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1.发明授权公开(公告)号：US10361292B2
公开(公告)日：2019-07-23
申请号：US15898457
申请日：2018-02-17
发明人： Dmitri E. Nikonov , Christian Binek , Xia Hong , Jonathan P. Bird , Kang L. Wang , Peter A. Dowben
IPC分类号： G11C11/00 , H01L29/66 , H01L29/24 , G11C11/16 , G11C11/18 , G11C11/14 , G11C11/22 , H01F10/32 , H03K19/16 , B82Y10/00 , H01L29/423 , H01L29/08
摘要： Antiferromagnetic magneto-electric spin-orbit read (AFSOR) logic devices are presented. The devices include a voltage-controlled magnetoelectric (ME) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin-orbit coupling (SOC) material on the ME layer. One or more sources and one or more drains, each optionally formed of ferromagnetic material, are provided on the SOC material.
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公开(公告)号：US11233192B1
公开(公告)日：2022-01-25
申请号：US16988085
申请日：2020-08-07
摘要： A hall bar device for a memory or logic application can include a gate electrode, a boron-doped chromia layer on the gate electrode; and a hall bar structure with four legs on the boron-doped chromia layer. For a memory application, the hall bar device can be written to by applying a pulse voltage across the gate electrode and one leg of the hall bar structure in the absence of an applied magnetic field; and can be read from by measuring a voltage across the one leg of the hall bar structure and its opposite leg.
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公开(公告)号：US09718700B2
公开(公告)日：2017-08-01
申请号：US14629178
申请日：2015-02-23
发明人： Christian Binek , Peter Dowben , Kirill Belashchenko , Aleksander Wysocki , Sai Mu , Mike Street
CPC分类号： C01G37/027 , C01P2002/50 , C01P2002/72 , H01F1/0009 , H01F10/002 , H01F10/3268 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetoelectric composition of boron and chromia is provided. The boron and chromia alloy can contain boron doping of 1%-10% in place of the oxygen in the chromia. The boron-doped chromia exhibits an increased critical temperature while maintaining magnetoelectric characteristics. The composition can be fabricated by depositing chromia in the presence of borane. The boron substitutes oxygen in the chromia, enhancing the exchange energy and thereby increasing Néel temperature.
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公开(公告)号：US09366460B2
公开(公告)日：2016-06-14
申请号：US13935176
申请日：2013-07-03
发明人： Christian Binek
CPC分类号： F25B21/00 , F25B2321/002 , F25B2321/0023 , Y02B30/66
摘要： A method for refrigeration through voltage-controlled entropy change includes applying a voltage signal to a piezoelectric material to generate strain in the piezoelectric material, generating strain in a magnetic material attached to the piezoelectric material, and generating a change in a temperature of the magnetic material in response to the strain in the magnetic material.
摘要翻译： 一种通过电压控制熵变的制冷方法包括对压电材料施加电压信号以在压电材料中产生应变，在附着于压电材料的磁性材料中产生应变，并产生磁性材料的温度变化 响应于磁性材料中的应变。
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公开(公告)号：US20140007592A1
公开(公告)日：2014-01-09
申请号：US13935176
申请日：2013-07-03
发明人： Christian Binek
IPC分类号： F25B21/00
CPC分类号： F25B21/00 , F25B2321/002 , F25B2321/0023 , Y02B30/66
摘要： A method for refrigeration through voltage-controlled entropy change includes applying a voltage signal to a piezoelectric material to generate strain in the piezoelectric material, generating strain in a magnetic material attached to the piezoelectric material, and generating a change in a temperature of the magnetic material in response to the strain in the magnetic material.
摘要翻译： 一种通过电压控制熵变的制冷方法包括对压电材料施加电压信号以在压电材料中产生应变，在附着于压电材料的磁性材料中产生应变，并产生磁性材料的温度变化 响应于磁性材料中的应变。
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