摘要:
An electronic device, such as a thin film transistor containing a semiconductor of the Formula: wherein R, R′ and R″ are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represents the number of repeating units.
摘要:
An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
摘要:
A polythiophene wherein the monomer segments thereof contain wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.
摘要:
An electronic device comprising a polymer of Formula or structure (I) wherein R1 is hydrogen, halogen, a suitable hydrocarbon, or a heteroatom containing group; R2 is hydrogen, a suitable hydrocarbon, a heteroatom containing group, or a halogen; R3 and R4 are independently a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar is an aromatic component; x, y, a, b, and c represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR wherein R is hydrogen, alkyl, or aryl; and n represents the number of repeating units.
摘要翻译:一种包含式或其结构(I)的聚合物的电子器件,其中R 1是氢,卤素,合适的烃或含杂原子的基团; R 2是氢,适合的烃,含杂原子的基团或卤素; R 3和R 4独立地是合适的烃,氢,含杂原子的基团或卤素; Ar是芳香族成分; x,y,a,b和c分别表示基团或环的数目; Z表示硫,氧,硒或NR,其中R是氢,烷基或芳基; n表示重复单元的数量。
摘要:
An electronic device containing a polythiophene derived from a monomer segment or monomer segments containing two 2,5-thienylene segments, (I) and (II), and an optional divalent linkage D wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.
摘要:
A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid composition is useful for the preparation of dielectric layers for thin film transistors using solution deposition techniques.
摘要:
A thienylene-arylene polymer comprised of a repeating segment containing at least one 2,5-thienylene unit selected from (I) and (II), and from about one to about three arylene units selected from (IIIa), (IIIb), and/or (IIIc) wherein R is an alkyl or an alkoxy; R′ is halogen, alkyl, or alkoxy, and a and b represent the number of Rs.
摘要:
A process including: (a) selecting a composition including a polymer and a liquid, wherein the polymer exhibits lower solubility in the liquid at room temperature but exhibits greater solubility in the liquid at an elevated temperature, wherein the composition gels when the elevated temperature is lowered to a first lower temperature without agitation; (b) dissolving at the elevated temperature at least a portion of the polymer in the liquid; (c) lowering the temperature of the composition from the elevated temperature to the first lower temperature; (d) agitating the composition to disrupt any gelling, wherein the agitating commences at any time prior to, simultaneous with, or subsequent to the lowering the elevated temperature of the composition to the first lower temperature: (e) depositing a layer of the composition wherein the composition is at a second lower temperature lower than the elevated temperature; and (f) drying at least partially the layer.
摘要:
A polythiophene wherein the monomer segments thereof contain: wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent segment, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent segments D is 0 or 1.
摘要:
An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.