公开(公告)号：US20170062543A1

公开(公告)日：2017-03-02

申请号：US15083764

申请日：2016-03-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lungpao HSIN

IPC: H01L27/32 ,  H01L51/10 ,  H01L51/56 ,  H01L51/05

CPC classification number: H01L27/3274 ,  H01L27/124 ,  H01L27/32 ,  H01L27/326 ,  H01L51/0545 ,  H01L2251/568

Abstract: The present disclosure provides a sub-pixel arrangement including: a first sub-pixel region, a second sub-pixel region, and a connection region. Each electrode arranged in the sub-pixel and configured to implement display control may be connected to a source/drain electrode of the TFT through a via hole within the connection region, so as to cut an electrode material within the via hole to disconnect the electrode from the source/drain electrode when a pixel is to be repaired. The sub-pixel arrangement may facilitate to improve the success rate of repairing the display panels and improve the yield rate of the display panels.

Abstract translation: 本公开提供了一种子像素布置，包括：第一子像素区域，第二子像素区域和连接区域。 布置在子像素中并被配置为实现显示控制的每个电极可以通过连接区域内的通孔连接到TFT的源极/漏极，以便在通孔内切割电极材料以断开电极 当要修复像素时，从源/漏电极。 子像素布置可以有助于提高修复显示面板的成功率并提高显示面板的成品率。

公开(公告)号：US20170047383A1

公开(公告)日：2017-02-16

申请号：US14912558

申请日：2015-08-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lungpao HSIN

IPC: H01L27/32

CPC classification number: H01L27/3227 ,  H01L21/77 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3262 ,  H01L27/3276 ,  H01L2227/323

Abstract: The present disclosure relates to an array substrate, a method for manufacturing the array substrate and a display device. The array substrate may include a plurality of pixel groups. Each of the pixel groups may include a plurality of sub-pixels. Each of the sub-pixels may include a light-emitting region and a light-emitting layer absent region. And the light-emitting layer absent regions of the plurality of sub-pixels included in each of the pixel groups may define a first region. A photosensitive unit may be arranged on each first region and configured to generate an electrical signal based on an intensity of the light being sensed.

Abstract translation: 本发明涉及阵列基板，阵列基板的制造方法以及显示装置。 阵列基板可以包括多个像素组。 每个像素组可以包括多个子像素。 每个子像素可以包括发光区域和发光层缺失区域。 并且每个像素组中包括的多个子像素的缺少区域的发光层可以限定第一区域。 感光单元可以布置在每个第一区域上并被配置为基于被感测的光的强度产生电信号。

公开(公告)号：US20170200830A1

公开(公告)日：2017-07-13

申请号：US15321056

申请日：2016-03-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lungpao HSIN ,  Jingang FANG

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/24 ,  H01L29/45

CPC classification number: H01L29/78618 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present disclosure provides a thin film transistor and a method for manufacturing the same, an array substrate and a display device. The method for manufacturing a TFT includes forming a source electrode and a drain electrode, forming a metal layer on the source and drain electrodes, and forming a metal oxynitride semiconductor layer on the metal layer or on the source and drain electrodes and the metal layer. The metal layer is capable of being oxidized by oxygen ions in the metal oxynitride semiconductor layer.

公开(公告)号：US20170117416A1

公开(公告)日：2017-04-27

申请号：US15037610

申请日：2015-09-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili WANG ,  Hongda SUN ,  Fengjuan LIU ,  Lungpao HSIN

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/24 ,  H01L29/225 ,  H01L29/227

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/10 ,  H01L29/1054 ,  H01L29/225 ,  H01L29/227 ,  H01L29/24 ,  H01L29/78696

Abstract: The embodiments of the present invention provides an oxide TFT, an array substrate and a display device, an oxide channel layer of the oxide TFT comprises a front channel oxide layer and a back channel oxide layer, a conduction band bottom of the back channel oxide layer being higher than a conduction band bottom of the front channel oxide layer, and a band gap of the back channel oxide layer being larger than a band gap of the front channel oxide layer. In the oxide TFT, the array substrate and the display device provided in the present invention, it is possible to accumulate a large number of electrons through the potential difference formed between oxide channel layers of a multilayer structure so as to increase the carrier concentration in the oxide channel layers to achieve the purpose of improving TFT mobility without damaging TFT stability.

公开(公告)号：US20170294544A1

公开(公告)日：2017-10-12

申请号：US15324607

申请日：2016-06-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lungpao HSIN

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78618 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/78675

Abstract: In various embodiments of the disclosed subject matter, a method for forming a thin film transistor (TFT), a related TFT, array substrate, and display apparatus are provided. The method comprises: forming a pattern of an active layer on a base substrate and insulated from a gate electrode; forming a first initial ohmic contacting layer and a second initial ohmic contacting layer on the active layer; forming a source electrode on the first initial ohmic contacting layer, and a drain electrode on the second initial ohmic contacting layer; and performing a heating treatment to the base substrate having the source electrode and the drain electrode thereon, such that metal atoms in the source electrode diffuse to the first initial ohmic contacting layer to form a first ohmic contacting layer, and metal atoms in the drain electrode diffuse to the second initial ohmic contacting layer to form a second ohmic contacting layer.

公开(公告)号：US20170186828A1

公开(公告)日：2017-06-29

申请号：US15320506

申请日：2015-11-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lungpao HSIN ,  Chinlung LIAO ,  Meili WANG

IPC: H01L27/32 ,  H01L29/786 ,  H01L51/00 ,  H01L29/66 ,  H01L21/02 ,  H01L51/56 ,  H01L27/12

CPC classification number: H01L27/3262 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/3246 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/0003 ,  H01L51/0005 ,  H01L51/0023 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/303

Abstract: The present invention discloses an OLED array substrate and a manufacturing method thereof, a display apparatus. The OLED array substrate includes a TFT and an OLED. The method includes: forming an oxide semiconductor layer by a film forming process, and performing one patterning process on the oxide semiconductor layer to form an active layer of the TFT and a first electrode of the OLED; sequentially forming a first insulating layer and a second insulating layer on the active layer and the first electrode of the OLED, the first insulating layer being a lyophilic layer, and the second insulating layer being a lyophobic layer; forming an accommodation cavity exposing the first electrode by performing a patterning process on the first and second insulating layers; and injecting, into the accommodation cavity, and drying a solution containing an organic light emitting material to form an organic light emitting material layer.