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公开(公告)号：US12171126B2
公开(公告)日：2024-12-17
申请号：US17637504
申请日：2021-03-31
Inventor： Ning Liu , Dacheng Zhang , Tong Wu , Jun Liu , Qinghe Wang , Yang Zhang , Bin Zhou , Liangchen Yan , Huadong Wang , Chongchong Liu , Jie Zhang
IPC: H10K59/131 , H10K59/12 , H10K71/20
Abstract: A display substrate, a manufacturing method thereof, and a display device are provided. The display substrate includes a base substrate, organic light-emitting elements, a data line, and an electrode line. The organic light-emitting element includes a first electrode, a light-emitting layer and a second electrode sequentially stacked; the data line is located between the base substrate and the organic light-emitting element; the electrode line is on the same layer as the data line and located in a region outside a light-emitting region of the organic light-emitting element. The display substrate further includes at least one connection portion, which is in the region outside the light-emitting region and is configured to connect the electrode line and the first electrode, the connection portion is spaced apart from the second electrode, and the light-emitting layer covers the second electrode and the at least one connection portion.
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公开(公告)号：US11882716B2
公开(公告)日：2024-01-23
申请号：US17336523
申请日：2021-06-02
Inventor： Yang Zhang , Ning Liu , Bin Zhou , Leilei Cheng , Liangchen Yan , Jun Liu , Qinghe Wang , Tao Sun , Zhiwen Luo
IPC: H10K50/824 , H10K50/84 , H10K50/814 , H10K59/122 , H10K71/00
CPC classification number: H10K50/824 , H10K50/814 , H10K50/84 , H10K59/122 , H10K71/00
Abstract: A method for manufacturing a display panel includes: sequentially forming a conductive pattern, a light-emitting layer and a cathode layer on a substrate. The conductive pattern is formed by a one-time patterning process, and includes an auxiliary electrode layer. In a direction parallel to the substrate, both the first protective electrode and the second protective electrode in the auxiliary electrode layer extend over the metal electrode, a second orthographic projection of the second protective electrode on the substrate is within a first orthographic projection of the first protective electrode on the substrate, and an outer boundary of the second orthographic projection is staggered from an outer boundary of the first orthographic projection. The cathode layer is in contact with the first protective electrode and a sidewall of the metal electrode.
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公开(公告)号：US11527599B2
公开(公告)日：2022-12-13
申请号：US16665410
申请日：2019-10-28
Inventor： Haitao Wang , Qinghe Wang , Jun Wang , Guangyao Li , Yang Zhang , Jun Liu , Dongfang Wang
IPC: H01L27/32 , G02F1/1362
Abstract: Disclosed are an array substrate, a method for fabricating the same, a display panel, and a display device, and the array substrate includes: an underlying substrate, and gate lines and data lines located on the underlying substrate, and intersecting with each other, a layer where the gate lines are located is between a layer where the data lines are located, and the underlying substrate; and the array substrate further includes a buffer layer located between the underlying substrate and the layer where the gate lines are located; and the buffer layer includes a plurality of through-holes, where orthographical projections of the through-holes onto the underlying substrate cover orthographical projections of the areas where the gate lines intersect with the data lines, onto the underlying substrate.
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公开(公告)号：US11469260B2
公开(公告)日：2022-10-11
申请号：US16761231
申请日：2019-10-28
Inventor： Ning Liu , Bin Zhou , Jun Liu , Yang Zhang , Tongshang Su , Haitao Wang
IPC: H01L27/12 , G03F7/00 , G03F7/16 , H01L21/311 , H01L21/3213
Abstract: The present disclosure provides a display substrate, a method for preparing the same, and a display device including the display substrate. The method includes: forming a conductive layer; forming a first photoresist pattern and a second photoresist pattern on the conductive layer, in which the adhesion between the first photoresist pattern and the conductive layer is less than the adhesion between the second photoresist pattern and the conductive layer; and etching the conductive layer by using the first photoresist pattern and the second photoresist pattern as masks to form a first conductive pattern and a second conductive pattern, respectively, in which a line width difference between the first conductive pattern and the first photoresist pattern is greater than a line width difference between the second conductive pattern and the second photoresist pattern.
