公开(公告)号：US20070126005A1

公开(公告)日：2007-06-07

申请号：US11625694

申请日：2007-01-22

申请人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Huh ,  Jong-Soo Yoon ,  Doug-Gyu Kim

发明人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Huh ,  Jong-Soo Yoon ,  Doug-Gyu Kim

IPC分类号： H01L29/04

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136236 ,  G02F2001/136272 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  Y10S438/949

摘要： A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode on a substrate. At this time, the upper layer of the gate pad is removed using a photoresist pattern having different thicknesses depending on position as etch mask. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire including a data line, a source electrode, a drain electrode, and a data pad.

摘要翻译： 包括由诸如铬，钼和钼合金的难熔金属制成的下层和由铝或铝合金制成的上层的导电层被沉积和图案化以形成包括栅极线，栅极焊盘， 以及在基板上的栅电极。 此时，根据作为蚀刻掩模的位置，使用具有不同厚度的光致抗蚀剂图案去除栅极焊盘的上层。 依次形成栅极绝缘层，半导体层和欧姆接触层。 导电材料被沉积并图案化以形成包括数据线，源电极，漏电极和数据焊盘的数据线。

公开(公告)号：US06524876B1

公开(公告)日：2003-02-25

申请号：US09545891

申请日：2000-04-07

申请人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Huh ,  Jong-Soo Yoon ,  Dong-Gyu Kim

发明人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Huh ,  Jong-Soo Yoon ,  Dong-Gyu Kim

IPC分类号： H01L2100

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136236 ,  G02F2001/136272 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  Y10S438/949

摘要： A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode on a substrate. At this time, the upper layer of the gate pad is removed using a photoresist pattern having different thicknesses depending on position as etch mask. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire including a data line, a source electrode, a drain electrode, and a data pad. Next, a passivation layer is deposited and patterned to form contact holes respectively exposing the drain electrode, the gate pad, and the data pad. At this time, the contact hole on the gate pad only exposes the lower layer of the gate pad, and the gate insulating layer and the passivation layer completely cover the upper layer of the gate pad. Next, indium tin oxide is deposited and patterned to form a pixel electrode, a redundant gate pad, and a redundant data pad respectively connected to the pixel electrode, the gate pad, and the data pad.

摘要翻译： 包括由诸如铬，钼和钼合金的难熔金属制成的下层和由铝或铝合金制成的上层的导电层被沉积和图案化以形成包括栅极线，栅极焊盘， 以及在基板上的栅电极。 此时，根据作为蚀刻掩模的位置，使用具有不同厚度的光致抗蚀剂图案去除栅极焊盘的上层。 依次形成栅极绝缘层，半导体层和欧姆接触层。 导电材料被沉积并图案化以形成包括数据线，源电极，漏电极和数据焊盘的数据线。 接下来，沉积并图案化钝化层以形成分别暴露漏电极，栅极焊盘和数据焊盘的接触孔。 此时，栅极焊盘上的接触孔仅暴露栅极焊盘的下层，栅极绝缘层和钝化层完全覆盖栅极焊盘的上层。 接下来，沉积和图案化氧化铟锡以形成分别连接到像素电极，栅极焊盘和数据焊盘的像素电极，冗余栅极焊盘和冗余数据焊盘。

公开(公告)号：US20050170592A1

公开(公告)日：2005-08-04

申请号：US11080612

申请日：2005-03-16

申请人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Huh ,  Jong-Soo Yoon ,  Dong-Gyu Kim

发明人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Huh ,  Jong-Soo Yoon ,  Dong-Gyu Kim

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L31/0376

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136236 ,  G02F2001/136272 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  Y10S438/949

摘要： A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode on a substrate. At this time, the upper layer of the gate pad is removed using a photoresist pattern having different thicknesses depending on position as etch mask. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire including a data line, a source electrode, a drain electrode, and a data pad. Next, a passivation layer is deposited and patterned to form contact holes respectively exposing the drain electrode, the gate pad, and the data pad. At this time, the contact hole on the gate pad only exposes the lower layer of the gate pad, and the gate insulating layer and the passivation layer completely cover the upper layer of the gate pad. Next, indium tin oxide is deposited and patterned to form a pixel electrode, a redundant gate pad, and a redundant data pad respectively connected to the pixel electrode, the gate pad, and the data pad.

