公开(公告)号：US09117798B2

公开(公告)日：2015-08-25

申请号：US12714137

申请日：2010-02-26

申请人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Hyun-Gue Kim ,  Maxim Lisachenko ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi

发明人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Hyun-Gue Kim ,  Maxim Lisachenko ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi

IPC分类号： H01L29/04 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L27/32 ,  H01L27/12

CPC分类号： H01L29/42384 ,  H01L27/1248 ,  H01L27/3262 ,  H01L29/66757 ,  H01L29/78627

摘要： A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

摘要翻译： 薄膜晶体管，其制造方法和包括该薄膜晶体管的有机发光二极管（OLED）显示装置。 薄膜晶体管包括基板; 半导体层，设置在所述基板上并且包括沟道区域; 源/漏区包括离子和偏移区; 设置在所述半导体层上的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 设置在所述栅电极上的第一绝缘层; 设置在所述第一绝缘层上的第二绝缘层; 以及设置在第二绝缘层上的源/漏电极，并分别电连接到半导体层的源/漏区。 在源极/漏极区上的栅极绝缘层和第一绝缘层的厚度之和小于源极/漏极区域中包含的离子的垂直分散深度。

公开(公告)号：US20100244036A1

公开(公告)日：2010-09-30

申请号：US12714137

申请日：2010-02-26

申请人： Byoung-Keon PARK ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Hyun-Gue Kim ,  Maxim Lisachenko ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi

发明人： Byoung-Keon PARK ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Hyun-Gue Kim ,  Maxim Lisachenko ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi

IPC分类号： H01L33/16 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/42384 ,  H01L27/1248 ,  H01L27/3262 ,  H01L29/66757 ,  H01L29/78627

摘要： A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

摘要翻译： 薄膜晶体管，其制造方法和包括该薄膜晶体管的有机发光二极管（OLED）显示装置。 薄膜晶体管包括基板; 半导体层，设置在所述基板上并且包括沟道区域; 源/漏区包括离子和偏移区; 设置在所述半导体层上的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 设置在所述栅电极上的第一绝缘层; 设置在所述第一绝缘层上的第二绝缘层; 以及设置在第二绝缘层上的源/漏电极，并分别电连接到半导体层的源/漏区。 在源极/漏极区上的栅极绝缘层和第一绝缘层的厚度之和小于源极/漏极区域中包含的离子的垂直分散深度。

公开(公告)号：US08409887B2

公开(公告)日：2013-04-02

申请号：US12713846

申请日：2010-02-26

申请人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/52 ,  H01L27/3265 ,  H01L2227/323

摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

公开(公告)号：US20100224881A1

公开(公告)日：2010-09-09

申请号：US12713846

申请日：2010-02-26

申请人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC分类号： H01L33/16 ,  H01L21/336 ,  H01L21/02

CPC分类号： H01L51/52 ,  H01L27/3265 ,  H01L2227/323

摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

摘要翻译： 提供了一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括具有薄膜晶体管区域和电容器区域的基板，设置在基板上的缓冲层，设置在基板上的栅极绝缘层，设置在电容器区域的栅极绝缘层上的下部电容电极， 设置在所述基板上的层间绝缘层，以及设置在所述层间绝缘层上并面向所述下部电容电极的上部电容电极，其中，所述缓冲层，所述栅极绝缘层，所述层间绝缘层，所述下部电容电极 并且上部电容器电极具有形成具有与半导体层的晶界相同形状的突起的表面。 所得的电容器具有增加的表面积，因此增加电容。

公开(公告)号：US08048783B2

公开(公告)日：2011-11-01

申请号：US12714252

申请日：2010-02-26

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  C23C14/04 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02672

摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法和用于其的原子层沉积装置。 该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。 该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

公开(公告)号：US20100227458A1

公开(公告)日：2010-09-09

申请号：US12714252

申请日：2010-02-26

申请人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

发明人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

IPC分类号： H01L21/20 ,  C23C16/48

CPC分类号： H01L21/02532 ,  C23C14/04 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02672

摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法和用于其的原子层沉积装置。 该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。 该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

公开(公告)号：US08546248B2

公开(公告)日：2013-10-01

申请号：US13177936

申请日：2011-07-07

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  C23C14/04 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02672

摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法和用于其的原子层沉积装置。 该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。 该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

公开(公告)号：US20100224883A1

公开(公告)日：2010-09-09

申请号：US12714201

申请日：2010-02-26

申请人： Byoung-Keon PARK ,  Tae-Hoo Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Maxim Lisachenko ,  Bo-Kyung Choi ,  Dae-Woo Lee ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Ji-Su Ahn ,  Yong-Dae Kim ,  Heung-Yeol Na ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jae-Wan Jung ,  Sang-Yon Yoon

发明人： Byoung-Keon PARK ,  Tae-Hoo Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Maxim Lisachenko ,  Bo-Kyung Choi ,  Dae-Woo Lee ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Ji-Su Ahn ,  Yong-Dae Kim ,  Heung-Yeol Na ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jae-Wan Jung ,  Sang-Yon Yoon

IPC分类号： H01L33/16 ,  H01L29/786 ,  H01L21/336 ,  H01L21/20

CPC分类号： H01L29/6675 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78696

摘要： A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.

摘要翻译： 薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置。 TFT和OLED显示装置包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，与半导体层绝缘的栅电极，将半导体层与栅电极绝缘的栅极绝缘层， 以及与栅电极绝缘并且部分地连接到半导体层的源电极和漏电极，其中半导体层由通过金属催化剂结晶的多晶硅层形成，并且使用蚀刻剂通过吸气除去金属催化剂。 此外，OLED显示装置包括设置在基板的整个表面上的绝缘层，设置在绝缘层上并电连接到源极和漏极之一的第一电极，有机层和第二电极。

公开(公告)号：US20100227443A1

公开(公告)日：2010-09-09

申请号：US12713928

申请日：2010-02-26

申请人： Kil-Won LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Byoung-Keon Park ,  Maxim Lisachenko ,  Ji-Su Ahn ,  Young-Dae Kim ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Yun-Mo Chung ,  Min-Jae Jeong ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

发明人： Kil-Won LEE ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Byoung-Keon Park ,  Maxim Lisachenko ,  Ji-Su Ahn ,  Young-Dae Kim ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Yun-Mo Chung ,  Min-Jae Jeong ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757

摘要： A method of forming a polycrystalline silicon layer includes forming an amorphous silicon layer on a substrate by chemical vapor deposition using a gas including a silicon atom and hydrogen gas, and crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal. The resultant polycrystalline silicon layer has an improved charge mobility.

摘要翻译： 形成多晶硅层的方法包括通过使用包含硅原子和氢气的气体的化学气相沉积在基板上形成非晶硅层，并且使用结晶诱导金属将非晶硅层结晶成多晶硅层。 所得多晶硅层具有改善的电荷迁移率。

公开(公告)号：US08890165B2

公开(公告)日：2014-11-18

申请号：US12714154

申请日：2010-02-26

申请人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L29/04 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/78675 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78696

摘要： A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法，薄膜晶体管（TFT），具有该多晶硅层的有机发光二极管（OLED）显示器件及其制造方法。 形成多晶硅层的方法包括提供衬底，在衬底上形成缓冲层，在缓冲层上形成非晶硅层，在非晶硅层中形成沟槽，在非晶硅层上形成覆盖层， 在所述覆盖层上形成金属催化剂层，对所述基板退火并将所述非晶硅层析出为多晶硅层。