公开(公告)号：US20180190918A1

公开(公告)日：2018-07-05

申请号：US15740611

申请日：2016-06-29

申请人： FLEXENABLE LIMITED ,  CAMBRIDGE ENTERPRISE LIMITED

发明人： Henning SIRRINGHAUS ,  Mark NIKOLKA ,  Iyad NASRALLAH ,  Jan JONGMAN

IPC分类号： H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0558 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/002 ,  H01L51/0541

摘要： An electronic or optoelectronic device including a semiconductor layer, wherein the semiconductor layer comprises at least a semiconductive organic material, water species, and at least one additive in an amount of at least 0.1% by weight relative to the semiconductive organic material, which additive at least partly negates a charge carrier trapping effect caused by the water species on the semiconductive organic material.

公开(公告)号：US20180337287A1

公开(公告)日：2018-11-22

申请号：US15520574

申请日：2015-10-20

申请人： CAMBRIDGE ENTERPRISE LIMITED

发明人： Henning SIRRINGHAUS ,  Kal BANGER ,  Vincenzo PECUNIA

IPC分类号： H01L29/786 ,  H01L27/32 ,  H01L29/49 ,  H01L21/02 ,  H01L21/445 ,  H01L29/66 ,  H01L51/05 ,  H01L51/00 ,  H01L27/28 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/78693 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/02565 ,  H01L21/02628 ,  H01L21/445 ,  H01L27/283 ,  H01L27/286 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/516 ,  H01L29/66969 ,  H01L29/78391 ,  H01L29/78696 ,  H01L51/0097 ,  H01L51/052 ,  H01L51/0541 ,  H01L2227/323

摘要： A transistor device comprising an inorganic oxide semiconductor channel having a channel length L and a channel width W between source and drain conductors and capacitively coupled to a gate conductor via an organic polymer dielectric in contact with the inorganic oxide semiconductor channel, wherein the gate voltage required to maintain a constant current of at least X nA between the source and drain conductors over a period of 14 hours while the gate and drain conductors are maintained at the same electric potential, varies by less than 1V, preferably less than about 0.2V; wherein X equals the W/L ratio multiplied by 50.

公开(公告)号：US20140027745A1

公开(公告)日：2014-01-30

申请号：US13952945

申请日：2013-07-29

申请人： CAMBRIDGE ENTERPRISE LIMITED ,  EIDGENOESSISCHE TECHNISCHE HOCHSCHULE ZUERICH ,  TECHNISCHE UNIVERSITEIT EINDHOVEN

发明人： Henning SIRRINGHAUS ,  Shalom GOFFRI ,  Rene A.J. JANSSEN ,  Christopher Paul RADANO ,  Paul SMITH ,  Christian MULLER ,  Pascal WOLFER ,  Natalie STINGELIN-STUTZMANN

IPC分类号： H01L51/00

CPC分类号： H01L51/0034 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566 ,  Y02E10/549

摘要： A method for forming a semiconductor body, the method comprising: forming a mixture of an organic semiconducting material and a binder material; causing the semiconducting material to at least partially solidify; and causing the binder material to crystallize in such a way as to cause the semiconducting material to at least partially segregate from the binder material.

摘要翻译： 一种形成半导体体的方法，所述方法包括：形成有机半导体材料和粘合剂材料的混合物; 使半导体材料至少部分地固化; 并使粘结剂材料以使半导体材料至少部分地与粘合剂材料分离的方式结晶。