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公开(公告)号：US11894398B2
公开(公告)日：2024-02-06
申请号：US17204057
申请日：2021-03-17
Applicant: BOE Technology Group Co., Ltd.
Inventor： Jiangbo Chen , Fanli Meng , Fan Li , Shuo Zhang , Da Li , Zeyuan Li , Yanzhao Li
IPC: H01L27/144 , H01L21/02 , H01L29/66
CPC classification number: H01L27/1443 , H01L21/0217 , H01L21/02274 , H01L21/02488 , H01L21/02565 , H01L21/02631 , H01L29/66969
Abstract: A photodetector, includes a photosensitive layer, a thin film transistor, and a sensing electrode, the sensing electrode connected to one of source/drain electrodes of the thin film transistor to transmit a signal generated by the photosensitive layer to the thin film transistor; wherein the photodetector further is a hydrogen barrier layer which is disposed between the photosensitive layer and the thin film transistor and is configured to inhibit hydrogen of the photosensitive layer from entering the thin film transistor. A method of manufacturing a photodetector is further provided.
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公开(公告)号：US11275185B2
公开(公告)日：2022-03-15
申请号：US16641708
申请日：2019-06-21
Inventor： Kui Liang , Xiaohui Liu , Jiangbo Chen , Da Li , Shuo Zhang , Zeyuan Li , Fanli Meng , Fan Li
IPC: G01T1/24 , H01L27/146
Abstract: A ray detector and a ray detection panel. The ray detector includes a base substrate, a thin film transistor, a scintillator, and a photodetector; the scintillator is located on aside of the photodetector that is away from the base substrate; the photodetector includes: a first conductive structure; a semiconductor layer; a second conductive structure; a first dielectric layer; and a second dielectric layer, the second conductive structure is electrically connected with source electrode; the thin film transistor is located between the base substrate and the photodetector; and an orthographic projection of the thin film transistor on the base substrate at least partially falls into an orthographic projection of the photodetector on the base substrate.
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公开(公告)号：US11387380B2
公开(公告)日：2022-07-12
申请号：US16765476
申请日：2019-12-24
Inventor： Kui Liang , Dali Liu , Jiangbo Chen , Shuo Zhang , Fan Li , Da Li
IPC: H01L31/119 , H01L27/144 , H01L31/0224 , H01L31/20
Abstract: A flat panel detector includes a base substrate, a sensing electrode and a bias electrode over the base substrate, and an insulating layer over the sensing electrode and the bias electrode at a side distal from the substrate. A difference between thicknesses of regions of the insulating layer corresponding to the sensing electrode and the bias electrode respectively is not greater than a preset threshold. When a sufficiently high voltage is applied to the insulating layer and turned on, because the thickness thereof is relatively uniform, a dark current generated by the sensing electrode and the bias electrode under the insulating layer is relatively uniform, thereby improving detection accuracy of the flat panel detector.
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公开(公告)号：US12080731B2
公开(公告)日：2024-09-03
申请号：US17630651
申请日：2021-03-12
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Fanli Meng , Jiangbo Chen , Fan Li , Kui Liang , Da Li , Shuo Zhang , Zeyuan Li
IPC: H01L27/146 , H04N25/778 , H01L31/108
CPC classification number: H01L27/14607 , H01L27/14692 , H01L27/14698 , H04N25/778 , H01L27/14616 , H01L31/1085
Abstract: The disclosure provides a light detection substrate, a manufacturing method thereof and a light detection apparatus. The light detection substrate includes a plurality of light detection units, each of the light detection units includes a first electrode, a second electrode and a photoelectric conversion layer, a spacer region exists between orthographic projections of the first electrode and the second electrode on a substrate, the photoelectric conversion layer is provided with at least one opening, and an orthographic projection of the at least one opening on the substrate is located in the spacer region.
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