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公开(公告)号：US20220077255A1
公开(公告)日：2022-03-10
申请号：US17417334
申请日：2020-11-05
Inventor： Wei Li , Jingjing XIA , Bin Zhou , Yang Zhang , Guangyao Li , Wei Song , Xuanang Wang , Qinghe Wang , Liusong Ni , Jun Liu , Liangchen Yan , Ming Wang , Jingang Fang
Abstract: The present disclosure provides an array substrate, a method for manufacturing the array substrate, a display panel and a display device. The array substrate includes: a substrate; a planarization layer on a side of the substrate; a pixel defining layer configured to define a pixel opening region and located on a side of the planarization layer away from the substrate; an anode in the pixel opening region and on a side of the planarization layer away from the substrate. The array substrate further includes an intermediate insulation layer between the planarization layer and the pixel defining layer. The intermediate insulation layer has a chemical polarity between a chemical polarity of the planarization layer and a chemical polarity of the pixel defining layer.
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Patent Agency Ranking
公开(公告)号：US11233070B2
公开(公告)日：2022-01-25
申请号：US16827151
申请日：2020-03-23
Inventor： Jilei Gao , Xuebing Jiang , Songmei Sun , Peng Wu , Jian Zhao , Yang Zhang , Mo Chen
IPC: H01L27/12 , H01L29/786 , H01L27/02 , H01L29/66
Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and a display panel are provided. The thin film transistor includes: a base substrate; and a gate electrode, a gate insulating layer, an active layer and a source/drain electrode layer which are on the base substrate. The source/drain electrode layer includes a source electrode and a drain electrode. The thin film transistor further includes a light blocking layer surrounding the active layer.
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公开(公告)号：US20210335946A1
公开(公告)日：2021-10-28
申请号：US16620653
申请日：2019-03-22
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Heekyu Kim , Yuankui Ding , Leilei Cheng , Yingbin Hu , Wei Li , Yang Zhang
Abstract: The present disclosure relates to a pixel structure. The pixel structure may include a base substrate; a first insulating island on a side of the base substrate; a first electrode on a side of the first insulating island opposite front the base substrate; a second electrode on the base substrate and at a peripheral area of the first insulating island; an active layer electrically connected to the first electrode and the second electrode; a second insulating layer on a side of the active layer opposite from the base substrate; a gate electrode on a side of the second insulating layer opposite from the base substrate; and a third insulating layer on a side of the gate electrode opposite from the base substrate.
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8.发明授权公开(公告)号：US11145230B2
公开(公告)日：2021-10-12
申请号：US16898581
申请日：2020-06-11
Inventor： Jun Wang , Dongfang Wang , Liangchen Yan , Guangyao Li , Haitao Wang , Qinghe Wang , Yingbin Hu , Yang Zhang , Tongshang Su
Abstract: Embodiments of the present disclosure provide a method and a device for detecting a threshold voltage drift of a transistor in a pixel circuit, which are used for detecting the threshold voltage drift of the transistor to be detected in the pixel circuit. The transistor to be detected is at least one of the driving transistor and the detection transistor. The detection method comprises: inputting, during an inputting stage, a first turning-on voltage to the second scanning terminal, so as to turn on the detection transistor, enabling writing a first voltage into the second node through the detection signal terminal; inputting, during a detection stage, a first turning-off voltage to the second scanning terminal, so as to turn off the detection transistor, thereby detecting an actual voltage at the second node; and determining a state of the threshold voltage drift of the transistor to be detected according to the actual voltage and the first voltage.
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公开(公告)号：US11094389B2
公开(公告)日：2021-08-17
申请号：US16400368
申请日：2019-05-01
Inventor： Yang Zhang
Abstract: A shift register unit, a gate driving circuit, a display device and a driving method are disclosed. The shift register unit includes an input circuit, a first node reset circuit, an output circuit and a first reset control circuit. The input circuit is configured to provide an input signal to a first node; the first node reset circuit is configured to reset the first node under control of a level of a reset control node; the output circuit is configured to output an output signal at the output terminal under control of a level of the first node; and the first reset control circuit is configured to control the level of the reset control node in response to a reset control signal.
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10.发明授权公开(公告)号：US10818706B2
公开(公告)日：2020-10-27
申请号：US16337544
申请日：2018-05-29
Inventor： Tongshang Su , Guangcai Yuan , Dongfang Wang , Ce Zhao , Bin Zhou , Jun Liu , Jifeng Shao , Qinghe Wang , Yang Zhang
IPC: H01L27/12 , H01L29/423 , H01L29/66 , H01L29/786 , H01L29/417
Abstract: There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.
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