公开(公告)号：US4268849A

公开(公告)日：1981-05-19

申请号：US957645

申请日：1978-11-03

申请人： Bruce Gray ,  James M. Harris ,  William M. Gouin

发明人： Bruce Gray ,  James M. Harris ,  William M. Gouin

IPC分类号： H01L21/285 ,  H01L23/485 ,  H01L33/40 ,  H01L23/48

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12041

摘要： A bonding pad structure for an LED includes a first layer of nickel-chromium in contact with the contact face of a gallium arsenide wafer with further layers of either gold, palladium, or both, with palladium being the top layer of the first pad structure laid down by vaporization with a raised structure overlying the first structure by means of plating and including layers of nickel, gold and/or other conducting metal.

摘要翻译： 用于LED的接合焊盘结构包括与砷化镓晶片的接触面接触的第一层镍 - 铬，其另外的金，钯或二者层，钯是第一焊盘结构的顶层 通过用覆盖在第一结构上的凸起结构，通过电镀并包括镍，金和/或其它导电金属的层而蒸发。

公开(公告)号：US4078980A

公开(公告)日：1978-03-14

申请号：US728575

申请日：1976-10-01

申请人： James M. Harris ,  William M. Gouin ,  Bruce Gray

发明人： James M. Harris ,  William M. Gouin ,  Bruce Gray

IPC分类号： C25F3/08 ,  C25F5/00 ,  H01L21/3213 ,  H01L21/60 ,  H01L23/485 ,  C25F3/12

CPC分类号： C25F5/00 ,  C25F3/08 ,  H01L21/32134 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14

摘要： A layer of chromium is removed from the metalization system on a silicon integrated circuit wafer that also includes copper and aluminum. By electrolytic etching in a sulfuric acid solution containing about 10% by volume water saturated with chromium sulfate, chromium can be removed without excessive removal of copper or aluminum.

摘要翻译： 在包含铜和铝的硅集成电路晶片上，从金属化系统中除去一层铬。 通过在含有约10体积％硫酸铬饱和的水的硫酸溶液中进行电解蚀刻，可以除去铬而不过度去除铜或铝。

公开(公告)号：US4005472A

公开(公告)日：1977-01-25

申请号：US578651

申请日：1975-05-19

申请人： James M. Harris ,  William M. Gouin

发明人： James M. Harris ,  William M. Gouin

IPC分类号： H01L21/288 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/52 ,  H01L29/46 ,  H01L23/48

CPC分类号： H01L24/11 ,  H01L21/288 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14

摘要： An integrated circuit semiconductive device has a plurality of copper gang bonding bumps formed on the upper surface thereof. The bumps rise substantially above the surface of the semiconductive device and serve to make electrical connection to a pattern of intraconnect metallization formed on the semiconductive device for making electrical contact to various regions within the semiconductive body of the integrated circuit. The gang bonding bumps are to be thermal compression bonded to metallic leads by an automatic bonding machine. As a final step to the processing of the semiconductive wafers, containing the individual semiconductive devices, the wafers are immersed in an immersion gold plating solution for plating an antioxidant protective coating of gold of a thickness less than 6000 angstroms onto the copper gang bonding bumps to prevent oxidation thereof either before or during the gang bonding step. The thickness of such gold antioxidant coating permitting thermal compression bonding therethrough to the underlying metal layer.

摘要翻译： 集成电路半导体器件具有形成在其上表面上的多个铜焊接凸块。 凸起大大高于半导体器件的表面，并且用于与形成在半导体器件上的金属间连接的图案进行电连接，用于与集成电路的半导体本体内的各个区域进行电接触。 组合焊接凸块通过自动粘合机热压接在金属引线上。 作为处理半导体晶片的最终步骤，包含各个半导体器件，将晶片浸入浸镀金镀液中，以将厚度小于6000埃的金的抗氧化保护涂层镀在铜组合焊接凸块上 防止在组合步骤之前或过程中的氧化。 这种金抗氧化涂层的厚度允许热压粘合到其下面的金属层。