Growth of needlelike vls crystals
    4.
    发明授权
    Growth of needlelike vls crystals 失效
    NELELELIKE VLS水晶的生长

    公开(公告)号:US3635753A

    公开(公告)日:1972-01-18

    申请号:US3635753D

    申请日:1969-09-24

    CPC classification number: C30B11/12 Y10S148/107

    Abstract: Single crystal material of needlelike form may be obtained by means of the vapor-liquid-solid crystal growth technique, growth parameters of the growing crystalline material being controlled so as to result in the removal of the impurity agent and the concomitant decrease in the volume of the liquid solution and growth of crystalline materials evidencing sharp terminations.

    Abstract translation: 针状形状的单晶材料可以通过气 - 液 - 固晶体生长技术获得,生长结晶材料的生长参数被控制以导致杂质试剂的除去和伴随的体积减少 液体溶液和晶体材料的生长,证明了尖端的终止。

    Selective etching technique for semiconductors
    6.
    发明授权
    Selective etching technique for semiconductors 失效
    SEMICONDUCTORS的选择性蚀刻技术

    公开(公告)号:US3592706A

    公开(公告)日:1971-07-13

    申请号:US3592706D

    申请日:1968-03-20

    Inventor: WAGNER RICHARD S

    CPC classification number: H01L21/00 C23F4/00 H01L21/306

    Abstract: ALLOY SOLUTION, SO RESULTING IN UNDERSATURATION OF THE SOLUTION WITH RESPECT TO THE MATERIAL TO BE ETCHED AND CONTINUOUS DISSOLUTION OF THAT MATERIAL AT THE SOLID-LIQUID INTERFACE.

    PREFERENTIAL ETCHING OF CRYSTALLINE MATERIALS IS EFFECTED BY PROVIDING A LIQUID-ALLOY SOLUTION COMPRISING THE MATERIAL TO BE ETCHED AND ONE OR MORE OTHER COMPONENTS AT A POINT INTERMEDIATE A VAPOR AND THE SOLID MATERIAL TO BE ETCHED. IN THE OPERATION OF THE PROCESS, THE VAPOR WHICH IS CAPABLE OF REACTING CHEMICALLY WITH THE MATERIAL TO BE ETCHED SELECTIVELY REMOVES THAT MATERIAL FROM THE LIQUID-

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