摘要翻译： 包括由诸如铬，钼和钼合金的难熔金属制成的下层和由铝或铝合金制成的上层的导电层被沉积和图案化以形成包括栅极线，栅极焊盘， 以及在基板上的栅电极。 此时，根据作为蚀刻掩模的位置，使用具有不同厚度的光致抗蚀剂图案去除栅极焊盘的上层。 依次形成栅极绝缘层，半导体层和欧姆接触层。 导电材料被沉积并图案化以形成包括数据线，源电极，漏电极和数据焊盘的数据线。 接下来，沉积并图案化钝化层以形成分别暴露漏电极，栅极焊盘和数据焊盘的接触孔。 此时，栅极焊盘上的接触孔仅暴露栅极焊盘的下层，栅极绝缘层和钝化层完全覆盖栅极焊盘的上层。 接下来，沉积和图案化氧化铟锡以形成分别连接到像素电极，栅极焊盘和数据焊盘的像素电极，冗余栅极焊盘和冗余数据焊盘。

公开(公告)号：US06887742B2

公开(公告)日：2005-05-03

申请号：US10302927

申请日：2002-11-25

申请人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Huh ,  Jong-Soo Yoon ,  Dong-Gyu Kim

发明人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Huh ,  Jong-Soo Yoon ,  Dong-Gyu Kim

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L21/00 ,  H01L21/337

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136236 ,  G02F2001/136272 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  Y10S438/949

摘要： A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode on a substrate. At this time, the upper layer of the gate pad is removed using a photoresist pattern having different thicknesses depending on position as etch mask. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire including a data line, a source electrode, a drain electrode, and a data pad. Next, a passivation layer is deposited and patterned to form contact holes respectively exposing the drain electrode, the gate pad, and the data pad. At this time, the contact hole on the gate pad only exposes the lower layer of the gate pad, and the gate insulating layer and the passivation layer completely cover the upper layer of the gate pad. Next, indium tin oxide is deposited and patterned to form a pixel electrode, a redundant gate pad, and a redundant data pad respectively connected to the pixel electrode, the gate pad, and the data pad.

摘要翻译： 包括由诸如铬，钼和钼合金的难熔金属制成的下层和由铝或铝合金制成的上层的导电层被沉积并图案化以形成包括栅极线，栅极焊盘， 以及在基板上的栅电极。 此时，根据作为蚀刻掩模的位置，使用具有不同厚度的光致抗蚀剂图案去除栅极焊盘的上层。 依次形成栅极绝缘层，半导体层和欧姆接触层。 导电材料被沉积并图案化以形成包括数据线，源电极，漏电极和数据焊盘的数据线。 接下来，沉积并图案化钝化层以形成分别暴露漏电极，栅极焊盘和数据焊盘的接触孔。 此时，栅极焊盘上的接触孔仅暴露栅极焊盘的下层，栅极绝缘层和钝化层完全覆盖栅极焊盘的上层。 接下来，沉积和图案化氧化铟锡以形成分别连接到像素电极，栅极焊盘和数据焊盘的像素电极，冗余栅极焊盘和冗余数据焊盘。

公开(公告)号：US06849873B2

公开(公告)日：2005-02-01

申请号：US10303016

申请日：2002-11-25

申请人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Huh ,  Jong-Soo Yoon ,  Dong-Gyu Kim

发明人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Huh ,  Jong-Soo Yoon ,  Dong-Gyu Kim

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/04

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136236 ,  G02F2001/136272 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  Y10S438/949

摘要： In liquid crystal display device having a multi-layer conductive layer, such conductive layer is formed using a photoresist pattern having different thicknesses depending on the position. Upper layer of the gate pad is removed using an etch mask of the photoresist pattern of different thickness. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire. Finally passivation layer is formed and an indium tin oxide layer is deposited and patterned to form a pixel electrode, a redundant gate pad, and a redundant data pad.

摘要翻译： 在具有多层导电层的液晶显示装置中，使用根据位置具有不同厚度的光致抗蚀剂图案形成这种导电层。 使用不同厚度的光致抗蚀剂图案的蚀刻掩模去除栅极焊盘的上层。 依次形成栅极绝缘层，半导体层和欧姆接触层。 导电材料被沉积并图案化以形成数据线。 最后，形成钝化层，并且沉积和图案化氧化铟锡层以形成像素电极，冗余栅极焊盘和冗余数据焊盘。

公开(公告)号：US07507994B2

公开(公告)日：2009-03-24

申请号：US11625694

申请日：2007-01-22

申请人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Hao ,  Jong-Soo Yoon ,  Doug-Gyu Kim

发明人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Hao ,  Jong-Soo Yoon ,  Doug-Gyu Kim

IPC分类号： H01L29/04

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136236 ,  G02F2001/136272 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  Y10S438/949

摘要： A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode on a substrate. At this time, the upper layer of the gate pad is removed using a photoresist pattern having different thicknesses depending on position as etch mask. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire including a data line, a source electrode, a drain electrode, and a data pad.

摘要翻译： 包括由诸如铬，钼和钼合金的难熔金属制成的下层和由铝或铝合金制成的上层的导电层被沉积和图案化以形成包括栅极线，栅极焊盘， 以及在基板上的栅电极。 此时，根据作为蚀刻掩模的位置，使用具有不同厚度的光致抗蚀剂图案去除栅极焊盘的上层。 依次形成栅极绝缘层，半导体层和欧姆接触层。 导电材料被沉积并图案化以形成包括数据线，源电极，漏电极和数据焊盘的数据线。

公开(公告)号：US06307216B1

公开(公告)日：2001-10-23

申请号：US09533379

申请日：2000-03-22

申请人： Sung-Wook Huh ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Bum-Ki Baek

发明人： Sung-Wook Huh ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Bum-Ki Baek

