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公开(公告)号：US20080185649A1
公开(公告)日：2008-08-07
申请号：US12099211
申请日：2008-04-08
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/785 , H01L21/845 , H01L27/1211 , H01L29/66795
摘要： Disclosed is a tri-gate field effect transistor with a back gate and the associated methods of forming the transistor. Specifically, a back gate is incorporated into a lower portion of a fin. A tri-gate structure is formed on the fin and is electrically isolated from the back gate. The back gate can be used to control the threshold voltage of the FET. In one embodiment the back gate extends to an n-well in a p-type silicon substrate. A contact to the n-well allows electrical voltage to be applied to the back gate. A diode created between the n-well and p-substrate isolates the current flowing through the n-well from other devices on the substrate so that the back gate can be independently biased. In another embodiment the back gate extends to n-type polysilicon layer on an insulator layer on a p-type silicon substrate. A contact to the n-type polysilicon layer allows electrical voltage to be applied to the back gate. A trench isolation structure extending through the polysilicon layer to the insulator layer isolates current flowing through the polysilicon layer from other devices on the silicon substrate.
摘要翻译： 公开了具有背栅的三栅场效应晶体管和形成晶体管的相关方法。 具体地说，后门结合在翅片的下部。 三栅结构形成在翅片上并与后门电隔离。 背栅可用于控制FET的阈值电压。 在一个实施例中，背栅极延伸到p型硅衬底中的n阱。 与n阱的接触允许将电压施加到后门。 在n阱和p衬底之间产生的二极管将流过n阱的电流与衬底上的其他器件隔离，使得后栅极可以被独立地偏置。 在另一个实施例中，背栅极延伸到p型硅衬底上的绝缘体层上的n型多晶硅层。 与n型多晶硅层的接触允许电压施加到后门。 通过多晶硅层延伸到绝缘体层的沟槽隔离结构将流过多晶硅层的电流与硅衬底上的其它器件隔离。
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公开(公告)号：US07411252B2
公开(公告)日：2008-08-12
申请号：US11160361
申请日：2005-06-21
IPC分类号： H01L23/62
CPC分类号： H01L29/785 , H01L21/845 , H01L27/1211 , H01L29/66795
摘要： Disclosed is a tri-gate field effect transistor with a back gate and the associated methods of forming the transistor. Specifically, a back gate is incorporated into a lower portion of a fin. A tri-gate structure is formed on the fin and is electrically isolated from the back gate. The back gate can be used to control the threshold voltage of the FET. In one embodiment the back gate extends to an n-well in a p-type silicon substrate. A contact to the n-well allows electrical voltage to be applied to the back gate. A diode created between the n-well and p-substrate isolates the current flowing through the n-well from other devices on the substrate so that the back gate can be independently biased. In another embodiment the back gate extends to n-type polysilicon layer on an insulator layer on a p-type silicon substrate. A contact to the n-type polysilicon layer allows electrical voltage to be applied to the back gate. A trench isolation structure extending through the polysilicon layer to the insulator layer isolates current flowing through the polysilicon layer from other devices on the silicon substrate.
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公开(公告)号：US07888743B2
公开(公告)日：2011-02-15
申请号：US12099211
申请日：2008-04-08
IPC分类号： H01L23/62
CPC分类号： H01L29/785 , H01L21/845 , H01L27/1211 , H01L29/66795
摘要： Disclosed is a tri-gate field effect transistor with a back gate and the associated methods of forming the transistor. Specifically, a back gate is incorporated into a lower portion of a fin. A tri-gate structure is formed on the fin and is electrically isolated from the back gate. The back gate can be used to control the threshold voltage of the FET. In one embodiment the back gate extends to an n-well in a p-type silicon substrate. A contact to the n-well allows electrical voltage to be applied to the back gate. A diode created between the n-well and p-substrate isolates the current flowing through the n-well from other devices on the substrate so that the back gate can be independently biased. In another embodiment the back gate extends to n-type polysilicon layer on an insulator layer on a p-type silicon substrate. A contact to the n-type polysilicon layer allows electrical voltage to be applied to the back gate. A trench isolation structure extending through the polysilicon layer to the insulator layer isolates current flowing through the polysilicon layer from other devices on the silicon substrate.
