公开(公告)号：US20110296915A1

公开(公告)日：2011-12-08

申请号：US12978590

申请日：2010-12-26

Applicant: Bin YANG ,  Yi-Lin Yan

Inventor： Bin YANG ,  Yi-Lin Yan

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01P15/18

Abstract: A accelerometer includes a base, a pair of fixed sensing blocks anchored to the base, a plurality of elastic linkages connected to the base, and a movable sensing block sandwiched between the pair of fixed sensing blocks and suspended in the base by the elastic linkages for moving either along a first or a second axes or shifting along a third axes. Each fixed sensing block defines four fixed sensing sections and each fixed sensing section sets in space with respect to the other fixed sensing sections. A projection of each fixed sensing section along a third axes exceeds the movable sensing block in a direction of the first and second axis, respectively.

Abstract translation: 加速度计包括基座，锚固到基座的一对固定感测块，连接到基座的多个弹性连杆和夹在该对固定感测块之间的可移动感测块，并通过弹性连杆悬挂在基座中 沿着第一轴或第二轴移动或沿着第三轴移动。 每个固定感测块限定了四个固定感测部分，并且每个固定感测部分相对于其它固定感测部分设置在空间中。 每个固定感测部分沿着第三轴的突起分别在第一和第二轴线的方向上超过可移动感测块。

公开(公告)号：US20120329707A1

公开(公告)日：2012-12-27

申请号：US13494480

申请日：2012-06-12

Applicant: Richard D. DiMARCHI ,  David L. SMILEY ,  Bin YANG

Inventor： Richard D. DiMARCHI ,  David L. SMILEY ,  Bin YANG

IPC: A61K38/26 ,  A61P3/10 ,  A61P3/04 ,  A61P3/00 ,  A61P25/28 ,  C07K19/00 ,  C07K17/10 ,  C07K17/08 ,  C07K14/605 ,  A61P1/16 ,  B82Y5/00

CPC classification number: C07K14/605 ,  A61K38/00 ,  A61K47/60 ,  C07K2319/00 ,  G01N33/74 ,  G01N2333/605 ,  G01N2800/042 ,  G01N2800/085 ,  G01N2800/2821 ,  G01N2800/2835

Abstract: Provided herein are peptides and variant peptides that exhibit enhanced activity at the GLP-1 receptor, as compared to native glucagon.

公开(公告)号：US20120220095A1

公开(公告)日：2012-08-30

申请号：US13467730

申请日：2012-05-09

Applicant: Man Fai NG ,  Bin YANG

Inventor： Man Fai NG ,  Bin YANG

IPC: H01L21/336

CPC classification number: H01L21/76224 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84

Abstract: A fabrication method for a semiconductor device structure is provided. The device structure has a layer of silicon and a layer of silicon dioxide overlying the layer of silicon, and the method begins by forming an isolation recess by removing a portion of the silicon dioxide and a portion of the silicon. The isolation recess is filled with stress-inducing silicon nitride and, thereafter, the silicon dioxide is removed such that the stress-inducing silicon nitride protrudes above the silicon. Next, the exposed silicon is thermally oxidized to form silicon dioxide hardmask material overlying the silicon. Thereafter, a first portion of the silicon dioxide hardmask material is removed to reveal an accessible surface of the silicon, while leaving a second portion of the silicon dioxide hardmask material intact. Next, silicon germanium is epitaxially grown from the accessible surface of the silicon.

公开(公告)号：US20120094466A1

公开(公告)日：2012-04-19

申请号：US12905805

申请日：2010-10-15

Applicant: Man Fai NG ,  Bin YANG

Inventor： Man Fai NG ,  Bin YANG

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84

Abstract: A fabrication method for a semiconductor device structure is provided. The device structure has a layer of silicon and a layer of silicon dioxide overlying the layer of silicon, and the method begins by forming an isolation recess by removing a portion of the silicon dioxide and a portion of the silicon. The isolation recess is filled with stress-inducing silicon nitride and, thereafter, the silicon dioxide is removed such that the stress-inducing silicon nitride protrudes above the silicon. Next, the exposed silicon is thermally oxidized to form silicon dioxide hardmask material overlying the silicon. Thereafter, a first portion of the silicon dioxide hardmask material is removed to reveal an accessible surface of the silicon, while leaving a second portion of the silicon dioxide hardmask material intact. Next, silicon germanium is epitaxially grown from the accessible surface of the silicon.

