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公开(公告)号：US11894398B2
公开(公告)日：2024-02-06
申请号：US17204057
申请日：2021-03-17
发明人： Jiangbo Chen , Fanli Meng , Fan Li , Shuo Zhang , Da Li , Zeyuan Li , Yanzhao Li
IPC分类号： H01L27/144 , H01L21/02 , H01L29/66
CPC分类号： H01L27/1443 , H01L21/0217 , H01L21/02274 , H01L21/02488 , H01L21/02565 , H01L21/02631 , H01L29/66969
摘要： A photodetector, includes a photosensitive layer, a thin film transistor, and a sensing electrode, the sensing electrode connected to one of source/drain electrodes of the thin film transistor to transmit a signal generated by the photosensitive layer to the thin film transistor; wherein the photodetector further is a hydrogen barrier layer which is disposed between the photosensitive layer and the thin film transistor and is configured to inhibit hydrogen of the photosensitive layer from entering the thin film transistor. A method of manufacturing a photodetector is further provided.
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2.发明授权公开(公告)号：US10224483B2
公开(公告)日：2019-03-05
申请号：US15540711
申请日：2016-10-21
发明人： Yanzhao Li , Zhuo Chen , Yuedi He , Jie Sun
IPC分类号： H01L51/00 , G03F7/09 , H01L27/32 , G03F7/20 , G03F7/26 , G03F7/16 , H01L21/77 , H01L27/12 , H01L51/50 , H01L51/52 , H01L51/56 , G03F7/00 , G03F7/004 , G03F7/105
摘要： A crosslinkable quantum dot (QD) and a preparing method thereof, an array substrate made by using the crosslinkable quantum dot (QD) and a preparing method thereof are provided. The surface of the crosslinkable quantum dot has a pair of groups R1 and R2 capable of reacting to form a cross-linked network, or a group R3 capable of being cross-linked by a crosslinking agent to form a cross-linked network.
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公开(公告)号：US10217953B2
公开(公告)日：2019-02-26
申请号：US15539315
申请日：2016-11-30
发明人： Yuedi He , Boris Kristal , Yanzhao Li , Jie Sun
摘要： A quantum dot light-emitting device, a fabricating method thereof, and a display substrate are provided. The quantum dot light-emitting device includes: a base substrate; a first electrode layer, a light-emitting layer, a second electrode layer and an encapsulation layer which are sequentially formed on the base substrate, wherein the light-emitting layer includes a quantum dot light emitting material; a fluorescent material is disposed between the first electrode layer and the second electrode layer, and the fluorescent material includes a thermally activated delayed fluorescence (TADF) material; one of the first electrode layer and the second electrode layer is an anode layer, and the other of the first electrode layer and the second electrode layer is a cathode layer.
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4.发明申请公开(公告)号：US20180219100A1
公开(公告)日：2018-08-02
申请号：US15529682
申请日：2016-11-08
发明人： Changcheng Ju , Hu Meng , Yanzhao Li
IPC分类号： H01L29/786 , H01L29/267 , H01L29/24 , H01L29/06 , H01L29/66 , H01L21/02 , H01L29/45
CPC分类号： H01L29/78618 , B82Y10/00 , G02F1/1368 , G02F2202/36 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/0676 , H01L29/24 , H01L29/267 , H01L29/45 , H01L29/66969 , H01L29/786 , H01L29/7869 , H01L29/78696
摘要： The present application discloses a thin film transistor including a base substrate and an active layer on the base substrate having a first portion corresponding to a channel region, a second portion corresponding to a source electrode contact region, and a third portion corresponding to a drain electrode contact region. The second portion and the third portion include a three-dimensional nanocomposite material having a semiconductor material matrix and a plurality of nanopillars in the semiconductor material matrix.
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公开(公告)号：US11637262B2
公开(公告)日：2023-04-25
申请号：US17264897
申请日：2020-05-29
发明人： Wenhai Mei , Tuo Sun , Yanzhao Li
摘要： Embodiments of the present disclosure provide an array substrate and a manufacturing method therefor, and a display panel. The array substrate includes: a substrate and a pixel defining layer provided on the substrate, the pixel defining layer including a plurality of opening areas, and the plurality of opening areas being provided with a plurality of quantum dot light-emitting devices in a one-to-one correspondence manner; each of the quantum dot light-emitting devices includes a quantum dot light-emitting layer, and the quantum dot light-emitting layer is made of a quantum dot material. At least one of the pixel defining layer and the quantum dot material is magnetic.
