公开(公告)号：US5757474A

公开(公告)日：1998-05-26

申请号：US496061

申请日：1995-06-28

申请人： Bhushan L. Sopori ,  Larry C. Allen ,  Craig Marshall ,  Robert C. Murphy ,  Todd Marshall

发明人： Bhushan L. Sopori ,  Larry C. Allen ,  Craig Marshall ,  Robert C. Murphy ,  Todd Marshall

IPC分类号： G01N21/95 ,  G01N21/88

CPC分类号： G01N21/9505 ,  G01N21/9501

摘要： A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.

摘要翻译： 一种用于测量一块材料（通常包括光伏器件的半导体材料）的特性的方法和装置。 特征可能包括位错缺陷密度，晶界，反射率，外部LBIC，内部LBIC和少数载流子扩散长度。 该装置包括光源，积分球和与计算机通信的检测器。 校准特征的测量或计算以提供准确的绝对值。 通过用标准样品代替材料进行校准，样品具有已知量的一种或多种相关特征。 将相关特性的系统测量的量与已知量进行比较，由此产生校准常数。

公开(公告)号：US20100136715A1

公开(公告)日：2010-06-03

申请号：US11722981

申请日：2006-07-28

申请人： Bhushan L. Sopori ,  Peter Sheldon

发明人： Bhushan L. Sopori ,  Peter Sheldon

IPC分类号： H01L31/18 ,  G01N3/60 ,  H01L21/66

CPC分类号： G01N21/9505 ,  G01N21/9503 ,  H01L31/18

摘要： A method for screening silicon-based wafers used in the photovoltaic industry is provided herewith.

摘要翻译： 本文提供了一种用于光伏工业中使用的硅基晶片筛选方法。

公开(公告)号：US07238912B2

公开(公告)日：2007-07-03

申请号：US10547579

申请日：2004-10-06

申请人： Bhushan L. Sopori

发明人： Bhushan L. Sopori

IPC分类号： B23K26/38 ,  B23K26/12 ,  H01L21/00 ,  G01N21/47

CPC分类号： G01B11/06 ,  G01B11/30 ,  G01N21/55 ,  G01N21/9501 ,  G01N2201/065

摘要： An exemplary system includes a measuring device to acquire non-contact thickness measurements of a wafer and a laser beam to cut the wafer at a rate based at least in part on one or more thicknesses measurements. An exemplary method includes illuminating a substrate with radiation, measuring at least some radiation reflected from the substrate, determining one or more cutting parameters based at least in part on the measured radiation and cutting the substrate using the one or more cutting parameters. Various other exemplary methods, devices, systems, etc., are also disclosed.

摘要翻译： 示例性系统包括用于获取晶片和激光束的非接触厚度测量的测量装置，以至少部分地基于一个或多个厚度测量以速率切割晶片。 一种示例性方法包括用辐射照射衬底，测量至少一些从衬底反射的辐射，至少部分地基于测量的辐射确定一个或多个切割参数，并使用一个或多个切割参数切割衬底。 还公开了各种其它示例性方法，装置，系统等。

公开(公告)号：US5639520A

公开(公告)日：1997-06-17

申请号：US592600

申请日：1996-01-26

申请人： Bhushan L. Sopori

发明人： Bhushan L. Sopori

IPC分类号： H01L21/316 ,  B05D3/06

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31654 ,  H01L21/31658

摘要： A process for producing a silicon dioxide film on a surface of a silicon substrate. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm.sup.2 to about 6 watts/cm.sup.2 for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm.sup.2 for growth of a 100.ANG.-300.ANG. film at a resultant temperature of about 400.degree. C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO.sub.2 /Si interface to be very low.

