公开(公告)号：US07898011B2

公开(公告)日：2011-03-01

申请号：US12160366

申请日：2006-12-07

Applicant: Jun Ho Won ,  Se Jung Oh ,  Jae Young Rim ,  Byoung Su Lee

Inventor： Jun Ho Won ,  Se Jung Oh ,  Jae Young Rim ,  Byoung Su Lee

IPC: H01L31/062

CPC classification number: H01L27/14685 ,  H01L27/14623 ,  H01L27/1463

Abstract: An image sensor for reducing crosstalk includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

Abstract translation: 用于减少串扰的图像传感器包括形成在最下层金属布线层的多个金属布线和半导体基板之间以及一个金属布线层和另一个金属布线层之间的防反射膜。 根据本发明的具有防反射膜的图像传感器可以通过使用形成在光电二极管周围的防反射膜与现有的图像传感器相比来减少颜色串扰和噪声。

公开(公告)号：US07714403B2

公开(公告)日：2010-05-11

申请号：US12305511

申请日：2007-06-14

Applicant: Byoung Su Lee ,  Jun Ho Won

Inventor： Byoung Su Lee ,  Jun Ho Won

IPC: H01L31/0232 ,  H01L31/102

CPC classification number: H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor using a back-illuminated photodiode and a manufacturing method thereof are provided. According to the present invention, since a surface of the back-illuminated photodiode can be stably treated, the back-illuminated photodiode can be formed to have a low dark current, a constant sensitivity of blue light for all photodiodes, and high sensitivity. In addition, it is possible to manufacture an image sensor with high density by employing a three dimensional structure in which a photodiode and a logic circuit are separately formed on different substrates.

Abstract translation: 提供了使用背照式光电二极管的图像传感器及其制造方法。 根据本发明，由于可以稳定地对背照式光电二极管的表面进行处理，因此可以将背照式光电二极管形成为具有低暗电流，对于所有光电二极管的蓝光的灵敏度恒定和高灵敏度。 此外，可以通过采用其中光电二极管和逻辑电路分开形成在不同基板上的三维结构来制造高密度的图像传感器。

公开(公告)号：US20090224345A1

公开(公告)日：2009-09-10

申请号：US12305511

申请日：2007-06-14

Applicant: Byoung Su Lee ,  Jun Ho Won

Inventor： Byoung Su Lee ,  Jun Ho Won

IPC: H01L31/0232 ,  H01L31/102

CPC classification number: H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor using a back-illuminated photodiode and a manufacturing method thereof are provided. According to the present invention, since a surface of the back-illuminated photodiode can be stably treated, the back-illuminated photodiode can be formed to have a low dark current, a constant sensitivity of blue light for all photodiodes, and high sensitivity. In addition, it is possible to manufacture an image sensor with high density by employing a three dimensional structure in which a photodiode and a logic circuit are separately formed on different substrates.

Abstract translation: 提供了使用背照式光电二极管的图像传感器及其制造方法。 根据本发明，由于可以稳定地对背照式光电二极管的表面进行处理，因此可以将背照式光电二极管形成为具有低暗电流，对于所有光电二极管的蓝光的灵敏度恒定和高灵敏度。 此外，可以通过采用其中光电二极管和逻辑电路分开形成在不同基板上的三维结构来制造高密度的图像传感器。

公开(公告)号：US20090058993A1

公开(公告)日：2009-03-05

申请号：US12281743

申请日：2007-02-07

Applicant: Byoung Su Lee ,  Jun Ho Won

Inventor： Byoung Su Lee ,  Jun Ho Won

IPC: H04N13/04 ,  H04N5/335

CPC classification number: H04N5/335 ,  H04N13/239

Abstract: A CMOS stereo camera for obtaining a three-dimensional image, in which two CMOS image sensors having the same characteristics are disposed on a single semiconductor substrate, is provided. The CMOS image sensors have image planes which are located on the same plane by disposing the two CMOS image sensors on the same semiconductor substrate. A digital signal processor (DSP) for processing a three-dimensional image is disposed between the CMOS image sensors. Optical axes of the CMOS image sensors are parallel with each other and orthogonal to the image planes. Since optical devices formed on the CMOS image sensors can be manufactured through the same processes, distortion of the optical axes between the two CMOS image sensors can be minimized.

