公开(公告)号：US20070105326A1

公开(公告)日：2007-05-10

申请号：US11164070

申请日：2005-11-09

申请人： Brent Anderson ,  Andres Bryant ,  Myung-hee Na ,  Edward Nowak

发明人： Brent Anderson ,  Andres Bryant ,  Myung-hee Na ,  Edward Nowak

IPC分类号： H01L21/336

CPC分类号： H01L29/78621 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/66772

摘要： An apparatus and method for manufacturing rotated field effect transistors. The method comprises providing a substrate including a first gate structure and a second gate structure, which are not parallel to each other. The method further includes performing a first ion implant substantially orthogonal to an edge of the first gate structure to form a first impurity region and performing a second ion implant at a direction different than that of the first ion implant and substantially orthogonal to an edge of the second gate structure to form a second impurity region under the edge of the second gate structure.

摘要翻译： 用于制造旋转场效应晶体管的装置和方法。 该方法包括提供包括彼此不平行的第一栅极结构和第二栅极结构的衬底。 该方法还包括执行基本上与第一栅极结构的边缘正交的第一离子注入以形成第一杂质区域，并且在不同于第一离子注入的方向上执行第二离子注入并且基本上垂直于第 第二栅极结构，以在第二栅极结构的边缘下方形成第二杂质区域。

公开(公告)号：US20080090361A1

公开(公告)日：2008-04-17

申请号：US11866435

申请日：2007-10-03

申请人： Brent Anderson ,  Andres Bryant ,  Jeffrey Johnson ,  Edward Nowak

发明人： Brent Anderson ,  Andres Bryant ,  Jeffrey Johnson ,  Edward Nowak

IPC分类号： H01L21/336

CPC分类号： H01L29/785 ,  H01L29/42384 ,  H01L29/66795

摘要： Disclosed are embodiments of a trigate field effect transistor that comprises a fin-shaped semiconductor body with a channel region and source/drain regions on either side of the channel region. Thick gate dielectric layers separate the top surface and opposing sidewalls of the channel region from the gate conductor in order to suppress conductivity in the channel planes. A thin gate dielectric layer separates the upper corners of the channel region from the gate conductor in order to optimize conductivity in the channel corners. To further emphasize the current flow in the channel corners, the source/drain regions can be formed in the upper corners of the semiconductor body alone. Alternatively, source/drain extension regions can be formed only in the upper corners of the semiconductor body adjacent to the gate conductor and deep source/drain diffusion regions can be formed in the ends of the semiconductor body.

摘要翻译： 公开了一种触发场效应晶体管的实施例，其包括具有沟道区的鳍状半导体本体和沟道区两侧的源极/漏极区。 厚栅电介质层将沟道区的顶表面和相对的侧壁与栅极导体分开，以便抑制沟道平面中的导电性。 薄栅极电介质层将沟道区的上角与栅极导体分开，以便优化沟道角中的导电性。 为了进一步强调通道角中的电流流动，源极/漏极区域可以单独形成在半导体主体的上角部。 或者，源极/漏极延伸区域仅可以形成在与栅极导体相邻的半导体本体的上角处，并且可以在半导体本体的端部形成深的源极/漏极扩散区域。

公开(公告)号：US20080036000A1

公开(公告)日：2008-02-14

申请号：US11876830

申请日：2007-10-23

申请人： Brent Anderson ,  Andres Bryant ,  Edward Nowak

发明人： Brent Anderson ,  Andres Bryant ,  Edward Nowak

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66772 ,  H01L29/665 ,  H01L29/78645 ,  H01L29/78648

摘要： A semiconductor structure and the associated method for fabricating the same. The semiconductor structure includes (a) a semiconductor substrate, (b) a back gate region on the semiconductor substrate, (c) a back gate dielectric region on the back gate region, (d) a semiconductor region on the back gate dielectric region comprising a channel region disposed between first and second source/drain (S/D) regions, (e) a main gate dielectric region on the semiconductor region, (f) a main gate region on the main gate dielectric region, (g) a first contact pad adjacent to the first S/D region and electrically insulated from the back gate region, and (h) a first buried dielectric region that physically and electrically isolates the first contact pad and the back gate region, and wherein the first buried dielectric region has a first thickness in the first direction at least 1.5 times a second thickness of the back gate region.

