公开(公告)号：US20120064676A1

公开(公告)日：2012-03-15

申请号：US13301032

申请日：2011-11-21

申请人： Hye-Hyang PARK ,  Byoung-Deog Choi ,  Dae-Woo Lee ,  Chang-Young Jeong ,  Moo-Jin Kim ,  Kyoung-Bo Kim

发明人： Hye-Hyang PARK ,  Byoung-Deog Choi ,  Dae-Woo Lee ,  Chang-Young Jeong ,  Moo-Jin Kim ,  Kyoung-Bo Kim

IPC分类号： H01L21/336

CPC分类号： H01L29/4908 ,  H01L27/1214 ,  H01L29/66757

摘要： A thin film transistor includes a substrate, a semiconductor layer on the substrate, a thermal oxide layer on the semiconductor layer, a gate electrode on the thermal oxide layer, the gate electrode positioned to correspond to a channel region of the semiconductor layer, an interlayer insulating layer on the substrate, and source and drain electrodes electrically connected to the semiconductor layer.

摘要翻译： 薄膜晶体管包括衬底，衬底上的半导体层，半导体层上的热氧化物层，热氧化层上的栅电极，位于半导体层的沟道区上的栅电极，中间层 绝缘层，以及与半导体层电连接的源极和漏极。

公开(公告)号：US20090072247A1

公开(公告)日：2009-03-19

申请号：US12213736

申请日：2008-06-24

申请人： Byoung-Deog Choi

发明人： Byoung-Deog Choi

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/3269 ,  H01L27/15

摘要： A light emitting display device includes a light emitting diode and a thin film transistor on a substrate, the light emitting diode and thin film transistor being electrically coupled to each other, and a photo diode on the substrate, the photo diode including an intrinsic region and a P-type doping region coupled to each other.

摘要翻译： 发光显示装置包括基板上的发光二极管和薄膜晶体管，所述发光二极管和薄膜晶体管彼此电耦合，并且所述基板上的光电二极管，所述光电二极管包括固有区域和 彼此耦合的P型掺杂区域。

公开(公告)号：US20080135838A1

公开(公告)日：2008-06-12

申请号：US11951525

申请日：2007-12-06

申请人： HYE-HYANG PARK ,  Byoung-Deog Choi

发明人： HYE-HYANG PARK ,  Byoung-Deog Choi

IPC分类号： H01L29/786 ,  H01L33/00 ,  H01L21/04

CPC分类号： H01L29/4908 ,  H01L27/1214 ,  H01L27/3244 ,  H01L29/66757

摘要： Provided are a thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode display device (OLED display device) including the thin film transistor having improved characteristics of the thin film transistor. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed on the semiconductor layer, and formed of a thermal oxide layer patterned to correspond to the semiconductor layer; a gate electrode disposed on the gate insulating layer, and disposed to correspond to a predetermined region of the semiconductor layer; an interlayer insulating layer disposed on an entire surface of the substrate; and source and drain electrodes electrically connected to the semiconductor layer.

摘要翻译： 提供薄膜晶体管，制造薄膜晶体管的方法和包括具有改进的薄膜晶体管特性的薄膜晶体管的有机发光二极管显示装置（OLED显示装置）。 薄膜晶体管包括：基板; 设置在所述基板上的半导体层; 栅极绝缘层，设置在所述半导体层上，并且由对应于所述半导体层图案化的热氧化物层形成; 栅极电极，设置在所述栅极绝缘层上，并且设置成对应于所述半导体层的预定区域; 设置在所述基板的整个表面上的层间绝缘层; 以及电连接到半导体层的源极和漏极。

公开(公告)号：US20050035343A1

公开(公告)日：2005-02-17

申请号：US10910350

申请日：2004-08-04

申请人： Byoung-Deog Choi ,  Won-Sik Kim ,  Myeong-Seob So

发明人： Byoung-Deog Choi ,  Won-Sik Kim ,  Myeong-Seob So

IPC分类号： G09F9/30 ,  H01L27/12 ,  H01L27/32 ,  H01L29/78 ,  H01L29/786 ,  H01L29/06

CPC分类号： H01L29/78666 ,  H01L27/12 ,  H01L29/783 ,  H01L29/7841 ,  H01L29/78609 ,  H01L29/78675

摘要： A TFT including a gate metallic layer, a body layer doped with a dopant having a first polarity, a source layer and a drain layer doped with a dopant having a second polarity, a semiconductor layer formed between the source layer and the drain layer, and a contact coupling the gate metallic layer and the body layer.

摘要翻译： 一种TFT，包括栅极金属层，掺杂有第一极性的掺杂剂的体层，掺杂有第二极性的掺杂剂的源极层和漏极层，形成在源极层和漏极层之间的半导体层，以及 耦合栅极金属层和主体层的接触。

公开(公告)号：US08704305B2

公开(公告)日：2014-04-22

申请号：US10959976

申请日：2004-10-08

申请人： Jae-Bon Koo ,  Byoung-Deog Choi ,  Myeong-Seob So ,  Won-Sik Kim

发明人： Jae-Bon Koo ,  Byoung-Deog Choi ,  Myeong-Seob So ,  Won-Sik Kim

IPC分类号： H01L27/01

CPC分类号： H01L29/78615

摘要： A thin film transistor of the present invention comprises, an active layer formed on an insulating substrate and having a channel region and source/drain regions; a gate electrode formed corresponding to the channel region of the active region; a body contact region separately formed with the source/drain regions in the active layer; source/drain electrodes each connected to the source/drain regions; and a conductive wiring for connecting the body contact region and the gate electrode.

