Method for improving MOS mobility
    1.
    发明授权
    Method for improving MOS mobility 有权
    提高MOS迁移率的方法

    公开(公告)号:US06921704B1

    公开(公告)日:2005-07-26

    申请号:US10700557

    申请日:2003-11-05

    Abstract: A method of forming a silicon-on-insulator semiconductor device including providing a substrate and forming a trench in the substrate, wherein the trench includes opposing side walls extending upwardly from a base of the trench. The method also includes depositing at least two insulating layers into the trench to form a shallow trench isolation structure, wherein an innermost of the insulating layers substantially conforms to the base and the two side walls of the trench and an outermost of the insulating layers spans the side walls of the trench so that a gap is formed between the insulating layers in the trench. The gap creates compressive forces within the shallow trench isolation structure, which in turn creates tensile stress within the surrounding substrate to enhance mobility of the device.

    Abstract translation: 一种形成绝缘体上半导体器件的方法,包括提供衬底并在衬底中形成沟槽,其中沟槽包括从沟槽的基底向上延伸的相对的侧壁。 该方法还包括将至少两个绝缘层沉积到沟槽中以形成浅沟槽隔离结构,其中绝缘层的最内层基本上与基底一致并且沟槽的两个侧壁和绝缘层的最外层横跨 沟槽的侧壁,使得在沟槽中的绝缘层之间形成间隙。 间隙在浅沟槽隔离结构内产生压缩力,这反过来在周围的衬底内产生拉伸应力,以增强器件的移动性。

    Formation of high-k gate dielectric layers for MOS devices fabricated on strained lattice semiconductor substrates with minimized stress relaxation
    2.
    发明授权
    Formation of high-k gate dielectric layers for MOS devices fabricated on strained lattice semiconductor substrates with minimized stress relaxation 有权
    在具有最小应力松弛的应变晶格半导体衬底上制造的用于MOS器件的高k栅极电介质层的形成

    公开(公告)号:US06784101B1

    公开(公告)日:2004-08-31

    申请号:US10146029

    申请日:2002-05-16

    Applicant: Bin Yu David Wu

    Inventor: Bin Yu David Wu

    Abstract: A semiconductor device is formed by providing a semiconductor substrate comprising a strained lattice semiconductor layer at an upper surface thereof and having a pre-selected amount of lattice therein, forming a thin buffer/interfacial layer of a low-k dielectric material on the upper surface of the semiconductor substrate, and forming a layer of a high-k dielectric material on the thin buffer/interfacial layer of a low-k dielectric material. Embodiments include forming the thin buffer/interfacial layer and high-k layer at a minimum temperature sufficient to effect formation of the respective dielectric layer without incurring, or at least minimizing, strain relaxation of the strained lattice semiconductor layer.

    Abstract translation: 半导体器件通过在其上表面设置包含应变晶格半导体层并在其中具有预选量的晶格的半导体衬底形成,在上表面上形成低k介电材料的薄缓冲/界面层 并且在低k电介质材料的薄缓冲层/界面层上形成高k电介质材料层。 实施例包括在足以实现相应电介质层的形成的最小温度下形成薄缓冲层/界面层和高k层,而不会引起应变晶格半导体层的应变弛豫或至少最小化应变弛豫。

    DAISY CHAIN DISTRIBUTION IN DATA CENTERS
    3.
    发明申请
    DAISY CHAIN DISTRIBUTION IN DATA CENTERS 有权
    数据中心的DAISY链分配

    公开(公告)号:US20150286441A1

    公开(公告)日:2015-10-08

    申请号:US14746582

    申请日:2015-06-22

    Abstract: A method and a system to provide daisy chain distribution in data centers are provided. A node identification module identifies three or more data nodes of a plurality of data nodes. The identification of three or more data nodes indicates that the respective data nodes are to receive a copy of a data file. A connection creation module to, using one or more processors, create communication connections between the three or more data nodes. The communication connections form a daisy chain beginning at a seeder data node of the three or more data nodes and ending at a terminal data node of the three or more data nodes.