摘要翻译： 半导体结构及其制造方法。 半导体结构包括（a）半导体衬底，（b）半导体衬底上的背栅区，（c）背栅区上的背栅电介质区，（d）背栅电介质区上的半导体区，包括 设置在第一和第二源极/漏极（S / D）区域之间的沟道区域，（e）半导体区域上的主栅极电介质区域，（f）主栅极电介质区域上的主栅极区域，（g） 接触垫，其与所述第一S / D区相邻并且与所述背栅区电绝缘，以及（h）物理地和电隔离所述第一接触焊盘和所述背栅区的第一掩埋介电区，并且其中所述第一掩埋介电区 在第一方向上具有至少1.5倍于后栅极区域的第二厚度的第一厚度。

公开(公告)号：US20070187769A1

公开(公告)日：2007-08-16

申请号：US11276135

申请日：2006-02-15

申请人： Brent Anderson ,  Andres Bryant ,  William Clark ,  Edward Nowak

发明人： Brent Anderson ,  Andres Bryant ,  William Clark ,  Edward Nowak

IPC分类号： H01L21/337 ,  H01L29/94

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L27/11

摘要： Disclosed are embodiments of a structure that comprises a first device, having multiple FETs, and a second device, having at least one FET. Sections of a first portion of a semiconductor layer below the first device are doped and contacted to form back gates. A second portion of the semiconductor layer below the second device remains un-doped and un-contacted and, thus, functions as an insulator. Despite the performance degradation of the first device due to back gate capacitance, the back gates result in a net gain for devices such as, SRAM cells, which require precise Vt control. Contrarily, despite marginal Vt control in the second device due to the absence of back gates, the lack of capacitance loading and the added insulation result in a net gain for high performance devices such as, logic circuits.

摘要翻译： 公开了包括具有多个FET的第一器件和具有至少一个FET的第二器件的结构的实施例。 第一器件下方的半导体层的第一部分的部分被掺杂并接触以形成后栅极。 第二器件下方的半导体层的第二部分保持未掺杂和未接触，并因此用作绝缘体。 尽管由于背栅电容而导致第一器件的性能下降，但是后栅导致需要精确Vt控制的诸如SRAM单元的器件的净增益。 相反，尽管由于不存在后门而导致第二器件中的边缘Vt控制，但由于缺少电容负载和增加的绝缘，导致高性能器件（如逻辑电路）的净增益。

公开(公告)号：US20080083951A1

公开(公告)日：2008-04-10

申请号：US11869766

申请日：2007-10-10

申请人： Brent Anderson ,  Andres Bryant ,  Edward Nowak ,  Richard Williams

发明人： Brent Anderson ,  Andres Bryant ,  Edward Nowak ,  Richard Williams

IPC分类号： H01L27/12

CPC分类号： H01L29/78612 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78648

摘要： Embodiments of the invention disclose a design structure for a FET with a shallow source/drain region, a deep channel region, a gate stack and a back gate that is surrounded by dielectric. The FET structure also includes halo or pocket implants that extend through the entire depth of the channel region. Because a portion of the halo and well doping of the channel is deeper than the source/drain depth, better threshold voltage and process control is achieved. A back-gated FET structure is also provided having a first dielectric layer in this structure that runs under the shallow source/drain region between the channel region and the back gate. This first dielectric layer extends from under the source/drain regions on either side of the back gate and is in contact with a second dielectric such that the back gate is bounded on each side or isolated by dielectric.

摘要翻译： 本发明的实施例公开了具有浅电源/漏极区域，深沟道区域，栅极叠层和被电介质包围的背栅的FET的设计结构。 FET结构还包括延伸通过通道区域的整个深度的晕或凹坑植入物。 因为沟道的一部分光晕和阱掺杂比源极/漏极深度更深，所以实现了更好的阈值电压和过程控制。 还提供了后栅化FET结构，其具有在该结构中的第一介电层，其在沟道区域和后栅极之间的浅源极/漏极区域下方延伸。 该第一电介质层从背栅的两侧的源极/漏极区下方延伸并与第二电介质接触，使得后栅极在每一侧上界定或通过电介质隔离。

公开(公告)号：US20070231987A1

公开(公告)日：2007-10-04

申请号：US11761438

申请日：2007-06-12

申请人： Brent Anderson ,  Andres Bryant ,  Edward Nowak

发明人： Brent Anderson ,  Andres Bryant ,  Edward Nowak

IPC分类号： H01L21/336

CPC分类号： H01L29/785 ,  H01L27/1203 ,  H01L29/66795

摘要： A fin-type field effect transistor (FinFET) has a fin having a center channel portion, end portions comprising source and drain regions, and channel extensions extending from sidewalls of the channel portion of the fin. The structure also includes a gate insulator covering the channel portion and the channel extensions, and a gate conductor on the gate insulator. The channel extensions increase capacitance of the channel portion of the fin.

