公开(公告)号：US5720821A

公开(公告)日：1998-02-24

申请号：US559412

申请日：1995-11-15

Applicant: Bret Halpern

Inventor： Bret Halpern

IPC: C23C14/06 ,  C23C14/22 ,  C23C14/00

CPC classification number: C23C14/228 ,  C23C14/06 ,  C23C14/22

Abstract: A host-guest jet vapor deposition system uses sonic jets and moving substrates to produce host-guest films in which complex organic molecules are trapped in hard, inorganic hosts. The system is capable of film fabrication at high rate and room temperature. Guest molecule concentrations are large and film quality is excellent. Films made in accordance with the present invention have applications in optics and electronics.

Abstract translation: 主客体喷气蒸气沉积系统使用声波喷射和移动的基底以产生主复合膜，其中复合有机分子被捕获在硬的无机主体中。 该系统能够以高速率和室温制膜。 游客分子浓度大，膜质优良。 根据本发明制成的膜在光学和电子学中具有应用。

公开(公告)号：US6148764A

公开(公告)日：2000-11-21

申请号：US222116

申请日：1998-12-29

Applicant: Guang-Ji Cui ,  Takashi Tamagawa ,  Bret Halpern

Inventor： Guang-Ji Cui ,  Takashi Tamagawa ,  Bret Halpern

IPC: C23C16/34 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/4551 ,  C23C16/345 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45576 ,  C23C16/45578

Abstract: Introducing a silane reactant gas into a Jet Vapor Deposition microwave discharge source for deposition of silicon nitride films at increased rate. An array of regularly spaced micro-inlets in a JVD microwave discharge source delivers the silane reactant gas and act as non-interfering silane injectors to give a rate increase proportional to the number of micro-inlets while preserving deposited film quality.

Abstract translation: 将硅烷反应气体引入到喷射气相沉积微波放电源中，用于以增加的速率沉积氮化硅膜。 在JVD微波放电源中的规则间隔的微入口阵列提供硅烷反应气体，并作为非干涉硅烷注射器，以提供与微入口数成比例的速率增加，同时保持沉积的膜质量。

公开(公告)号：US5650197A

公开(公告)日：1997-07-22

申请号：US538967

申请日：1995-10-05

Applicant: Bret Halpern

Inventor： Bret Halpern

IPC: C23C14/06 ,  C23C14/22 ,  C23C16/00 ,  C23C14/00

CPC classification number: C23C14/228 ,  C23C14/06 ,  C23C14/22

Abstract: A host-guest jet vapor deposition system uses sonic jets and moving substrates to produce host-guest films in which complex organic molecules are trapped in hard, inorganic hosts. The system is capable of film fabrication at high rate and room temperature. Guest molecule concentrations are large and film quality is excellent. Films made in accordance with the present invention have applications in optics and electronics.

Abstract translation: 主客体喷气蒸气沉积系统使用声波喷射和移动的基底以产生主复合膜，其中复合有机分子被捕获在硬的无机主体中。 该系统能够以高速率和室温制膜。 游客分子浓度大，膜质优良。 根据本发明制成的膜在光学和电子学中具有应用。

公开(公告)号：US6165554A

公开(公告)日：2000-12-26

申请号：US189927

申请日：1998-11-12

Applicant: Bret Halpern ,  Raymond F. Graves

Inventor： Bret Halpern ,  Raymond F. Graves

IPC: B05D1/02 ,  B05D7/24 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/455 ,  C23C16/00

CPC classification number: C23C16/4551 ,  B05D1/02 ,  B05D1/60 ,  C23C16/4481 ,  C23C16/452

Abstract: A method is presented for the vapor deposition of a material film upon a substrate. The method comprises the use of a Jet Vapor Deposition process with a vaporized polymer gas flowing at supersonic velocity. The vaporized polymer gas consists of a carrier gas and a vaporized polymer, such as Parylene. The vaporized polymer gas impinges upon the substrate through a port and forms the material film.

Abstract translation: 提出了一种用于在基材上气相沉积材料膜的方法。 该方法包括使用具有以超音速流动的气化聚合物气体的喷射气相沉积方法。 蒸发的聚合物气体由载气和蒸发的聚合物如Parylene组成。 蒸发的聚合物气体通过端口撞击在基底上并形成材料膜。

公开(公告)号：US5571332A

公开(公告)日：1996-11-05

申请号：US386705

申请日：1995-02-10

Applicant: Bret Halpern

Inventor： Bret Halpern

IPC: C23C14/22 ,  C23C14/32 ,  H01J37/305 ,  C23C16/00

CPC classification number: C23C14/228 ,  C23C14/22 ,  C23C14/32 ,  H01J37/3053 ,  H01J2237/3132

Abstract: A gas jet film deposition system includes a source of thermionically emitted electrons which are accelerated through carrier gas and generate He ions by impact ionization. The resultant electron avalanching and multiplication generates an extremely dense plasma, and produces large electron currents. The electron current is collected at a free, high electric field end of a crucible. The present system can generate vaporized evaporant which is entrained in the gas jet and thereby provide a high density source of ions. The ions may be presented to a substrate together with or without the evaporant.

Abstract translation: 气体喷射膜沉积系统包括通过载气加速并通过冲击电离产生He离子的热离子发射电子源。 产生的电子雪崩和相乘产生非常致密的等离子体，并产生大的电子电流。 在坩埚的自由，高电场端收集电子电流。 本发明的系统可以产生汽化的蒸气，其被夹带在气体射流中，从而提供高密度的离子源。 离子可以与蒸发剂一起或不与蒸发器一起呈现给基底。