Abstract translation: 提供了半导体器件结构的制造方法。 器件结构具有硅层和覆盖硅层的二氧化硅层，并且该方法开始于通过去除一部分二氧化硅和一部分硅来形成隔离凹槽。 隔离凹部填充有应力诱导性氮化硅，然后去除二氧化硅，使得应力诱导性氮化硅突出于硅上方。 接下来，暴露的硅被热氧化以形成覆盖在硅上的二氧化硅硬掩模材料。 此后，去除二氧化硅硬掩模材料的第一部分以露出硅的可接近表面，同时留下二氧化硅硬掩模材料的第二部分完好无损。 接下来，从硅的可接近表面外延生长硅锗。

公开(公告)号：US20240188772A1

公开(公告)日：2024-06-13

申请号：US18139967

申请日：2023-04-27

Applicant: Bin YANG ,  Qi CHEN ,  Xiang Ye LIN

Inventor： Bin YANG ,  Qi CHEN ,  Xiang Ye LIN

IPC: A47K13/26

CPC classification number: A47K13/26

Abstract: A quick assembly and disassembly structure of a toilet seat base, including a supporting base, base boards, lid bodies, and axial hole portions and connecting portions on the supporting base; each connecting portion is provided with a sliding groove; each base board is slidable back and forth within a corresponding sliding groove and non-movable vertically within the corresponding sliding groove; one end of each lid body is pivotally connected with a corresponding connecting portion; a bottom surface of each lid body is provided with positioning ribs; a top surface of each connecting portion is provided with positioning holes; the positioning holes of each connecting portion are in communication to a corresponding sliding groove. When each lid body is closed, the positioning ribs pass through the positioning holes and fit with the positioning grooves, so that each base board and a corresponding sliding groove are fixed.

公开(公告)号：US20240188769A1

公开(公告)日：2024-06-13

申请号：US18143078

申请日：2023-05-04

Applicant: Bin YANG ,  Qi CHEN ,  Xiang Ye LIN

Inventor： Bin YANG ,  Qi CHEN ,  Xiang Ye LIN

IPC: A47K13/06

CPC classification number: A47K13/06

Abstract: A novel toilet seat structure, including a supporting base, a toilet seat, fixing blocks and two first buffered-descent modules; the toilet seat includes a child seat that has a child seat body and a first decorative lid; a rear end of the child seat body is provided with a shaft portion including first shaft sleeves and a sliding groove; the first decorative lid is detachably fitted with an opening part of the sliding groove; two ends of the supporting base are provided with second shaft sleeves respectively; a fixing block is embedded inside and being limited from rotating circumferentially in each second shaft sleeve; each first buffered-descent module is embedded inside the shaft portion through the sliding groove, and then passes through a corresponding first shaft sleeve and is then connected to a corresponding fixing block.

公开(公告)号：US20130187171A1

公开(公告)日：2013-07-25

申请号：US13356090

申请日：2012-01-23

Applicant: Michael A. GUILLORN ,  Christian LAVOIE ,  Ghavam G. SHAHIDI ,  Bin YANG ,  Zhen ZHANG

Inventor： Michael A. GUILLORN ,  Christian LAVOIE ,  Ghavam G. SHAHIDI ,  Bin YANG ,  Zhen ZHANG

IPC: H01L27/06 ,  H01L29/43 ,  H01L29/12 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L21/28518 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/823814 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/41725 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/458 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming silicide contacts includes forming a dielectric layer on a gate spacer, a gate stack, and a first semiconductor layer. The first semiconductor layer comprises source/drain regions. Contact trenches are formed in the dielectric layer so as to expose at least a portion of the source/drain regions. A second semiconductor layer is formed within the contact trenches. A metallic layer is formed on the second semiconductor layer. An anneal is performed to form a silicide region between the second semiconductor layer and the metallic layer. A conductive contact layer is formed on the metallic layer or the silicide region.