Abstract translation: 提供一种用于获得三维图像的CMOS立体照相机，其中具有相同特性的两个CMOS图像传感器设置在单个半导体衬底上。 CMOS图像传感器具有通过将两个CMOS图像传感器布置在同一半导体衬底上而位于同一平面上的图像平面。 用于处理三维图像的数字信号处理器（DSP）设置在CMOS图像传感器之间。 CMOS图像传感器的光轴彼此平行并与图像平面正交。 由于可以通过相同的工艺制造形成在CMOS图像传感器上的光学器件，所以可以使两个CMOS图像传感器之间的光轴的失真最小化。

公开(公告)号：US20090008737A1

公开(公告)日：2009-01-08

申请号：US12160366

申请日：2006-12-07

Applicant: Jun Ho Won ,  Se Jung Oh ,  Jae Young Rim ,  Byoung Su Lee

Inventor： Jun Ho Won ,  Se Jung Oh ,  Jae Young Rim ,  Byoung Su Lee

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L27/14685 ,  H01L27/14623 ,  H01L27/1463

Abstract: Provided is an image sensor and a method of manufacturing the same. The image sensor includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer.The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

Abstract translation: 提供了一种图像传感器及其制造方法。 图像传感器包括形成在最下层金属布线层的多根金属布线和半导体基板之间以及一个金属布线层和另一个金属布线层之间的防反射膜。 根据本发明的具有防反射膜的图像传感器可以通过使用形成在光电二极管周围的防反射膜与现有的图像传感器相比来减少颜色串扰和噪声。

公开(公告)号：US20080296713A1

公开(公告)日：2008-12-04

申请号：US12097477

申请日：2006-12-07

Applicant: Byoung Su Lee ,  Jun Ho Won

Inventor： Byoung Su Lee ,  Jun Ho Won

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor with color filters capable of minimizing a distance through which incident light reaches photodiodes and flattening the color filters by minimizing step heights among color filters, and a method of manufacturing the same are provided. In the image sensor with the color filters, a metal is doped into an interlayer insulating SiO2 layer opened through a photosensitive film, and the color filters of red, green, and blue are formed in the interlayer insulating SiO2 layer through a heat treatment. In this case, a color filter array can be flattened by removing step heights among color filters generated in an conventional method in which the interlayer insulating SiO2 layer is sequentially coated with the color filters of red, green, and blue so as to form a color filter array. In addition, the distance through which the incident light reaches the photodiodes can be reduced by forming the color filters in the interlayer insulating SiO2 layer, thereby improving the sensitivity of the image sensor.

Abstract translation: 一种具有滤色器的图像传感器及其制造方法，该滤色器能够使入射光到达光电二极管的距离最小化，并且通过最小化滤色器的步进高度来平坦化滤色器。 在具有滤色片的图像传感器中，金属被掺杂到通过感光膜开放的层间绝缘SiO 2层中，并且通过热处理在层间绝缘SiO 2层中形成红色，绿色和蓝色的滤色器。 在这种情况下，滤色器阵列可以通过去除在传统方法中产生的滤色器中的阶梯高度，其中层间绝缘SiO 2层依次涂覆有红色，绿色和蓝色的滤色器，以形成颜色 过滤器阵列。 此外，通过在层间绝缘SiO 2层中形成滤色器，可以减少入射光到达光电二极管的距离，从而提高图像传感器的灵敏度。

公开(公告)号：US08421134B2

公开(公告)日：2013-04-16

申请号：US12976851

申请日：2010-12-22

Applicant: In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

Inventor： In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

IPC: H01L31/18

CPC classification number: H01L27/1464 ,  H01L27/14634

Abstract: A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

Abstract translation: 减小芯片尺寸的背面照明图像传感器具有设置在后侧照明图像传感器中的像素区域的垂直上部的电容器，其中光从用户的背面被照射，从而减小了芯片尺寸，并且 背面照明图像传感器的制造方法。 减少芯片尺寸的背面照明图像传感器的电容器形成在像素区域的垂直上部，而不是在像素区域的外侧，使得不需要用于形成电容器的像素区域的外部区域 ，从而减小芯片尺寸。

公开(公告)号：US08420429B2

公开(公告)日：2013-04-16

申请号：US13563655

申请日：2012-07-31

Applicant: In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

Inventor： In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

IPC: H01L21/00

CPC classification number: H01L27/1464 ,  H01L27/14634

Abstract: A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

公开(公告)号：US08399282B2

公开(公告)日：2013-03-19

申请号：US13026963

申请日：2011-02-14

Applicant: Heui Gyun Ahn ,  Se Jung Oh ,  In Gyun Jeon ,  Jun Ho Won

Inventor： Heui Gyun Ahn ,  Se Jung Oh ,  In Gyun Jeon ,  Jun Ho Won

IPC: H01L21/00

CPC classification number: H01L24/03 ,  H01L21/6835 ,  H01L23/481 ,  H01L24/05 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/68372 ,  H01L2224/05093 ,  H01L2924/01046 ,  H01L2924/01078

Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, forming vias that pass through the anti-reflective layer and the back side dielectric layer and contact back sides of super contacts which are formed on the Si substrate, and forming a pad on the back side dielectric layer such that the pad is electrically connected to the vias.

Abstract translation: 公开了一种用于在具有三维堆叠结构的晶片中形成焊盘的方法。 该方法包括将包括Si衬底和处理晶片的器件晶片接合，使Si衬底的背面变薄，在Si衬底的减薄的背侧上沉积抗反射层，在其上沉积背面电介质层 抗反射层，形成穿过抗反射层和背面电介质层的通孔，并接触形成在Si衬底上的超级触点的背面，并在背面电介质层上形成焊盘，使得焊盘 电连接到通孔。