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    EUV diffractive optical element for semiconductor wafer lithography and method for making same
    1.
    发明申请
    EUV diffractive optical element for semiconductor wafer lithography and method for making same 审中-公开
    用于半导体晶片光刻的EUV衍射光学元件及其制造方法

    公开(公告)号：US20080259458A1

    公开(公告)日：2008-10-23

    申请号：US11788355

    申请日：2007-04-18

    申请人： Bruno M. LaFontaine ,  Ryoung-Han Kim ,  Jongwook Kye

    发明人： Bruno M. LaFontaine ,  Ryoung-Han Kim ,  Jongwook Kye

    IPC分类号： G02B5/18

    CPC分类号： G03F7/70158 ,  G03F7/70091

    摘要： According to one exemplary embodiment, an EUV (extreme ultraviolet) optical element in a light path between an EUV light source and a semiconductor wafer includes a reflective film having a number of bilayers. The reflective film includes a pattern, where the pattern causes a change in incident EUV light from the EUV light source, thereby controlling illumination at a pupil plane of an EUV projection optic to form a printed field on the semiconductor wafer. The EUV optical element can be utilized in an EUV lithographic process to fabricate a semiconductor die.

    摘要翻译： 根据一个示例性实施例，EUV光源和半导体晶片之间的光路中的EUV（极紫外）光学元件包括具有多个双层的反射膜。 反射膜包括图案，其中图案引起来自EUV光源的入射EUV光的变化，由此控制EUV投影光学器件的光瞳面处的照明，以在半导体晶片上形成印刷场。 EUV光学元件可以用于EUV光刻工艺以制造半导体管芯。

    MULTIPLE EXPOSURE TECHNIQUE USING OPC TO CORRECT DISTORTION
    2.
    发明申请
    MULTIPLE EXPOSURE TECHNIQUE USING OPC TO CORRECT DISTORTION 有权
    使用OPC纠正错误的多次曝光技术

    公开(公告)号：US20090040483A1

    公开(公告)日：2009-02-12

    申请号：US11834979

    申请日：2007-08-07

    申请人： Yunfei Deng ,  Jongwook Kye ,  Ryoung-han Kim

    发明人： Yunfei Deng ,  Jongwook Kye ,  Ryoung-han Kim

    IPC分类号： G03B27/42 ,  G03B27/68

    CPC分类号： G03B27/42

    摘要： Accurate ultrafine patterns are formed using a multiple exposure technique comprising implementing an OPC procedure to form an exposure reticle to compensate for distortion of an overlying resist pattern caused by an underlying resist pattern. Embodiments include forming a first resist pattern in a first resist layer over a target layer using a first exposure reticle, forming a second exposure reticle by an OPC technique to compensate for distortion of a second resist pattern caused by the underlying first resist pattern, depositing a second resist layer on the first resist pattern, forming the second resist pattern in the second resist layer using the second exposure reticle, the first and second resist patterns constituting a final resist mask, and forming a pattern in the target layer using the final resist mask.

    摘要翻译： 使用多重曝光技术形成精确的超细纹图案，该技术包括实施OPC程序以形成曝光掩模版，以补偿由下面的抗蚀剂图案引起的上覆抗蚀剂图案的变形。 实施例包括使用第一曝光掩模在目标层上在第一抗蚀剂层中形成第一抗蚀剂图案，通过OPC技术形成第二曝光掩模版，以补偿由下面的第一抗蚀剂图案引起的第二抗蚀剂图案的变形， 在第一抗蚀剂图案上的第二抗蚀剂层，使用第二曝光掩模在第二抗蚀剂层中形成第二抗蚀剂图案，第一和第二抗蚀剂图案构成最终抗蚀剂掩模，并且使用最终抗蚀剂掩模在目标层中形成图案 。

    Multiple exposure technique using OPC to correct distortion
    6.
    发明授权
    Multiple exposure technique using OPC to correct distortion 有权
    使用OPC多重曝光技术纠正失真

    公开(公告)号：US07829266B2

    公开(公告)日：2010-11-09

    申请号：US11834979

    申请日：2007-08-07

    申请人： Yunfei Deng ,  Jongwook Kye ,  Ryoung-han Kim

    发明人： Yunfei Deng ,  Jongwook Kye ,  Ryoung-han Kim

    IPC分类号： G03F7/00 ,  G03F1/00 ,  G03C5/00

    CPC分类号： G03B27/42

    摘要： Accurate ultrafine patterns are formed using a multiple exposure technique comprising implementing an OPC procedure to form an exposure reticle to compensate for distortion of an overlying resist pattern caused by an underlying resist pattern. Embodiments include forming a first resist pattern in a first resist layer over a target layer using a first exposure reticle, forming a second exposure reticle by an OPC technique to compensate for distortion of a second resist pattern caused by the underlying first resist pattern, depositing a second resist layer on the first resist pattern, forming the second resist pattern in the second resist layer using the second exposure reticle, the first and second resist patterns constituting a final resist mask, and forming a pattern in the target layer using the final resist mask.