    Abstract translation: 提供了一种在数据中心提供菊花链分发的方法和系统。 节点识别模块识别多个数据节点中的三个或多个数据节点。 三个或更多个数据节点的标识指示相应的数据节点要接收数据文件的副本。 连接创建模块,用于使用一个或多个处理器在三个或更多个数据节点之间建立通信连接。 通信连接形成从三个或更多个数据节点的播种器数据节点开始并且结束于三个或更多个数据节点的终端数据节点的菊花链。

    Method and device for data transmission
    4.
    发明授权
    Method and device for data transmission 有权
    用于数据传输的方法和装置

    公开(公告)号:US09143297B2

    公开(公告)日:2015-09-22

    申请号:US13977907

    申请日:2011-07-21

    CPC classification number: H04L5/0048 H04L5/0053

    Abstract: The present disclosure discloses a method and a device for transmitting data. The method includes: a UE determining, according to a preset rule, whether to transmit PUCCH and/or PUSCH and/or an SRS or not on a last symbol of a current subframe; the UE determining the PUCCH and/or the PUSCH to be transmitted on the current subframe according to availability of the last symbol of the current subframe for transmitting the PUCCH and/or the PUSCH; and the UE transmitting the PUCCH and/or the PUSCH on the current subframe and/or transmitting the SRS on the last symbol of the current subframe. In virtue of the present disclosure, it can be realized that a plurality of types of physical uplink signals/channels are simultaneously transmitted.

    Abstract translation: 本公开公开了一种用于发送数据的方法和装置。 该方法包括:UE根据预设规则确定是否在当前子帧的最后一个符号上发送PUCCH和/或PUSCH和/或SRS; UE根据用于发送PUCCH和/或PUSCH的当前子帧的最后一个符号的可用性来确定要在当前子帧上发送的PUCCH和/或PUSCH; 并且UE在当前子帧上发送PUCCH和/或PUSCH,和/或在当前子帧的最后一个符号上发送SRS。 凭借本公开,可以实现同时发送多种类型的物理上行链路信号/信道。

    Method and Apparatus for Sending Hybrid Automatic Repeat Request Acknowledge Information
    5.
    发明申请
    Method and Apparatus for Sending Hybrid Automatic Repeat Request Acknowledge Information 有权
    用于发送混合自动重传请求确认信息的方法和装置

    公开(公告)号:US20140369290A1

    公开(公告)日:2014-12-18

    申请号:US14369403

    申请日:2012-03-09

    Abstract: Provided are a method and apparatus for sending Hybrid Automatic Repeat Request Acknowledge (HARQ-ACK) information. The method includes: when a terminal employs a physical uplink control channel (PUCCH) format 3 to transmit HARQ-ACK information and the HARQ-ACK information is transmitted over a uplink physical shared channel (PUSCH), determining the number of downlink subframes for serving cells to feed back the HARQ-ACK information; determining the number of encoded modulated symbols required for sending the HARQ-ACK information according to the determined number of downlink subframes; and mapping the HARQ-ACK information to be sent to the PUSCH of a specified uplink subframe according to the number of encoded modulated symbols and sending the HARQ-ACK information. The technical solutions provided by the disclosure are applied to improve the performance of the HARQ-ACK information, and thus improve the data performance.