摘要翻译： 公开了具有背栅的三栅场效应晶体管和形成晶体管的相关方法。 具体地说，后门结合在翅片的下部。 三栅结构形成在翅片上并与后门电隔离。 背栅可用于控制FET的阈值电压。 在一个实施例中，背栅极延伸到p型硅衬底中的n阱。 与n阱的接触允许将电压施加到后门。 在n阱和p衬底之间产生的二极管将流过n阱的电流与衬底上的其他器件隔离，使得后栅极可以被独立地偏置。 在另一个实施例中，背栅极延伸到p型硅衬底上的绝缘体层上的n型多晶硅层。 与n型多晶硅层的接触允许电压施加到后门。 通过多晶硅层延伸到绝缘体层的沟槽隔离结构将流过多晶硅层的电流与硅衬底上的其它器件隔离。
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公开(公告)号：US07700446B2
公开(公告)日：2010-04-20
申请号：US11830868
申请日：2007-07-31
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L29/42384 , H01L29/66795 , H01L29/78615 , H01L29/78687
摘要： A field effect transistor (FET) and method of forming the FET comprises a substrate; a silicon germanium (SiGe) layer over the substrate; a semiconductor layer over and adjacent to the SiGe layer; an insulating layer adjacent to the substrate, the SiGe layer, and the semiconductor layer; a pair of first gate structures adjacent to the insulating layer; and a second gate structure over the insulating layer. Preferably, the insulating layer is adjacent to a side surface of the SiGe layer and an upper surface of the semiconductor layer, a lower surface of the semiconductor layer, and a side surface of the semiconductor layer. Preferably, the SiGe layer comprises carbon. Preferably, the pair of first gate structures are substantially transverse to the second gate structure. Additionally, the pair of first gate structures are preferably encapsulated by the insulating layer.
摘要翻译： 场效应晶体管（FET）和形成FET的方法包括：衬底; 衬底上的硅锗（SiGe）层; 在SiGe层上并邻近SiGe层的半导体层; 与衬底相邻的绝缘层，SiGe层和半导体层; 邻近绝缘层的一对第一栅极结构; 以及绝缘层上的第二栅极结构。 优选地，绝缘层与SiGe层的侧表面，半导体层的上表面，半导体层的下表面和半导体层的侧表面相邻。 优选地，SiGe层包含碳。 优选地，该对第一栅极结构基本上横向于第二栅极结构。 此外，该对第一栅极结构优选地被绝缘层封装。
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公开(公告)号：US20080176363A1
公开(公告)日：2008-07-24
申请号：US11830868
申请日：2007-07-31
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L29/42384 , H01L29/66795 , H01L29/78615 , H01L29/78687
摘要： A field effect transistor (FET) and method of forming the FET comprises a substrate; a silicon germanium (SiGe) layer over the substrate; a semiconductor layer over and adjacent to the SiGe layer; an insulating layer adjacent to the substrate, the SiGe layer, and the semiconductor layer; a pair of first gate structures adjacent to the insulating layer; and a second gate structure over the insulating layer. Preferably, the insulating layer is adjacent to a side surface of the SiGe layer and an upper surface of the semiconductor layer, a lower surface of the semiconductor layer, and a side surface of the semiconductor layer. Preferably, the SiGe layer comprises carbon. Preferably, the pair of first gate structures are substantially transverse to the second gate structure. Additionally, the pair of first gate structures are preferably encapsulated by the insulating layer.
摘要翻译： 场效应晶体管（FET）和形成FET的方法包括：衬底; 衬底上的硅锗（SiGe）层; 在SiGe层上并邻近SiGe层的半导体层; 与衬底相邻的绝缘层，SiGe层和半导体层; 邻近绝缘层的一对第一栅极结构; 以及绝缘层上的第二栅极结构。 优选地，绝缘层与SiGe层的侧表面，半导体层的上表面，半导体层的下表面和半导体层的侧表面相邻。 优选地，SiGe层包含碳。 优选地，该对第一栅极结构基本上横向于第二栅极结构。 此外，该对第一栅极结构优选地被绝缘层封装。
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公开(公告)号：US07288802B2
公开(公告)日：2007-10-30
申请号：US11161213
申请日：2005-07-27
IPC分类号： H01L31/00
CPC分类号： H01L29/785 , H01L29/42384 , H01L29/66795 , H01L29/78615 , H01L29/78687
摘要： A field effect transistor (FET) and method of forming the FET comprises a substrate; a silicon germanium (SiGe) layer over the substrate; a semiconductor layer over and adjacent to the SiGe layer; an insulating layer adjacent to the substrate, the SiGe layer, and the semiconductor layer; a pair of first gate structures adjacent to the insulating layer; and a second gate structure over the insulating layer. Preferably, the insulating layer is adjacent to a side surface of the SiGe layer and an upper surface of the semiconductor layer, a lower surface of the semiconductor layer, and a side surface of the semiconductor layer. Preferably, the SiGe layer comprises carbon. Preferably, the pair of first gate structures are substantially transverse to the second gate structure. Additionally, the pair of first gate structures are preferably encapsulated by the insulating layer.
