公开(公告)号：US09458553B2

公开(公告)日：2016-10-04

申请号：US14780444

申请日：2014-12-31

Applicant: Beijing University of Technology

Inventor： Yijian Jiang ,  Yunfeng Ma ,  Yue Wang ,  Xiaoping Mei ,  Chunping Zhang ,  Qiang Wang ,  Yangli Xu

IPC: C30B19/02 ,  C30B13/02 ,  C30B13/00 ,  C30B29/16 ,  C30B13/22 ,  C30B13/34 ,  C30B29/22

CPC classification number: C30B13/02 ,  C04B35/453 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3409 ,  C04B2235/6567 ,  C04B2235/94 ,  C30B13/00 ,  C30B13/22 ,  C30B13/24 ,  C30B13/34 ,  C30B19/02 ,  C30B29/16 ,  C30B29/22

Abstract: The disclosure provides a method for growing GZO (ZnO:Ga) single crystals and relates to the technical field of crystal growth. The method may include the following steps: firstly, preparing compact, uniform and single-phase polycrystalline rods; secondly, optimizing the components and the proportions of flux; finally, optimizing the process parameters of travelling solvent floating zone crystal growth method for GZO, such as growth power, growth rate and rotation speed, etc. GZO crystals grown by this disclosure are high in crystalline quality, consistent in growth direction and excellent in electrical properties.

Abstract translation: 本发明提供了生长GZO（ZnO：Ga）单晶的方法，涉及晶体生长的技术领域。 该方法可以包括以下步骤：首先制备紧凑，均匀和单相多晶棒; 其次，优化部件和焊剂的比例; 最终优化生长功率，生长速度和转速等GZO行走溶剂漂浮晶体生长方法的工艺参数。本发明生长的GZO晶体结晶质量高，生长方向一致，电气优良 属性。

公开(公告)号：US20160230308A1

公开(公告)日：2016-08-11

申请号：US14780444

申请日：2014-12-31

Applicant: Beijing University of Technology

Inventor： Yijian Jiang ,  Yunfeng Ma ,  Yue Wang ,  Xiaoping Mei ,  Chunping Zhang ,  Qiang Wang ,  Yangli Xu

IPC: C30B13/02 ,  C30B13/34 ,  C30B29/22 ,  C30B13/22

CPC classification number: C30B13/02 ,  C04B35/453 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3409 ,  C04B2235/6567 ,  C04B2235/94 ,  C30B13/00 ,  C30B13/22 ,  C30B13/24 ,  C30B13/34 ,  C30B19/02 ,  C30B29/16 ,  C30B29/22

Abstract: The disclosure provides a method for growing GZO (ZnO:Ga) single crystals and relates to the technical field of crystal growth. The method may include the following steps: firstly, preparing compact, uniform and single-phase polycrystalline rods; secondly, optimizing the components and the proportions of flux; finally, optimizing the process parameters of travelling solvent floating zone crystal growth method for GZO, such as growth power, growth rate and rotation speed, etc. GZO crystals grown by this disclosure are high in crystalline quality, consistent in growth direction and excellent in electrical properties.

Abstract translation: 本发明提供了生长GZO（ZnO：Ga）单晶的方法，涉及晶体生长的技术领域。 该方法可以包括以下步骤：首先制备紧凑，均匀和单相多晶棒; 其次，优化部件和焊剂的比例; 最终优化生长功率，生长速度和转速等GZO行走溶剂漂浮晶体生长方法的工艺参数。本发明生长的GZO晶体结晶质量高，生长方向一致，电气优良 属性。