    Abstract translation: 提供了一种用于发送混合自动重传请求确认(HARQ-ACK)信息的方法和装置。 该方法包括:当终端采用物理上行链路控制信道(PUCCH)格式3来发送HARQ-ACK信息,并且通过上行链路物理共享信道(PUSCH)发送HARQ-ACK信息时,确定用于服务的下行链路子帧的数量 小区来反馈HARQ-ACK信息; 根据确定的下行链路子帧的数量确定发送HARQ-ACK信息所需的编码调制符号的数量; 以及根据编码的调制符号的数量映射要发送到指定上行链路子帧的PUSCH的HARQ-ACK信息,并发送HARQ-ACK信息。 应用本公开提供的技术方案来改进HARQ-ACK信息的性能,从而提高数据性能。

    Base Station, Terminal, System And Method For Data Transmitting In Time-Division Duplex System
    6.
    发明申请
    Base Station, Terminal, System And Method For Data Transmitting In Time-Division Duplex System 有权
    基站,终端,时分双工系统中数据传输的系统和方法

    公开(公告)号:US20140177491A1

    公开(公告)日:2014-06-26

    申请号:US14236164

    申请日:2011-12-21

    Inventor: Peng Hao Bo Dai Bin Yu

    Abstract: A base station, a terminal, a system and methods for performing data transmission in a Time Division Duplex (TDD) system are disclosed. One of the methods includes: the base station sending an uplink scheduling grant signaling to the terminal on a carrier m, and after receiving uplink data sent by the terminal through a Physical Uplink Shared Channel (PUSCH) on a carrier n, the base station sending an ACK/NACK feedback signaling corresponding to the PUSCH to the terminal on the carrier m; wherein, m≠n; a timing relationship between a subframe by which the base station sends the uplink scheduling grant signaling and/or the ACK/NACK feedback signaling and a subframe where the PUSCH is located is identical with a Hybrid Automatic Repeat Request (HARQ) timing relationship corresponding to an uplink/downlink configuration of the carrier m or the carrier n.

    Abstract translation: 公开了一种在时分双工(TDD)系统中执行数据传输的基站,终端,系统和方法。 方法之一包括:基站向载波m上的终端发送上行调度授权信令,在通过载波n上的物理上行链路共享信道(PUSCH)接收到终端发送的上行数据之后,基站发送 与载波m上的终端对应的PUSCH的ACK / NACK反馈信令; 其中,m≠n; 基站发送上行链路调度授权信令的子帧与/或ACK / NACK反馈信令的子帧与PUSCH所在的子帧之间的定时关系与对应于上行链路调度许可信令的混合自动重复请求(HARQ)定时关系相同 载波m或载波n的上行链路/下行链路配置。

    System and method for allocating sounding reference signal resource
    8.
    发明授权
    System and method for allocating sounding reference signal resource 有权
    用于分配探测参考信号资源的系统和方法

    公开(公告)号:US08718001B2

    公开(公告)日:2014-05-06

    申请号:US13497297

    申请日:2010-06-30

    CPC classification number: H04L1/0027 H04L5/0048 H04W72/042

    Abstract: A system and a method for allocating Sounding Reference Signal (SRS) resources are provided in the present invention, the method includes: an e-Node-B (eNB) allocating a SRS bandwidth with 4n Resource Blocks (RBs) to a terminal, and equally dividing a time domain sequence of a SRS into t portions in the SRS bandwidth; the eNB configuring a time domain RePetition Factor (RPF) used by the UE, and the eNB configuring the UE to use one or more cyclic shifts in L cyclic shifts for each UE; then the eNB notifying the UE of a value of the time domain RPF, a location of a used frequency comb and a used cyclic shift by signaling, wherein n is a positive integer; the RPF satisfies a following condition: 48 × n RPF can be exactly divided by 12; t is an integer by which 48 × n RPF can be exactly divided; and L≦t.

    Abstract translation: 本发明提供了一种用于分配探测参考信号(SRS)资源的系统和方法,该方法包括:向终端分配具有4n个资源块(RB)的SRS带宽的e-Node-B(eNB),以及 将SRS的时域序列等分成SRS带宽中的t个部分; 所述eNB配置所述UE使用的时域RePetition Factor(RPF),所述eNB配置所述UE对每个UE使用L个循环移位中的一个或多个循环移位; 然后eNB通过UE通知信令的时域RPF的值,所使用的频率梳的位置和使用的循环移位,其中n是正整数; RPF满足以下条件:48×n RPF可以精确地除以12; t是48×n RPF可以精确分割的整数; 和L≦̸ t。

