Abstract:
Single crystal material of needlelike form may be obtained by means of the vapor-liquid-solid crystal growth technique, growth parameters of the growing crystalline material being controlled so as to result in the removal of the impurity agent and the concomitant decrease in the volume of the liquid solution and growth of crystalline materials evidencing sharp terminations.
Abstract:
ALLOY SOLUTION, SO RESULTING IN UNDERSATURATION OF THE SOLUTION WITH RESPECT TO THE MATERIAL TO BE ETCHED AND CONTINUOUS DISSOLUTION OF THAT MATERIAL AT THE SOLID-LIQUID INTERFACE.
PREFERENTIAL ETCHING OF CRYSTALLINE MATERIALS IS EFFECTED BY PROVIDING A LIQUID-ALLOY SOLUTION COMPRISING THE MATERIAL TO BE ETCHED AND ONE OR MORE OTHER COMPONENTS AT A POINT INTERMEDIATE A VAPOR AND THE SOLID MATERIAL TO BE ETCHED. IN THE OPERATION OF THE PROCESS, THE VAPOR WHICH IS CAPABLE OF REACTING CHEMICALLY WITH THE MATERIAL TO BE ETCHED SELECTIVELY REMOVES THAT MATERIAL FROM THE LIQUID-
Abstract:
D R A W I N G THE CONTROLLED GROWTH OF A CRYSTALLINE MATERIAL UPON A SEED CRYSTAL IS EFFECTED BY MEANS OF THE VAPOR-LIQUIDSOLID CRYSTAL GROWTH MECHANISM, THE SEED CRYSTAL BEING PHYSICALLY ISOLATED FROM THE VAPOR SOURCE BY IMMERSION THEREOF IN A LIQUID SOLUTION SUPERSATURATED WITH RESPECT TO THE CRYSTALLINE MATERIAL.