摘要翻译： 场效应晶体管（FET）和形成FET的方法包括：衬底; 衬底上的硅锗（SiGe）层; 在SiGe层上并邻近SiGe层的半导体层; 与衬底相邻的绝缘层，SiGe层和半导体层; 邻近绝缘层的一对第一栅极结构; 以及绝缘层上的第二栅极结构。 优选地，绝缘层与SiGe层的侧表面，半导体层的上表面，半导体层的下表面和半导体层的侧表面相邻。 优选地，SiGe层包含碳。 优选地，该对第一栅极结构基本上横向于第二栅极结构。 此外，该对第一栅极结构优选地被绝缘层封装。
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公开(公告)号：US07691684B2
公开(公告)日：2010-04-06
申请号：US12183169
申请日：2008-07-31
IPC分类号： H01L21/82
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method of forming an antifuse forms a material layer and then patterns the material layer into a fin. The center portion of the fin is converted into a substantially non-conductive region and the end portions of the fin into conductors. The process of converting the center portion of the fin into an insulator allows a process of heating the fin above a predetermined temperature to convert the insulator into a conductor. Thus, the fin-type structure that can be selectively converted from an insulator into a permanent conductor using a heating process.
摘要翻译： 形成反熔丝的方法形成材料层，然后将材料层图案化成翅片。 翅片的中心部分被转换成基本上不导电的区域，并且翅片的端部变成导体。 将翅片的中心部分转换成绝缘体的过程允许将翅片加热到高于预定温度的过程，以将绝缘体转换为导体。 因此，可以使用加热工艺从绝缘体选择性地转换成永久导体的鳍式结构。
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公开(公告)号：US20080286905A1
公开(公告)日：2008-11-20
申请号：US12183169
申请日：2008-07-31
IPC分类号： H01L21/266
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method of forming an antifuse forms a material layer and then patterns the material layer into a fin. The center portion of the fin is converted into a substantially non-conductive region and the end portions of the fin into conductors. The process of converting the center portion of the fin into an insulator allows a process of heating the fin above a predetermined temperature to convert the insulator into a conductor. Thus, the fin-type structure that can be selectively converted from an insulator into a permanent conductor using a heating process.
摘要翻译： 形成反熔丝的方法形成材料层，然后将材料层图案化成翅片。 翅片的中心部分被转换成基本上不导电的区域，并且翅片的端部变成导体。 将翅片的中心部分转换成绝缘体的过程允许将翅片加热到高于预定温度的过程，以将绝缘体转换为导体。 因此，可以使用加热工艺从绝缘体选择性地转换成永久导体的鳍式结构。
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9.发明授权Semiconductor devices having tensile and/or compressive stress and methods of manufacturing 有权具有拉伸和/或压缩应力的半导体器件和制造方法公开(公告)号：US09368410B2
公开(公告)日：2016-06-14
申请号：US12033280
申请日：2008-02-19
IPC分类号： H01L29/78 , H01L21/762 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/76205 , H01L21/823878 , H01L29/7846
摘要： A semiconductor device and method of manufacturing is disclosed which has a tensile and/or compressive strain applied thereto. The method includes forming at least one trench in a material; and filling the at least one trench by an oxidation process thereby forming a strain concentration in a channel of a device. The structure includes a gate structure having a channel and a first oxidized trench on a first of the channel, respectively. The first oxidized trench creates a strain component in the channel to increase device performance.
摘要翻译： 公开了一种半导体器件和制造方法，其具有施加到其上的拉伸和/或压缩应变。 该方法包括在材料中形成至少一个沟槽; 以及通过氧化工艺填充所述至少一个沟槽，从而在器件的通道中形成应变集中。 该结构包括分别在第一通道上具有沟道和第一氧化沟槽的栅极结构。 第一氧化沟槽在通道中产生应变分量以增加器件性能。
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公开(公告)号：US08617412B2
公开(公告)日：2013-12-31
申请号：US12966370
申请日：2010-12-13
CPC分类号： B01D39/2082 , B01D2239/025 , B01D2239/0613 , B01D2239/10 , B01D2239/1233 , B82Y30/00
摘要： The disclosure relates generally to nano-filters and methods of forming same, and methods of filtration. The nano-filter includes a substrate and at least one nanowire structure located between an inlet and an outlet. The nanowire structure may include a plurality of vertically stacked horizontal nanowires.
摘要翻译： 本公开一般涉及纳米过滤器及其形成方法，以及过滤方法。 纳米过滤器包括基底和位于入口和出口之间的至少一个纳米线结构。 纳米线结构可以包括多个垂直堆叠的水平纳米线。
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