摘要翻译： 一种在硅衬底的表面上生产二氧化硅膜的方法。 该方法包括以大约3瓦特/平方厘米至大约6瓦特/平方厘米的光功率密度的大范围的可见光和红外光在基本上纯的氧气气氛中照射硅衬底一段足以产生二氧化硅 硅衬底表面上的膜。 最终的光功率密度约为4瓦特/ cm2，用于在约400℃的最终温度下生长100个ANGSTROM -300 ANGSTROM膜。深层次瞬态光谱分析在氧化硅生产过程中检测不到引入硅衬底的可测量杂质， 表明SiO 2 / Si界面处的界面状态密度非常低。

公开(公告)号：US07815862B2

公开(公告)日：2010-10-19

申请号：US10535291

申请日：2003-03-14

申请人： Bhushan L. Sopori

发明人： Bhushan L. Sopori

IPC分类号： G01N33/00

CPC分类号： G01B11/06 ,  G01B11/0625 ,  G01N21/55 ,  G01N21/9501

摘要： Various exemplary methods (800, 900, 1000, 1100) are directed to determining wafer thickness and/or wafer surface characteristics. An exemplary method (900) includes measuring reflectance of a wafer and comparing the measured reflectance to a calculated reflectance or a reflectance stored in a database. Another exemplary method (800) includes positioning a wafer on a reflecting support to extend a reflectance range. An exemplary device (200) has an input (210), analysis modules (222-228) and optionally a database (230). Various exemplary reflectometer chambers (1300, 1400) include radiation sources positioned at a first altitudinal angle (1308, 1408) and at a second altitudinal angle (1312, 1412). An exemplary method includes selecting radiation sources positioned at various altitudinal angles. An exemplary element (1650, 1850) includes a first aperture (1654, 1854) and a second aperture (1658, 1858) that can transmit reflected radiation to a fiber and an imager, respectfully.

摘要翻译： 各种示例性方法（800,900,1000,1100）旨在确定晶片厚度和/或晶片表面特性。 示例性方法（900）包括测量晶片的反射率并将测量的反射率与存储在数据库中的计算反射率或反射率进行比较。 另一示例性方法（800）包括将晶片定位在反射支撑件上以延伸反射范围。 示例性设备（200）具有输入（210），分析模块（222-228）和可选地数据库（230）。 各种示例性反射计室（1300,1400）包括位于第一高度角（1308,1408）和第二高度角（1312,1412）的辐射源。 一种示例性方法包括选择定位在各种高度角的辐射源。 示例性元件（1650,1850）包括能够相当地将反射的辐射传输到光纤和成像器的第一孔（1654,1854）和第二孔（1658,1858）。

公开(公告)号：US5577157A

公开(公告)日：1996-11-19

申请号：US462752

申请日：1995-06-05

申请人： Bhushan L. Sopori

发明人： Bhushan L. Sopori

IPC分类号： H05B3/00 ,  H05B3/44 ,  H05B1/02 ,  H01L21/205

CPC分类号： H05B3/44 ,  H01L21/67115 ,  H05B3/0047

摘要： An optical furnace for annealing a process wafer comprising a source of optical energy, a quartz muffle having a door to hold the wafer for processing, and a quartz diffuser plate to diffuse the light impinging on the quartz muffle; a feedback system with a light sensor located in the wall of the muffle is also provided for controlling the source of optical energy.

摘要翻译： 一种用于退火包括光能源的工艺晶片的光学炉，具有用于保持用于处理的晶片的门的石英马弗管和用于扩散入射在石英马弗上的光的石英扩散板; 还提供了具有位于马弗炉壁上的光传感器的反馈系统，用于控制光能源。

公开(公告)号：US5452396A

公开(公告)日：1995-09-19

申请号：US192383

申请日：1994-02-07

申请人： Bhushan L. Sopori

发明人： Bhushan L. Sopori

IPC分类号： H05B3/00 ,  H05B3/44 ,  H05B1/02 ,  H01L21/205

CPC分类号： H05B3/44 ,  H01L21/67115 ,  H05B3/0047

摘要： An optical furnace for annealing a process wafer comprising a source of optical energy, a quartz muffle having a door to hold the wafer for processing, and a quartz diffuser plate to diffuse the light impinging on the quartz muffle; a feedback system with a light sensor located in the door or wall of the muffle is also provided for controlling the source of optical energy. The quartz for the diffuser plate is surface etched (to give the quartz diffusive qualities) in the furnace during a high intensity burn-in process.

