摘要:
Problematic open areas are identified in a semiconductor wafer layout. The problematic open areas have a size variation relative to one or more neighboring open areas of the layout sufficient to cause adverse microloading variation. In one embodiment, the adverse microloading variation is controlled by shifting a number of layout features to interdict the problematic open areas. In another embodiment, the adverse microloading variation is controlled by defining and placing a number of dummy layout features to shield actual layout features that neighbor the problematic open areas. In another embodiment, the adverse microloading variation is controlled by utilizing sacrificial layout features which are actually fabricated on the wafer temporarily to eliminate microloading variation, and which are subsequently removed from the wafer to leave behind the desired permanent structures.
摘要:
Regular layout shapes are placed in accordance with a virtual grate. A determination is made as to whether an unoccupied layout space adjacent to a regular layout shape to be reinforced, and extending in a direction perpendicular to the regular layout shape, is large enough to support placement of a sub-resolution shape. Upon determining that the unoccupied layout space is large enough to support placement of the sub-resolution shape, the sub-resolution shape is placed so as to be substantially centered upon a virtual line of the virtual grate within the unoccupied layout space. Also, one or more sub-resolution shapes are placed between and parallel with neighboring regular layout shapes when windows of lithographic reinforcement associated with each of the neighboring regular layout shapes permit. The sub-resolution shapes may be placed according to a virtual grate, or may be placed based on proximity to edges of the neighboring regular layout shapes.
摘要:
Regular layout shapes are placed in accordance with a virtual grate. A determination is made as to whether an unoccupied layout space adjacent to a regular layout shape to be reinforced, and extending in a direction perpendicular to the regular layout shape, is large enough to support placement of a sub-resolution shape. Upon determining that the unoccupied layout space is large enough to support placement of the sub-resolution shape, the sub-resolution shape is placed so as to be substantially centered upon a virtual line of the virtual grate within the unoccupied layout space. Also, one or more sub-resolution shapes are placed between and parallel with neighboring regular layout shapes when windows of lithographic reinforcement associated with each of the neighboring regular layout shapes permit. The sub-resolution shapes may be placed according to a virtual grate, or may be placed based on proximity to edges of the neighboring regular layout shapes.
摘要:
Problematic open areas are identified in a semiconductor wafer layout. The problematic open areas have a size variation relative to one or more neighboring open areas of the layout sufficient to cause adverse microloading variation. In one embodiment, the adverse microloading variation is controlled by shifting a number of layout features to interdict the problematic open areas. In another embodiment, the adverse microloading variation is controlled by defining and placing a number of dummy layout features to shield actual layout features that neighbor the problematic open areas. In another embodiment, the adverse microloading variation is controlled by utilizing sacrificial layout features which are actually fabricated on the wafer temporarily to eliminate microloading variation, and which are subsequently removed from the wafer to leave behind the desired permanent structures.
摘要:
An invention is disclosed for protecting an input buffer. A current from a p-supply to an input buffer is lowered when an input voltage to the input buffer is tolerant HIGH. The p-supply being a VDD voltage supplied to a p-channel transistor in the input buffer. In addition, the p-supply is set to a particular voltage when the input voltage to the input buffer is LOW, the particular voltage being at a specific value such that input transistors within the input buffer do not experience overstress voltages. Optionally, p-supply can be prevented from supplying current to the input buffer when an input voltage to the input buffer is tolerant HIGH.
摘要:
Within a dynamic array architecture, an irregular wire layout region within a portion of a chip level layout is bracketed by placing first and second regular wire layout shapes on a first and second sides, respectively, of the irregular wire layout region. One or more irregular wire layout shapes are placed within the irregular wire layout region. A first edge spacing is maintained between the first regular wire layout shape and a first outer irregular wire layout shape within the irregular wire layout region nearest to the first regular wire layout shape. A second edge spacing is maintained between the second regular wire layout shape and a second outer irregular wire layout shape within the irregular wire layout region nearest to the second regular wire layout shape. The first and second edge spacings are defined to optimize lithography of the regular and irregular wire layout shapes.
摘要:
An invention is provided for a feed forward circuit that reduces delay through an inverting circuit. The feed forward circuit includes an inverter having an input and an output, and an inverting circuit having an input and an output. The input of the inverting circuit is coupled to the output of the inverter. A feed forward transistor having a gate coupled to the input of the inverter and a terminal coupled to the output of the inverting circuit also is included. In operation the feed forward transistor decreases the amount of time required for the output of the inverting circuit to change state. In sum, the invention reduces the delay when the inverting circuit transitions to a high state, without affecting the timing of the transition to a low state.
摘要:
Compositions for the use of sewage or wastewater treatment, controlling odors or a combination thereof are disclosed, wherein the composition comprises at least one iron-based compound. Furthermore, methods of reducing the odors in a sewage or wastewater system are disclosed that include: adding a composition comprising at least one iron-based compound to a sewage or wastewater system. As used herein, the phrase “at least one iron-based compound” includes ferrous chloride, ferric chloride, ferrous sulfate, ferrate, polyferric sulfate, Ferix-3 (Fe2(SO4)3H2O) or a combination thereof.
摘要:
A system, method and computer program utilize a distance associative hashing algorithmic means to provide a highly efficient means to rapidly address a large database. The indexing means can be readily subdivided into a plurality of independently-addressable segments where each such segment can address a portion of related data of the database where the sub-divided indexes of said portions reside entirely in the main memory of each of a multiplicity of server means. The resulting cluster of server means, each hosting an addressable sector of a larger database of searchable audio or video information, provides a significant improvement in the latency and scalability of an Automatic Content Recognition system, among other uses.
摘要:
Compositions for the use of sewage or wastewater treatment, controlling odors or a combination thereof are disclosed, wherein the composition comprises at least one iron-based compound. Furthermore, methods of reducing the odors in a sewage or wastewater system are disclosed that include: adding a composition comprising at least one iron-based compound to a sewage or wastewater system. As used herein, the phrase “at least one iron-based compound” includes ferrous chloride, ferric chloride, ferrous sulfate, ferrate, polyferric sulfate, Ferix-3 (Fe2(SO4)3H2O) or a combination thereof.
摘要翻译:公开了用于污水或废水处理,控制气味或其组合的组合物,其中所述组合物包含至少一种铁基化合物。 此外,公开了减少污水或废水系统中的气味的方法,其包括:向污水或废水系统中加入包含至少一种铁基化合物的组合物。 如本文所用,短语“至少一种铁基化合物”包括氯化亚铁,氯化铁,硫酸亚铁,高铁酸盐,聚硫酸铁,Ferix-3(Fe 2(SO 4)3 H 2 O)或其组合。