the drain; and forming at least a pixel electrode through a fourth patterning process; wherein, the pixel electrode is electrically connected with the drain.

    摘要翻译: 提供了具有蚀刻停止层的阵列基板的制造方法。 该方法包括:通过第一图案化工艺在衬底上形成包括栅极,栅极线和公共电极线的图案; 通过第二图案化工艺形成栅极绝缘层,有源层膜和蚀刻停止层; 其中,所述蚀刻停止层对应于要形成的源极和漏极之间的间隙,并且在所述公共电极线上方形成暴露所述公共电极线的通孔; 通过第三图案化工艺形成至少有源层,包括源极,漏极和数据线的图案和保护层; 其中,所述保护层暴露所述漏极的一部分; 以及通过第四图案化工艺形成至少一个像素电极; 其中,像素电极与漏极电连接。

    DISPLAY DEVICE, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210210527A1

    公开(公告)日:2021-07-08

    申请号:US16074185

    申请日:2017-12-14

    摘要: A method for manufacturing an array substrate, including forming a thin film transistor and a peripheral circuit; forming a passivation layer covering at least the thin film transistor and the peripheral circuit; forming a first via hole penetrating the passivation layer and exposing part of a drain of the thin film transistor, and a second via hole penetrating the passivation layer and exposing part of the peripheral circuit; forming a first conductive layer pattern on the passivation layer, the first conductive layer pattern covering the first via hole and the second via hole; forming a reflective metal layer pattern and a second conductive layer pattern on the first conductive layer pattern, the second conductive layer pattern covering the second via hole.