摘要翻译： 一种用于退火包括光能源的工艺晶片的光学炉，具有用于保持用于处理的晶片的门的石英马弗管和用于扩散入射在石英马弗上的光的石英扩散板; 还提供了具有位于马弗管的门或壁中的光传感器的反馈系统，用于控制光能源。 在高强度老化过程中，用于扩散板的石英在炉中被表面蚀刻（以产生石英扩散性质）。

公开(公告)号：US5426569A

公开(公告)日：1995-06-20

申请号：US206933

申请日：1994-03-07

申请人： Bhushan L. Sopori

发明人： Bhushan L. Sopori

IPC分类号： F21V9/02 ,  F21V9/04

CPC分类号： F21V9/02 ,  F21S8/006

摘要： A method and apparatus for improving the accuracy of the simulation of sunlight reaching the earth's surface includes a relatively small heated chamber having an optical inlet and an optical outlet, the chamber having a cavity that can be filled with a heated stream of CO.sub.2 and water vapor. A simulated beam comprising infrared and near infrared light can be directed through the chamber cavity containing the CO.sub.2 and water vapor, whereby the spectral characteristics of the beam are altered so that the output beam from the chamber contains wavelength bands that accurately replicate atmospheric absorption of solar energy due to atmospheric CO.sub.2 and moisture.

摘要翻译： 用于提高到达地球表面的太阳光的模拟精度的方法和装置包括具有光学入口和光学出口的相对较小的加热室，该腔室具有可以填充加热的CO 2和水蒸气的空气 。 包括红外线和近红外光的模拟光束可以被引导通过包含CO 2和水蒸气的腔室腔，由此改变光束的光谱特性，使得来自腔室的输出光束包含准确地复制太阳能的大气吸收的波长带 能源由于大气中的二氧化碳和水分。

公开(公告)号：US06275295B1

公开(公告)日：2001-08-14

申请号：US09302727

申请日：1999-04-30

申请人： Bhushan L. Sopori

发明人： Bhushan L. Sopori

IPC分类号： G01N2147

CPC分类号： G01N21/474

摘要： The invention provides an improved optical system for determining the physical characteristics of a solar cell. The system comprises a lamp means for projecting light in a wide solid-angle onto the surface of the cell; a chamber for receiving the light through an entrance port, the chamber having an interior light absorbing spherical surface, an exit port for receiving a beam of light reflected substantially normal to the cell, a cell support, and an lower aperture for releasing light into a light absorbing baffle; a means for dispersing the reflection into monochromatic components; a means for detecting an intensity of the components; and a means for reporting the determination.

摘要翻译： 本发明提供了一种用于确定太阳能电池的物理特性的改进的光学系统。 该系统包括用于将宽立体角的光投射到电池表面上的灯装置; 用于通过入口接收光的室，所述室具有内部吸光球形表面，用于接收基本上垂直于电池反射的光束的出口端口，电池支架和用于将光释放到电池中的下孔 吸光挡板 用于将反射分散成单色组分的方法; 用于检测部件强度的装置; 以及报告确定的方法。

公开(公告)号：US5897331A

公开(公告)日：1999-04-27

申请号：US745951

申请日：1996-11-08

申请人： Bhushan L. Sopori

发明人： Bhushan L. Sopori

IPC分类号： H01L21/20 ,  H01L31/0236 ,  H01L31/052 ,  H01L31/18 ,  H01L21/00 ,  E03B11/00 ,  F17D1/00

CPC分类号： H01L21/2026 ,  H01L31/0236 ,  H01L31/056 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

摘要翻译： 一种半导体器件，其具有衬底，沉积在所述衬底上的导电中间层，其中所述中间层用作背面电极，光学反射体和用于杂质吸杂的界面，以及沉积在所述中间层上的半导体层，其中所述半导体 层具有至少与层厚度一样大的晶粒尺寸，优选为层厚度的约十倍。 该器件通过在衬底上沉积金属层，在金属涂覆的衬底上沉积半导体材料以形成复合结构，然后根据独特的时间能量用红外电磁辐射照射复合结构 首先在半导体材料的背面形成凹坑，然后在半导体材料和金属层之间的界面的整个区域上产生薄的，高反射性的低电阻率合金层，最后产生晶粒增强半导体 层。 时间能量曲线包括将能量增加到第一能量水平以启动凹坑形成并产生所需的凹坑尺寸和密度，然后升高到第二能级，其中整个器件被加热以产生界面熔体，最后 将能量减少到第三能级并保持一段时间以允许增强半导体层的晶粒尺寸。