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公开(公告)号：US11088296B2
公开(公告)日：2021-08-10
申请号：US16507262
申请日：2019-07-10
发明人： Long Wang , Yanzhao Li , Chieh Hsing Chung , Jie Sun
IPC分类号： H01L33/00 , H01L33/62 , H01L25/075 , H01L27/15
摘要： A light-emitting diode (LED) substrate and a manufacturing method thereof, and a display device are provided. The LED substrate includes a receiving substrate, the receiving substrate is provided thereon with a pixel definition layer and a plurality of LED units, the pixel definition layer defines a plurality of sub-pixel regions, each of the plurality of sub-pixel regions is configured to receive at least one of the plurality of LED units, and a solder point and an auxiliary metal member are both provided in the sub-pixel region, the auxiliary metal member is provided at a periphery of the solder point, an interval is provided between the solder point and the auxiliary metal member in a plan view of the receiving substrate, and a melting point of the auxiliary metal member is higher than a melting point of the solder point.
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公开(公告)号：US10608196B2
公开(公告)日：2020-03-31
申请号：US16053419
申请日：2018-08-02
发明人： Zhuo Chen , Yanzhao Li
IPC分类号： H01L51/50 , H01L51/00 , H01L51/56 , C09K11/66 , C09K11/07 , C09K11/56 , C09K11/02 , C09K11/88 , C09K11/70 , H01L27/32
摘要： The present disclosure discloses a quantum-dot display substrate, a method for preparing the same, and a display panel. The quantum-dot display substrate includes a substrate and a plurality of light emitting sub-pixels disposed on the substrate, in which each of the light emitting sub-pixels includes a quantum-dot light emitting layer, and the quantum-dot light emitting layer includes a crosslinked network formed by crosslinking quantum dots having a crosslinkable ligand with a crosslinking agent.
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8.发明授权公开(公告)号：US10395849B2
公开(公告)日：2019-08-27
申请号：US14785772
申请日：2015-05-29
发明人： Long Wang , Yanzhao Li , Yong Qiao , Yongchun Lu
IPC分类号： H01G11/26 , H01G11/30 , H01G11/24 , H01M4/139 , H01M4/04 , H01M4/66 , H01G11/86 , H01M10/052
摘要： An electrode plate, a manufacturing method thereof, and an energy storage device are disclosed. The method for manufacturing an electrode plate includes: forming a germanium film on a metal substrate; carrying out a topology treatment on the germanium film by using a functionalization element, to obtain the electrode plate with a topological semiconductor characteristic. The electrode plate prepared by the above method has a high conductivity and a low internal resistance.
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公开(公告)号：US10332944B2
公开(公告)日：2019-06-25
申请号：US14771455
申请日：2014-10-29
发明人： Yanzhao Li , Li Sun , Ze Liu , Huai-Ting Shih , Qijun Zha
摘要： The present disclosure provides an OLED pixel unit, a method for producing the same, a display panel and a display apparatus. The OLED pixel unit includes an organic light emitting diode configured to emit a light within a wavelength range; and a photonic crystal array located at a light exit side of the organic light emitting diode, structural parameters of the photonic crystal array depending on a preset color of the OLED pixel unit. The light emitted from the OLED has a wavelength which is selected by the photonic crystal array such that the preset color is presented at the light exit side of the OLED. It can achieve high resolution over the conventional means due to the photonic crystal array having a machining size in nanometers. Thus, the resolution of the OLED pixel unit using the photonic crystal array can be improved significantly.
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公开(公告)号：US10274615B2
公开(公告)日：2019-04-30
申请号：US15561760
申请日：2017-04-07
发明人： Xiyuan Wang , Hui Tian , Yanzhao Li
摘要： A detection panel and a detection apparatus are provided. The detection panel includes: a cesium iodide scintillator layer, which is not doped with thallium; and a photoelectric detector, which is arranged on a light emission side of the cesium iodide scintillator layer and includes a semiconductor layer; a forbidden band width of a material for forming the semiconductor layer is greater than or equal to 2.3 eV.
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