    摘要翻译： 使用多重曝光技术形成精确的超细纹图形，其包括实施OPC过程以形成曝光掩模版，以补偿由下面的抗蚀剂图案引起的上覆抗蚀剂图案的变形。 实施例包括使用第一曝光掩模在目标层上在第一抗蚀剂层中形成第一抗蚀剂图案，通过OPC技术形成第二曝光掩模版，以补偿由下面的第一抗蚀剂图案引起的第二抗蚀剂图案的变形， 在第一抗蚀剂图案上的第二抗蚀剂层，使用第二曝光掩模在第二抗蚀剂层中形成第二抗蚀剂图案，第一和第二抗蚀剂图案构成最终抗蚀剂掩模，并且使用最终抗蚀剂掩模在目标层中形成图案 。

    HIGH FIDELITY MULTIPLE RESIST PATTERNING
    7.
    发明申请
    HIGH FIDELITY MULTIPLE RESIST PATTERNING 审中-公开
    高清多重电阻图案

    公开(公告)号：US20080292991A1

    公开(公告)日：2008-11-27

    申请号：US11753443

    申请日：2007-05-24

    申请人： Thomas I. Wallow ,  Ryoung-Han Kim ,  Jongwook Kye

    发明人： Thomas I. Wallow ,  Ryoung-Han Kim ,  Jongwook Kye

    IPC分类号： G03C5/00 ,  H01L21/31

    CPC分类号： G03F7/0035 ,  G03F7/168 ,  H01L21/0273 ,  H01L21/3086

    摘要： An integrated circuit fabrication process as described herein employs a double photoresist exposure technique. After creation of a first pattern of photoresist features on a wafer, a second photoresist layer is formed over the first pattern of photoresist features. The second photoresist layer is subjected to a reflow step that softens and relaxes the second photoresist material. This reflow step causes the exposed surface of the second photoresist layer to become substantially planar. Thereafter, the second photoresist layer can be exposed and developed to create a second pattern of photoresist features on the wafer. The planar surface of the second photoresist layer, which results from the reflow step, facilitates the creation of accurate, precise, and “high fidelity” photoresist features from the second photoresist material.

    摘要翻译： 本文所述的集成电路制造工艺采用双光致抗蚀剂曝光技术。 在晶片上形成光致抗蚀剂特征的第一图案之后，在光致抗蚀剂特征的第一图案之上形成第二光致抗蚀剂层。 对第二光致抗蚀剂层进行软化和松弛第二光致抗蚀剂材料的回流步骤。 该回流步骤使得第二光致抗蚀剂层的暴露表面变得基本上平坦。 此后，可以对第二光致抗蚀剂层进行曝光和显影以在晶片上产生光致抗蚀剂特征的第二图案。 由回流步骤产生的第二光致抗蚀剂层的平坦表面有助于从第二光致抗蚀剂材料产生准确，精确和“高保真”的光致抗蚀剂特征。

    Method and device for determining projection lens pupil transmission distribution and illumination intensity distribution in photolithographic imaging system
    9.
    发明授权
    Method and device for determining projection lens pupil transmission distribution and illumination intensity distribution in photolithographic imaging system 失效
    用于确定光刻成像系统中的投影透镜光瞳透射分布和照明强度分布的方法和装置

    公开(公告)号：US06977717B1

    公开(公告)日：2005-12-20

    申请号：US10727385

    申请日：2003-12-04

    申请人： Ivan Lalovic ,  Bruno M. LaFontaine ,  Jongwook Kye

    发明人： Ivan Lalovic ,  Bruno M. LaFontaine ,  Jongwook Kye

    IPC分类号： G03B27/42 ,  G03B27/54 ,  G03F7/20

    CPC分类号： G03F7/70083 ,  G03F7/70941

    摘要： A method and device for determining projection lens pupil transmission distribution in a photolithographic imaging system, the device including an illumination source; a transmissive reticle; an aperture layer having an illumination source side and a light emission side and comprising a plurality of openings therethrough; a diffuser mounted on the illumination source side of the aperture layer; a projection lens system; and an image plane, in which a pupil image corresponding to each of the plurality of openings in the aperture layer is formed at the image plane when radiation from the illumination source passes through the reticle, the diffuser, the aperture layer and the projection lens system, the pupil image having a projection lens pupil transmission distribution.

    摘要翻译： 一种用于确定光刻成像系统中的投影透镜光瞳透射分布的方法和装置，所述装置包括照明源; 透射式掩模版 具有照明源侧和发光侧的孔径层，并且包括穿过其的多个开口; 安装在孔层的照明源侧的扩散器; 投影透镜系统; 以及图像平面，其中当来自照明源的辐射通过掩模版，漫射器，孔径层和投影透镜系统时，在像面上形成与孔径层中的多个开口中的每一个对应的光瞳图像 ，瞳孔图像具有投影透镜瞳孔传播分布。