IPC分类号： H01L2904

CPC分类号： G02F1/1309 ,  G02F2001/136263 ,  G02F2001/136272 ,  H01L27/124

摘要： Disclosed are ring-shaped gate wires and redundancy lines formed on a substrate so that defects due to disconnection of data lines can be readily repaired. The redundancy line is formed in a unit of a pixel, located outside the gate wire and divided into two portions. A gate insulating film is formed thereon, and data lines are formed thereon. Each of the data line overlaps the redundancy line and intersects a portion of the gate wire. A passivation film is formed on the data lines and transparent conductive connect patterns are formed thereon. The transparent connect pattern intersects two adjacent pixels and overlaps the ends of the redundancy lines facing each other. Since the end portions of the redundancy lines are bent out from the direction of the data line, it is not required that the connect pattern overlaps the data line. When the data line is disconnected on the step point where the data line intersects the gate wire, the redundancy lines can be short-circuited to the data line on either side of the disconnection point by using a laser to repair the disconnection.

摘要翻译： 公开了形成在基板上的环形栅极线和冗余线，从而可以容易地修复由于数据线断开引起的缺陷。 冗余线形成为位于栅极线外侧的像素单位，并分成两部分。 在其上形成栅极绝缘膜，并在其上形成数据线。 每条数据线与冗余线重叠，并与栅极线的一部分相交。 在数据线上形成钝化膜，并在其上形成透明导电连接图案。 透明连接图案与两个相邻的像素相交并且与彼此面对的冗余线的端部重叠。 由于冗余线的端部从数据线的方向弯曲，所以不需要连接图案与数据线重叠。 当数据线在数据线与栅极线相交的步进点上断开数据线时，冗余线可以通过使用激光修复断线而与断开点两侧的数据线短路。

公开(公告)号：US07176496B2

公开(公告)日：2007-02-13

申请号：US11080612

申请日：2005-03-16

申请人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Hao ,  Jong-Soo Yoon ,  Dong-Gyu Kim

发明人： Bum-Ki Baek ,  Mun-Pyo Hong ,  Jang-Soo Kim ,  Sung-Wook Hao ,  Jong-Soo Yoon ,  Dong-Gyu Kim

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L31/36

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136236 ,  G02F2001/136272 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  Y10S438/949

摘要： A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode on a substrate. At this time, the upper layer of the gate pad is removed using a photoresist pattern having different thicknesses depending on position as etch mask. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire including a data line, a source electrode, a drain electrode, and a data pad. Next, a passivation layer is deposited and patterned to form contact holes respectively exposing the drain electrode, the gate pad, and the data pad. At this time, the contact hole on the gate pad only exposes the lower layer of the gate pad, and the gate insulating layer and the passivation layer completely cover the upper layer of the gate pad. Next, indium tin oxide is deposited and patterned to form a pixel electrode, a redundant gate pad, and a redundant data pad respectively connected to the pixel electrode, the gate pad, and the data pad.

摘要翻译： 包括由诸如铬，钼和钼合金的难熔金属制成的下层和由铝或铝合金制成的上层的导电层被沉积和图案化以形成包括栅极线，栅极焊盘， 以及在基板上的栅电极。 此时，根据作为蚀刻掩模的位置，使用具有不同厚度的光致抗蚀剂图案去除栅极焊盘的上层。 依次形成栅极绝缘层，半导体层和欧姆接触层。 导电材料被沉积并图案化以形成包括数据线，源电极，漏电极和数据焊盘的数据线。 接下来，沉积并图案化钝化层以形成分别暴露漏电极，栅极焊盘和数据焊盘的接触孔。 此时，栅极焊盘上的接触孔仅暴露栅极焊盘的下层，栅极绝缘层和钝化层完全覆盖栅极焊盘的上层。 接下来，沉积和图案化氧化铟锡以形成分别连接到像素电极，栅极焊盘和数据焊盘的像素电极，冗余栅极焊盘和冗余数据焊盘。

公开(公告)号：US06445004B1

公开(公告)日：2002-09-03

申请号：US09617311

申请日：2000-07-14

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： H01L2904

CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl(+He) or SF6+Cl2(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金附魔或Cr附魔被蚀刻成具有平滑的锥角，并且Mo或MoW层用于显示器或 半导体显示器以及Al层或Cr层。 由于通过调节沉积压力可以沉积Mo或MoW层以便对基底施加低应力，所以可以单独使用单个MoW层作为布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，使用CF 4 + O 2的蚀刻气体系统可以防止Mo或MoW合金层的蚀刻，以及蚀刻气体 SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用采用诸如卤化氢和至少一种选自CF 4，CHF 3的气体的气体的蚀刻气体系统， CHClF 2，CH 3 F和C 2 F 6，产生良好的TFT特性，并且H 2等离子体处理可以进一步提高TFT特性。

公开(公告)号：US06686606B2

公开(公告)日：2004-02-03

申请号：US10389778

申请日：2003-03-18

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chua-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chua-Gi You

IPC分类号： H01L2904

CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.