Abstract translation: 一种形成硅化物触点的方法包括在栅极间隔物，栅极叠层和第一半导体层上形成电介质层。 第一半导体层包括源/漏区。 在电介质层中形成接触沟槽，以暴露源/漏区域的至少一部分。 在接触沟槽内形成第二半导体层。 在第二半导体层上形成金属层。 进行退火以在第二半导体层和金属层之间形成硅化物区域。 在金属层或硅化物区域上形成导电接触层。

公开(公告)号：US20120235237A1

公开(公告)日：2012-09-20

申请号：US13488109

申请日：2012-06-04

Applicant: Man Fai NG ,  Bin YANG

Inventor： Man Fai NG ,  Bin YANG

IPC: H01L29/78

CPC classification number: H01L21/84 ,  H01L21/76267 ,  H01L21/823878 ,  H01L29/66772

Abstract: Methods and devices are provided for fabricating a semiconductor device having barrier regions within regions of insulating material resulting in outgassing paths from the regions of insulating material. A method comprises forming a barrier region within an insulating material proximate the isolated region of semiconductor material and forming a gate structure overlying the isolated region of semiconductor material. The barrier region is adjacent to the isolated region of semiconductor material, resulting in an outgassing path within the insulating material.

Abstract translation: 提供了用于制造在绝缘材料区域内具有阻挡区域的半导体器件的方法和装置，导致从绝缘材料区域的脱气路径。 一种方法包括在靠近半导体材料的隔离区域的绝缘材料内形成阻挡区域，并形成覆盖半导体材料的隔离区域的栅极结构。 阻挡区域与半导体材料的隔离区域相邻，导致绝缘材料内的除气路径。

公开(公告)号：US20110261979A1

公开(公告)日：2011-10-27

申请号：US12978577

申请日：2010-12-26

Applicant: Bin YANG ,  Rui Zhang

Inventor： Bin YANG ,  Rui Zhang

IPC: H04R1/00 ,  G10K13/00

CPC classification number: H04R19/005 ,  H04R7/04 ,  H04R7/18 ,  H04R2201/003 ,  H04R2307/207 ,  H04R2499/11

Abstract: A diaphragm is disclosed. The diaphragm includes a vibrating member, a projection extruding from a periphery of the vibrating member, a supporting member surrounding the vibrating member. A first gap is formed between the vibrating member and the supporting member. The supporting member includes a supporting girder surrounding and separated from the projection. A torsion girder is connected to the projection and a fixing girder is parallel to the torsion girder. A second gap is defined between the fixing girder and the torsion girder.

Abstract translation: 公开了一种隔膜。 隔膜包括振动构件，从振动构件的周边挤出的突起，围绕振动构件的支撑构件。 在振动构件和支撑构件之间形成第一间隙。 支撑构件包括围绕并与突起分离的支撑梁。 扭矩梁连接到突出部，并且固定梁平行于扭矩梁。 在固定梁和扭矩梁之间限定了第二间隙。

公开(公告)号：US20110235829A1

公开(公告)日：2011-09-29

申请号：US12978574

申请日：2010-12-26

Applicant: Bin YANG ,  Rui Zhang

Inventor： Bin YANG ,  Rui Zhang

IPC: H04R11/04 ,  H04R7/00

CPC classification number: H04R19/04

Abstract: Disclosed is a diaphragm includes a vibrating member, a plurality of supporting members extending from a periphery of the vibrating member along a direction away from a center of the diaphragm, and a plurality of separating portions each located between two adjacent supporting members. Each of the supporting members defines a first beam, a second beam, and at least one slit between the first and second beams.

Abstract translation: 公开了一种隔膜，包括振动部件，沿着远离振动膜中心的方向从振动部件的周边延伸的多个支撑部件，以及分别设置在两个相邻支撑部件之间的多个分离部。 每个支撑构件限定第一梁，第二梁和在第一和第二梁之间的至少一个狭缝。