公开(公告)号：US08409887B2

公开(公告)日：2013-04-02

申请号：US12713846

申请日：2010-02-26

申请人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/52 ,  H01L27/3265 ,  H01L2227/323

摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

公开(公告)号：US08318523B2

公开(公告)日：2012-11-27

申请号：US12405466

申请日：2009-03-17

申请人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

发明人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

IPC分类号： H01L29/04

CPC分类号： H01L29/78615 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757

摘要： A thin film transistor, a method of fabricating the same, and an OLED display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and having a channel region, source and drain regions, and a body contact region, a gate insulating layer disposed on the semiconductor layer to expose the body contact region, a silicon layer disposed on the gate insulating layer and contacting the body contact region exposed by the gate insulating layer, a gate electrode disposed on the silicon layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer and electrically connected with the source and drain regions, wherein the body contact region is formed in an edge region of the semiconductor layer.

摘要翻译： 薄膜晶体管，其制造方法和具有该薄膜晶体管的OLED显示装置。 薄膜晶体管包括基板，设置在基板上并具有沟道区，源极和漏极区以及体接触区的半导体层，设置在半导体层上以露出本体接触区的栅绝缘层，硅 层，设置在栅极绝缘层上并与由栅极绝缘层暴露的体接触区域接触，设置在硅层上的栅极电极，设置在栅电极上的层间绝缘层，以及设置在层间绝缘层上的源电极和漏电极 并且与所述源极和漏极区电连接，其中所述体接触区域形成在所述半导体层的边缘区域中。

公开(公告)号：US08253141B2

公开(公告)日：2012-08-28

申请号：US12502413

申请日：2009-07-14

申请人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee

发明人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee

IPC分类号： H01L29/76 ,  H01L29/04 ,  H01L27/01 ,  H01L31/036 ,  H01L31/0376

CPC分类号： H01L29/66757 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/41733 ,  H01L29/78645 ,  H01L29/78696

摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT. The TFT includes: a substrate; a polycrystalline silicon (poly-Si) semiconductor layer disposed on the substrate, including source, drain, and channel regions, a crystallization-inducing metal, first gettering sites disposed on opposing edges of the semiconductor layer, and a second gettering site spaced apart from the first gettering sites; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer disposed on the gate electrode; and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to the source and drain regions of the semiconductor layer.

摘要翻译： 薄膜晶体管（TFT），其制造方法以及具有TFT的有机发光二极管（OLED）显示装置。 TFT包括：基板; 设置在基板上的多晶硅（poly-Si）半导体层，包括源极，漏极和沟道区，结晶诱导金属，设置在半导体层的相对边缘上的第一吸杂位置和与 第一个吸气场; 设置在所述半导体层上的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并与半导体层的源极和漏极区域电连接的源极和漏极。

公开(公告)号：US20120000986A1

公开(公告)日：2012-01-05

申请号：US13009279

申请日：2011-01-19

申请人： Min-Jae JEONG ,  Ki-Yong Lee ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo Soo ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

发明人： Min-Jae JEONG ,  Ki-Yong Lee ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo Soo ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

IPC分类号： F24D5/00

CPC分类号： C23C16/4481 ,  C23C16/45525 ,  C23C16/52

摘要： A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.

摘要翻译： 一种用于沉积设备的罐和使用其的沉积设备，更具体地，涉及一种用于沉积设备的罐，其可以提供均匀量的源材料，所述源材料包含在供应到沉积室中的反应气体中，并且提高了供应 源材料和使用该罐的沉积装置。 沉积设备包括沉积室; 向所述沉积室供应反应气体的罐; 以及载体气体供给器，用于将载气供应到罐中，其中罐包括主体，加热单元加热主体，温度测量单元设置在主体下方。

公开(公告)号：US08890165B2

公开(公告)日：2014-11-18

申请号：US12714154

申请日：2010-02-26

申请人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L29/04 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/78675 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78696

摘要： A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法，薄膜晶体管（TFT），具有该多晶硅层的有机发光二极管（OLED）显示器件及其制造方法。 形成多晶硅层的方法包括提供衬底，在衬底上形成缓冲层，在缓冲层上形成非晶硅层，在非晶硅层中形成沟槽，在非晶硅层上形成覆盖层， 在所述覆盖层上形成金属催化剂层，对所述基板退火并将所述非晶硅层析出为多晶硅层。

公开(公告)号：US08436360B2

公开(公告)日：2013-05-07

申请号：US13333587

申请日：2011-12-21

申请人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

发明人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

IPC分类号： H01L29/04

CPC分类号： H01L29/78615 ,  H01L27/1277 ,  H01L29/66757

摘要： A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer.

