Prebake equipment and air discharge method thereof
    1.
    发明授权
    Prebake equipment and air discharge method thereof 有权
    预烘设备及其排气方法

    公开(公告)号:US09234702B2

    公开(公告)日:2016-01-12

    申请号:US13995495

    申请日:2012-11-09

    IPC分类号: F26B25/06 G03F7/38 F26B21/06

    CPC分类号: F26B25/06 F26B21/06 G03F7/38

    摘要: A prebake equipment for drying a substrate (105) and an air discharge method, the prebake equipment comprising: a bottom plate (105), a periphery frame (101) and an upper cover plate, the bottom plate (105) and the upper cover plate being spaced from each other, the periphery frame (101) being provided between the bottom plate (105) and the upper cover plate such that the bottom plate (105), the periphery frame (101) and the upper cover plate define a cavity, wherein discharge holes are provided at the periphery frame (101) and a filler (104) for filtering moisture and dust in the air stream is provided between the bottom plate (105) and the periphery frame (101).

    摘要翻译: 一种用于干燥基材(105)的预烘设备和排气方法,所述预烘烤设备包括:底板(105),周边框架(101)和上盖板,所述底板(105)和所述上盖 平板彼此间隔开,所述周边框架(101)设置在所述底板(105)和所述上盖板之间,使得所述底板(105),所述周边框架(101)和所述上盖板限定空腔 其特征在于,在所述周缘框架(101)设置有排出孔,在所述底板(105)与所述周边框架(101)之间设置有用于过滤空气流中的水分和灰尘的填料(104)。

    Display substrate, display panel and display apparatus

    公开(公告)号:US12032254B2

    公开(公告)日:2024-07-09

    申请号:US17922466

    申请日:2021-02-19

    IPC分类号: G02F1/1362

    CPC分类号: G02F1/136286

    摘要: A display substrate, a display panel and a display apparatus. The display substrate including: a substrate having a display area; a plurality of sub-pixels arranged in an array and located in the display area of the substrate; and a plurality of data lines arranged in the display area of the substrate; the plurality of data lines extend in a column direction of the sub-pixels, and a column of sub-pixels are electrically connected with at least one of the plurality of data lines; and for at least one of the plurality of data lines, a side of an orthographic projection of the at least one of the plurality of data lines on the substrate facing orthographic projections of sub-pixels electrically connected with the at least one of the plurality of data lines has a plurality of first concave-convex structures.

    Photoelectric Sensor and Manufacturing Method Thereof

    公开(公告)号:US20210151615A1

    公开(公告)日:2021-05-20

    申请号:US16819833

    申请日:2020-03-16

    发明人: Jianhua Du Chao Li

    摘要: The embodiment of the application discloses a photoelectric sensor and a manufacturing method thereof, wherein the photoelectric sensor comprises: a light absorbing layer for absorbing incident light to generate a photocurrent, the light absorption layer comprises a first absorption layer and a second absorption layer stacked in the direction of incident light, the first absorption layer being an intrinsic semiconductor layer of the photoelectric sensor, the second absorption layer being made of a material having a higher photoelectric conversion efficiency than the first absorption layer, and the second absorption layer has a stripe structure arranged at intervals.

    Method for preparing array substrate

    公开(公告)号:US11251207B2

    公开(公告)日:2022-02-15

    申请号:US16846888

    申请日:2020-04-13

    摘要: The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.