摘要:
A MEMS device comprises a proof mass suspended above a substrate, one or more driving combs, and one or more sensing combs. During operation, a DC actuating potential in series with an AC modulation potential is applied to the proof mass, and an AC actuating potential is applied to the one or more driving combs such that the proof mass moves in an oscillatory manner. An inertial sensing system further comprises a sensing element configured to detect a rotation information coupled with an AC signal and an acceleration information coupled with a DC signal.
摘要:
A MEMS device comprises a proof mass suspended above a substrate, one or more driving combs, and one or more sensing combs. During operation, a DC actuating potential in series with an AC modulation potential is applied to the proof mass, and an AC actuating potential is applied to the one or more driving combs such that the proof mass moves in an oscillatory manner. An inertial sensing system further comprises a sensing element configured to detect a rotation information coupled with an AC signal and an acceleration information coupled with a DC signal.
摘要:
The invention provides an organosilicon amine electrolyte material containing a polyether chain, which has a wide range of applications, as well as an application of the electrolyte material in a lithium ion battery. The chemical structure thereof is as shown in Formula 1, wherein R1 and R2 are selected from the same or different C1-C10 alkyls; A is a polyether chain segment having the structure of (CH2)nO[(CH2)mO]x(CH2)y, where n and m are integers from 0 to 10, and x is an integer from 1 to 10; R3, R4 and R5 are selected from the same or the different C1-C10 alkyls or alkoxyl groups, or are equivalent to ANR1R2 or —O—SiR6R7R8 in structure; wherein R6, R7 and R8 are C1-C10 alkyls.
摘要:
A fabrication process for a device such as a backplane for a flat panel display includes depositing thin film layers on a substrate, forming a 3D template overlying the thin film layers, and etching the 3D template and the thin film layers to form gate lines and transistors from the thin film layers. An insulating or passivation layer can then be deposited on the gate lines and the transistors, so that column or data lines can be formed on the insulating layer.
摘要:
A method to quantify a plurality of digital data sharing in a multi-threaded execution includes the steps of: providing at least one processor; providing a computer readable non-transitory storage medium including a computer readable multi-threaded executable code and a computer readable executable code to calculate a plurality of shared footprint values and an average shared footprint value; running the multi-threaded executable code on the at least one computer processor; running the computer readable executable code configured to calculate a plurality of shared footprint values and an average shared footprint value; calculating a plurality of shared footprint values by use of a linear-time process for a corresponding plurality of executable windows in time; and calculating and saving an average shared footprint value based on the plurality of shared footprint values to quantify by a metric the data sharing by the multi-threaded execution. A system to perform the method is also described.
摘要:
An electronic apparatus is provided that includes a number of first components on a first substrate and a number of second components on a second substrate. A lamination material that includes a conducting material is placed between the first components and the second components. Any one first component can couple to a varied subset of second components.
摘要:
An electronic apparatus is provided that includes a number of first components on a first substrate and a number of second components on a second substrate. A lamination material that includes a conducting material is placed between the first components and the second components. Any one first component can couple to a varied subset of second components.
摘要:
A fabrication process for a device such as a backplane for a flat panel display includes depositing thin film layers on a substrate, forming a 3D template overlying the thin film layers, and etching the 3D template and the thin film layers to form gate lines and transistors from the thin film layers. An insulating or passivation layer can then be deposited on the gate lines and the transistors, so that column or data lines can be formed on the insulating layer.
摘要:
A thin-film logic circuit, which can be fabricated entirely of TFTs of the same conductivity type, includes a logic stage connected to a supply voltage and a level shifter connected to a wider voltage range provided by the supply voltage and ground. The logic circuit produces output signals with full rail-to-rail signal range from ground to the supply voltage and can implement or include a basic logic component such as an inverter, a NAND gate, or a NOR gate or more complicated circuits in which many basic logic components are cascaded together. Such logic circuits can be fabricated directly on flexible structures or large areas such as in flat panel displays.