摘要翻译： 薄膜晶体管，其制造方法和包括该薄膜晶体管的有机发光二极管显示装置。 薄膜晶体管包括：基板; 设置在所述基板上的半导体层，包括沟道区，源极/漏极区和主体接触区; 栅极绝缘层，设置在所述半导体层上以暴露所述本体接触区域; 栅电极，设置在所述栅极绝缘层上，以与所述主体接触区域接触; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并与源极/漏极区电连接的源极/漏极。 体接触区域形成在半导体层的边缘中。

公开(公告)号：US08101952B2

公开(公告)日：2012-01-24

申请号：US12409085

申请日：2009-03-23

申请人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

发明人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

IPC分类号： H01L29/04

CPC分类号： H01L29/78615 ,  H01L27/1277 ,  H01L29/66757

摘要： A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer.

摘要翻译： 薄膜晶体管，其制造方法和包括该薄膜晶体管的有机发光二极管显示装置。 薄膜晶体管包括：基板; 设置在所述基板上的半导体层，包括沟道区，源极/漏极区和主体接触区; 栅极绝缘层，设置在所述半导体层上以暴露所述本体接触区域; 栅电极，设置在所述栅极绝缘层上，以与所述主体接触区域接触; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并与源极/漏极区电连接的源极/漏极。 体接触区域形成在半导体层的边缘中。

公开(公告)号：US20110100973A1

公开(公告)日：2011-05-05

申请号：US12713982

申请日：2010-02-26

申请人： Heung-Yeol NA ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

发明人： Heung-Yeol NA ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

IPC分类号： F27D11/02

CPC分类号： F27B17/0025 ,  H01L21/67109

摘要： An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates.

摘要翻译： 一种用于热加工多个基板的装置，包括处理室，其中堆叠有多个基板的船只装载在该处理室中;以及加热器室，与处理室分离并具有多个加热器以向处理室施加热量。 这里，加热器安装成对应于多个基板的所有侧面。 因此，可以使处理室中的温度分布最小化并且均匀地向多个基板的整个区域供给热量。

公开(公告)号：US20100224881A1

公开(公告)日：2010-09-09

申请号：US12713846

申请日：2010-02-26

申请人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC分类号： H01L33/16 ,  H01L21/336 ,  H01L21/02

CPC分类号： H01L51/52 ,  H01L27/3265 ,  H01L2227/323

摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

摘要翻译： 提供了一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括具有薄膜晶体管区域和电容器区域的基板，设置在基板上的缓冲层，设置在基板上的栅极绝缘层，设置在电容器区域的栅极绝缘层上的下部电容电极， 设置在所述基板上的层间绝缘层，以及设置在所述层间绝缘层上并面向所述下部电容电极的上部电容电极，其中，所述缓冲层，所述栅极绝缘层，所述层间绝缘层，所述下部电容电极 并且上部电容器电极具有形成具有与半导体层的晶界相同形状的突起的表面。 所得的电容器具有增加的表面积，因此增加电容。

公开(公告)号：US20100163856A1

公开(公告)日：2010-07-01

申请号：US12650078

申请日：2009-12-30

申请人： Byoung-Keon PARK ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Ji-Su Ahn ,  Maxim Lisachenko

发明人： Byoung-Keon PARK ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Ji-Su Ahn ,  Maxim Lisachenko

IPC分类号： H01L51/50 ,  H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L21/02672 ,  H01L21/02488 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78696

摘要： A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.

摘要翻译： 一种薄膜晶体管，一种制造该薄膜晶体管的方法和一种包括该薄膜晶体管的有机发光二极管（OLED）显示装置，该薄膜晶体管包括：一基板; 形成在所述基板上的缓冲层; 设置在缓冲层上的第一半导体层; 设置在所述第一半导体层上的比所述第一半导体层大的第二半导体层; 与第一半导体层和第二半导体层绝缘的栅电极; 栅极绝缘层，用于使栅电极与第一半导体层和第二半导体层绝缘; 源极和漏极与栅电极绝缘并连接到第二半导体层; 设置在源极和漏极上的绝缘层和连接到源极和漏极之一的有机发光二极管。