摘要翻译： 本发明的薄膜晶体管包括：形成在绝缘基板上并具有沟道区域和源极/漏极区域的有源层; 形成对应于所述有源区的沟道区的栅电极; 与所述有源层中的源极/漏极区域分开形成的体接触区域; 源极/漏极，各自连接到源极/漏极区; 以及用于连接体接触区域和栅电极的导电布线。

公开(公告)号：US08343798B2

公开(公告)日：2013-01-01

申请号：US13084654

申请日：2011-04-12

申请人： Byoung-Deog Choi ,  Byoung-Jae Bae ,  Jeong-Hee Park

发明人： Byoung-Deog Choi ,  Byoung-Jae Bae ,  Jeong-Hee Park

IPC分类号： H01L21/06

CPC分类号： H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： A method of fabricating a phase change memory having a unit memory cell is described. The unit memory cell includes a phase change element connected to a corresponding vertical cell diode. The phase change element is formed from a phase change material layer formed on an interlayer dielectric layer including a via hole, and etched using a plasma formed from a plasma gas having a molecular weight of 17 or less to form a respective phase change material pattern in the via hole.

摘要翻译： 描述制造具有单元存储单元的相变存储器的方法。 单元存储单元包括连接到对应的垂直单元二极管的相变元件。 相变元件由形成在包括通孔的层间电介质层上的相变材料层形成，并使用由分子量为17以下的等离子体气体形成的等离子体进行蚀刻，形成各自的相变材料图案 通孔。

公开(公告)号：US07816684B2

公开(公告)日：2010-10-19

申请号：US12213736

申请日：2008-06-24

申请人： Byoung-Deog Choi

发明人： Byoung-Deog Choi

IPC分类号： H01L21/00

CPC分类号： H01L27/3269 ,  H01L27/15

摘要： A light emitting display device includes a light emitting diode and a thin film transistor on a substrate, the light emitting diode and thin film transistor being electrically coupled to each other, and a photo diode on the substrate, the photo diode including an intrinsic region and a P-type doping region coupled to each other.

摘要翻译： 发光显示装置包括基板上的发光二极管和薄膜晶体管，所述发光二极管和薄膜晶体管彼此电耦合，并且所述基板上的光电二极管，所述光电二极管包括固有区域和 彼此耦合的P型掺杂区域。

公开(公告)号：US07274037B2

公开(公告)日：2007-09-25

申请号：US10827326

申请日：2004-04-20

申请人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

发明人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

IPC分类号： H01L29/04

CPC分类号： H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

摘要： A thin film transistor including an active layer formed on an insulating substrate and having channel, source, and drain regions formed therein, wherein a voltage is applied to the channel region to discharge hot carriers generated in the channel region.

摘要翻译： 一种薄膜晶体管，包括形成在绝缘基板上的有源层，其中形成有沟道，源极和漏极区，其中电压被施加到沟道区以排放在沟道区中产生的热载流子。

公开(公告)号：US20070052022A1

公开(公告)日：2007-03-08

申请号：US11509853

申请日：2006-08-25

申请人： Byoung-Keon Park ,  Byoung-Deog Choi ,  Myeong-Seob So

发明人： Byoung-Keon Park ,  Byoung-Deog Choi ,  Myeong-Seob So

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L29/42384 ,  H01L27/124 ,  H01L29/66757

摘要： A thin film transistor (TFT), a method of fabricating the same, and a display device including the TFT, are provided. In the TFT, a channel region is connected to a gate electrode so that the influence of a substrate bias is reduced or eliminated. Thus, the threshold voltage of the TFT is reduced, a subthreshold slope can be improved, and a large drain current can be obtained at a low gate voltage.

摘要翻译： 提供薄膜晶体管（TFT），其制造方法以及包括TFT的显示装置。 在TFT中，沟道区域连接到栅电极，从而减小或消除衬底偏置的影响。 因此，TFT的阈值电压降低，可以提高亚阈值斜率，并且可以在低栅极电压下获得大的漏极电流。

公开(公告)号：US08652885B2

公开(公告)日：2014-02-18

申请号：US11760869

申请日：2007-06-11

申请人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

发明人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

摘要： A method of fabricating a thin film transistor includes forming an active layer on an insulating substrate; forming a gate insulation film on the insulating substrate; forming source, drain, and body contact regions which are separated by a channel region in the active layer; forming a gate on the gate insulation film; forming an interlayer insulation film on the insulating substrate; and forming source and drain electrodes electrically connected with the source and drain regions, respectively, wherein a voltage is applied to the channel region of the active layer through the body contact region, and the body contact region is connected to the source or drain electrode.

摘要翻译： 制造薄膜晶体管的方法包括在绝缘基板上形成有源层; 在绝缘基板上形成栅极绝缘膜; 形成由有源层中的沟道区分隔的源极，漏极和体接触区域; 在栅极绝缘膜上形成栅极; 在绝缘基板上形成层间绝缘膜; 以及分别形成与源极和漏极区域电连接的源极和漏极，其中电压通过本体接触区域施加到有源层的沟道区域，并且主体接触区域连接到源极或漏极电极。