公开(公告)号：US11916038B2

公开(公告)日：2024-02-27

申请号：US17962061

申请日：2022-10-07

申请人： CANON ANELVA CORPORATION ,  TOHOKU UNIVERSITY

发明人： Takayuki Saitoh ,  Takayuki Moriwaki ,  Takehito Shimatsu ,  Miyuki Uomoto

IPC分类号： H01L23/00 ,  C23C14/08 ,  H01L21/50 ,  H01L23/10 ,  H01L23/20 ,  C23C14/10 ,  C23C14/16 ,  C23C14/35 ,  C23C14/58

CPC分类号： H01L24/80 ,  C23C14/083 ,  C23C14/086 ,  C23C14/10 ,  C23C14/165 ,  C23C14/35 ,  C23C14/5853 ,  H01L21/50 ,  H01L23/10 ,  H01L23/20 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L2224/038 ,  H01L2224/0345 ,  H01L2224/05573 ,  H01L2224/08145 ,  H01L2224/80009 ,  H01L2224/80055 ,  H01L2224/80379 ,  H01L2224/80896 ,  H01L2224/80948 ,  H01L2924/0533 ,  H01L2924/0536 ,  H01L2924/0549 ,  H01L2924/05341 ,  H01L2924/05342 ,  H01L2924/05442

摘要： Substrates that are bonding targets are bonded in ambient atmosphere via bonding films, including oxides, formed on bonding faces of the substrates. The bonding films, which are metal or semiconductor thin films formed by vacuum film deposition and at least the surfaces of which are oxidized, are formed into the respective smooth faces of two substrates having the smooth faces that serve as the bonding faces. The bonding films are exposed to a space that contains moisture, and the two substrates are overlapped in the ambient atmosphere such that the surfaces of the bonding films are made to be hydrophilic and the surfaces of the bonding films contact one another. Through this, a chemical bond is generated at the bonded interface, and thereby the two substrates are bonded together in the ambient atmosphere. The bonding strength γ can be improved by heating the bonded substrates at a temperature.

公开(公告)号：US11450643B2

公开(公告)日：2022-09-20

申请号：US17670593

申请日：2022-02-14

申请人： TOHOKU UNIVERSITY ,  CANON ANELVA CORPORATION

发明人： Takehito Shimatsu ,  Miyuki Uomoto ,  Kazuo Miyamoto ,  Yoshikazu Miyamoto ,  Nobuhiko Katoh ,  Takayuki Moriwaki ,  Takayuki Saitoh

IPC分类号： H01L23/00 ,  C23C14/08 ,  C23C14/34 ,  C23C14/58

摘要： A bonded structure includes a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including a first oxide thin film layered on the first substrate and a second oxide thin film layered on the second substrate; either or both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects; and an interface between the first oxide thin film and the second oxide thin film=being bonded by chemical bonding, and the interface comprising a low-density portion whose density is lower than that of the two oxide thin films.