摘要翻译： 翅片型场效应晶体管（FinFET）具有鳍状物，其具有中心沟道部分，端部包括源极和漏极区域以及从鳍片的沟道部分的侧壁延伸的沟道延伸部。 该结构还包括覆盖沟道部分和沟道延伸部的栅极绝缘体以及栅极绝缘体上的栅极导体。 通道扩展增加了鳍片的通道部分的电容。

公开(公告)号：US20070122957A1

公开(公告)日：2007-05-31

申请号：US11164651

申请日：2005-11-30

申请人： Brent Anderson ,  Andres Bryant ,  William Clark ,  Jeffrey Gambino ,  Shih-Fen Huang ,  Edward Nowak ,  Anthony Stamper

发明人： Brent Anderson ,  Andres Bryant ,  William Clark ,  Jeffrey Gambino ,  Shih-Fen Huang ,  Edward Nowak ,  Anthony Stamper

IPC分类号： H01L21/8234 ,  H01L29/76 ,  H01L21/336

CPC分类号： H01L21/823412 ,  H01L21/823418 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/78

摘要： In order to reduce power dissipation requirements, obtain full potential transistor performance and avoid power dissipation limitations on transistor performance in high density integrated circuits, transistors are operated in a sub-threshold (sub-Vth) or a near sub-Vth voltage regime (generally about 0.2 volts rather than a super-Vth regime of about 1.2 volts or higher) and optimized for such operation, particularly through simplification of the transistor structure, since intrinsic channel resistance is dominant in sub-Vth operating voltage regimes. Such simplifications include an underlap or recess of the source and drain regions from the gate which avoids overlap capacitance to partially recover loss of switching speed otherwise caused by low voltage operation, an ultra-thin gate structure having a thickness of 500 Å or less which also simplifies forming connections to the transistor and an avoidance of silicidation or alloy formation in the source, drain and/or gate of transistors.

摘要翻译： 为了降低功耗要求，获得全电位晶体管性能并避免在高密度集成电路中对晶体管性能的功率限制，晶体管以子阈值（sub-V thth th）或 接近次级V th电压方式（通常约为0.2伏，而不是大于1.2伏特或更高的超V 2），并且针对这种操作进行了优化，特别是通过简化 的晶体管结构，因为固有沟道电阻在次级V 3工作电压方面是主要的。 这种简化包括来自栅极的源极和漏极区域的欠叠或凹陷，其避免重叠电容以部分恢复由低电压操作引起的切换速度的损失，厚度为或等于或小于500埃的超薄栅极结构 简化了与晶体管的形成连接，避免了晶体管的源极，漏极和/或栅极中的硅化或合金形成。

公开(公告)号：US20060231873A1

公开(公告)日：2006-10-19

申请号：US10907745

申请日：2005-04-14

申请人： Brent Anderson ,  Andres Bryant ,  Edward Nowak

发明人： Brent Anderson ,  Andres Bryant ,  Edward Nowak

IPC分类号： H01L29/78 ,  H01L21/84

CPC分类号： H01L29/66772 ,  H01L29/665 ,  H01L29/78645 ,  H01L29/78648

摘要： A semiconductor structure and the associated method for fabricating the same. The semiconductor structure includes (a) a semiconductor substrate, (b) a back gate region on the semiconductor substrate, (c) a back gate dielectric region on the back gate region, (d) a semiconductor region on the back gate dielectric region comprising a channel region disposed between first and second source/drain (S/D) regions, (e) a main gate dielectric region on the semiconductor region, (f) a main gate region on the main gate dielectric region, (g) a first contact pad adjacent to the first S/D region and electrically insulated from the back gate region, and (h) a first buried dielectric region that physically and electrically isolates the first contact pad and the back gate region, and wherein the first buried dielectric region has a first thickness in the first direction at least 1.5 times a second thickness of the back gate region.