    Methods for detecting and/or quantifying a concentration of specific bacterial molecules using bacterial biosensors
    9.
    发明授权
    Methods for detecting and/or quantifying a concentration of specific bacterial molecules using bacterial biosensors 失效
    使用细菌生物传感器检测和/或定量特异性细菌分子的浓度的方法

    公开(公告)号:US08679806B2

    公开(公告)日:2014-03-25

    申请号:US12176942

    申请日:2008-07-21

    Abstract: A real-time method employing a portable peptide-containing potentiometric biosensor, can directly detect and/or quantify bacterial spores. Two peptides for specific recognition of B. subtilis and B. anthracis Sterne may be immobilized by a polysiloxane monolayer immobilization (PMI) technique. The sensors translate the biological recognition event into a potential change by detecting, for example, B. subtilis spores in a concentration range of 0.08-7.3×104 CFU/ml. The sensing method exhibited highly selective recognition properties towards Bacillus subtilis spores over other kinds of spores. The selectivity coefficients of the sensors for other kinds of spores are in the range of 0-1.0×10−5. The biosensor method not only has the specificity to distinguish Bacillus subtilis spores in a mixture of B. subtilis and B. thuringiensis (thur.) Kurstaki spores, but also can discriminate between live and dead B. subtilis spores. Furthermore, the sensing method can distinguish a Bacillus subtilis 1A700 from other B. subtilis strain. Assay time may be as low as about 5 minutes for a single test. Rapid identification of B. anthracis Sterne and B. anthracis ΔAmes was also provided.

    Abstract translation: 采用便携式含肽电位生物传感器的实时方法可以直接检测和/或定量细菌孢子。 用于特异性识别枯草芽孢杆菌和炭疽芽孢杆菌的两种肽可以通过聚硅氧烷单层固定(PMI)技术来固定。 传感器通过检测例如浓度范围为0.08-7.3×104CFU / ml的枯草芽孢杆菌孢子将生物识别事件转化为潜在的变化。 该感测方法在其他种类的孢子上表现出对枯草芽孢杆菌孢子的高度选择性识别性能。 其他类型孢子传感器的选择性系数在0-1.0×10-5的范围内。 生物传感器方法不仅具有区分枯草芽孢杆菌和苏云金芽孢杆菌(Thur。)Kurstaki孢子的混合物中的枯草芽孢杆菌孢子的特异性,而且可以区分活枯枯病芽孢杆菌孢子和死枯病芽孢杆菌孢子。 此外,感测方法可以将枯草芽孢杆菌1A700与其他枯草芽孢杆菌菌株区分开。 单次测试的测定时间可能低至约5分钟。 还提供了炭疽杆菌和炭疽芽孢杆菌的快速鉴定。

    Double and triple gate MOSFET devices and methods for making same
    10.
    发明授权
    Double and triple gate MOSFET devices and methods for making same 有权
    双栅极和三栅极MOSFET器件及其制造方法

    公开(公告)号:US08580660B2

    公开(公告)日:2013-11-12

    申请号:US13523603

    申请日:2012-06-14

    CPC classification number: H01L29/785 H01L29/42384 H01L29/66795 H01L29/66818

    Abstract: A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a first gate, a second gate, and a third gate. The first gate is formed on top of the fin. The second gate is formed adjacent the fin. The third gate is formed adjacent the fin and opposite the second gate.

    Abstract translation: 双栅极金属氧化物半导体场效应晶体管(MOSFET)包括鳍状物,第一栅极和第二栅极。 第一个门形成在鳍的顶部。 第二个门围绕翅片和第一个门。 在另一实施方案中,三栅极MOSFET包括鳍片,第一栅极,第二栅极和第三栅极。 第一个门形成在鳍的顶部。 第二个门形成在翅片附近。 第三栅极形成在翅片附近并与第二栅极相对。

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