摘要翻译： 半导体结构及其制造方法。 半导体结构包括（a）半导体衬底，（b）半导体衬底上的背栅区，（c）背栅区上的背栅电介质区，（d）背栅电介质区上的半导体区，包括 设置在第一和第二源极/漏极（S / D）区域之间的沟道区域，（e）半导体区域上的主栅极电介质区域，（f）主栅极电介质区域上的主栅极区域，（g） 接触垫，其与所述第一S / D区相邻并且与所述背栅区电绝缘，以及（h）物理地和电隔离所述第一接触焊盘和所述背栅区的第一掩埋介电区，并且其中所述第一掩埋介电区 在第一方向上具有至少1.5倍于后栅极区域的第二厚度的第一厚度。

公开(公告)号：US20070249130A1

公开(公告)日：2007-10-25

申请号：US11379581

申请日：2006-04-21

申请人： Brent Anderson ,  Andres Bryant ,  Edward Nowak

发明人： Brent Anderson ,  Andres Bryant ,  Edward Nowak

IPC分类号： H01L21/336

CPC分类号： H01L21/324 ,  H01L21/26586 ,  H01L29/66795 ,  H01L29/7843 ,  H01L29/7851

摘要： Disclosed are embodiments a technique for inducing strain into the polysilicon gate of a non-planar FET (e.g., a finFET or trigate FET) in order to impart a similar strain on the FET channel region, while simultaneously protecting the source/drain regions of the semiconductor fin. Specifically, a protective cap layer is formed above the source/drain regions of the fin in order to protect those regions during a subsequent amporphization ion implantation process. The fin is further protected, during this implantation process, because the ion beam is directed towards the gate in a plane that is parallel to the fin and tilted from the vertical axis. Thus, amorphization of the fin and damage to the fin are limited. Following the implantation process and the formation of a straining layer, a recrystallization anneal is performed so that the strain of the straining layer is ‘memorized’ in the polysilicon gate.

摘要翻译： 公开了一种用于在非平面FET（例如，finFET或触发FET）的多晶硅栅极中诱导应变的技术，以便在FET沟道区上施加类似的应变，同时保护FET的源极/漏极区域 半导体鳍片 具体地，在翅片的源极/漏极区域之上形成保护盖层，以便在随后的悬空离子注入工艺期间保护这些区域。 在该植入过程期间，翅片被进一步保护，因为离子束在平行于翅片并从垂直轴倾斜的平面中朝向栅极。 因此，翅片的非晶化和鳍的损害是有限的。 在注入工艺和形成应变层之后，进行再结晶退火，使得应变层的应变“存储在多晶硅栅极中”。

公开(公告)号：US20070188195A1

公开(公告)日：2007-08-16

申请号：US11276169

申请日：2006-02-16

申请人： Brent Anderson ,  Andres Bryant ,  Edward Nowak

发明人： Brent Anderson ,  Andres Bryant ,  Edward Nowak

IPC分类号： H03K19/0175

CPC分类号： H03K19/0013 ,  H03K19/018521

摘要： A system and method for providing a driver for a multi-voltage island/core architecture of an integrated circuit chip are provided. A complementary metal oxide semiconductor (CMOS) inverter is built with a high threshold voltage p-channel field-effect transistor (hi-Vt PFET) and a regular threshold voltage n-channel field-effect transistor (NFET), which uses the maximum positive voltage supply (Vdd) on the chip. The threshold voltage of the hi-Vt PFET is determined based on the maximum Vdd, the Vdd of the Voltage island/core that drives the CMOS inverter, and a subthreshold leakage current requirement of the hi-Vt PFET.

摘要翻译： 提供了一种用于提供用于集成电路芯片的多电压岛/核心架构的驱动器的系统和方法。 互补金属氧化物半导体（CMOS）逆变器由高阈值电压p沟道场效应晶体管（hi-Vt PFET）和规则阈值电压n沟道场效应晶体管（NFET）构成，其使用最大正值 电源（Vdd）在芯片上。 基于最大Vdd，驱动CMOS反相器的电压岛/芯的Vdd和hi-Vt PFET的亚阈值泄漏电流要求来确定hi-Vt PFET的阈值电压。