公开(公告)号：US09922953B2

公开(公告)日：2018-03-20

申请号：US15121855

申请日：2015-02-26

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Paul Gondcharton ,  Lamine Benaissa ,  Bruno Imbert ,  Hubert Moriceau

IPC分类号： H01L21/00 ,  H01L21/47 ,  H01L21/44 ,  H01L23/00 ,  H01L21/18 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L24/83 ,  H01L21/185 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0381 ,  H01L2224/03845 ,  H01L2224/05073 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/2745 ,  H01L2224/2755 ,  H01L2224/27845 ,  H01L2224/29147 ,  H01L2224/80055 ,  H01L2224/80357 ,  H01L2224/8083 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/8092 ,  H01L2224/80948 ,  H01L2224/83895 ,  H01L2225/06524 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01008 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01017 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2924/049 ,  H01L2924/00012

摘要： A method for producing a structure by direct bonding of two elements, the method including: production of the elements to be assembled and assembly of the elements. The production of the elements to be assembled includes: deposition on a substrate of a TiN layer by physical vapor deposition, and deposition of a copper layer on the TiN layer. The assembly of the elements includes: polishing the surfaces of the copper layers intended to come into contact so that they have a roughness of less than 1 nm RMS and hydrophilic properties, bringing the surfaces into contact, and storing the structure at atmospheric pressure and at ambient temperature.

公开(公告)号：US20180151436A1

公开(公告)日：2018-05-31

申请号：US15573699

申请日：2016-05-12

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Aurélie TAUZIN ,  Bruno IMBERT

IPC分类号： H01L21/78 ,  H01L21/324 ,  H01L23/00

CPC分类号： H01L21/7806 ,  H01L21/30612 ,  H01L21/3245 ,  H01L21/76254 ,  H01L24/80 ,  H01L31/0725 ,  H01L31/0735 ,  H01L2224/80004 ,  H01L2224/80011 ,  H01L2224/80055 ,  H01L2224/80075 ,  H01L2224/8009 ,  H01L2224/80894 ,  H01L2224/80948 ,  H01L2924/10329 ,  H01L2924/10335

摘要： The method is carried out of a first substrate having a first layer made of a first material with a second substrate having a second layer made of a second material, the first material and the second material being of different natures and selected from alloys of elements of columns III and V, the method having the steps of: a) providing the first substrate and the second substrate, b) bringing the first substrate into contact with the second substrate so as to form a bonding interface between the first layer and the second layer, c) performing a first heat treatment at a first predefined temperature, d) thinning one of the substrates, e) depositing, at a temperature less than or equal to the first predefined temperature, a barrier layer, on the thinned substrate, and f) performing a second heat treatment at a second predefined temperature, greater than the first predefined temperature.

公开(公告)号：US11916038B2

公开(公告)日：2024-02-27

申请号：US17962061

申请日：2022-10-07

申请人： CANON ANELVA CORPORATION ,  TOHOKU UNIVERSITY

发明人： Takayuki Saitoh ,  Takayuki Moriwaki ,  Takehito Shimatsu ,  Miyuki Uomoto

IPC分类号： H01L23/00 ,  C23C14/08 ,  H01L21/50 ,  H01L23/10 ,  H01L23/20 ,  C23C14/10 ,  C23C14/16 ,  C23C14/35 ,  C23C14/58

CPC分类号： H01L24/80 ,  C23C14/083 ,  C23C14/086 ,  C23C14/10 ,  C23C14/165 ,  C23C14/35 ,  C23C14/5853 ,  H01L21/50 ,  H01L23/10 ,  H01L23/20 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L2224/038 ,  H01L2224/0345 ,  H01L2224/05573 ,  H01L2224/08145 ,  H01L2224/80009 ,  H01L2224/80055 ,  H01L2224/80379 ,  H01L2224/80896 ,  H01L2224/80948 ,  H01L2924/0533 ,  H01L2924/0536 ,  H01L2924/0549 ,  H01L2924/05341 ,  H01L2924/05342 ,  H01L2924/05442

摘要： Substrates that are bonding targets are bonded in ambient atmosphere via bonding films, including oxides, formed on bonding faces of the substrates. The bonding films, which are metal or semiconductor thin films formed by vacuum film deposition and at least the surfaces of which are oxidized, are formed into the respective smooth faces of two substrates having the smooth faces that serve as the bonding faces. The bonding films are exposed to a space that contains moisture, and the two substrates are overlapped in the ambient atmosphere such that the surfaces of the bonding films are made to be hydrophilic and the surfaces of the bonding films contact one another. Through this, a chemical bond is generated at the bonded interface, and thereby the two substrates are bonded together in the ambient atmosphere. The bonding strength γ can be improved by heating the bonded substrates at a temperature.

公开(公告)号：US20170025377A1

公开(公告)日：2017-01-26

申请号：US15121855

申请日：2015-02-26

申请人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

发明人： Paul GONDCHARTON ,  Lamine BENAISSA ,  Bruno IMBERT ,  Hubert MORICEAU

IPC分类号： H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L24/83 ,  H01L21/185 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0381 ,  H01L2224/03845 ,  H01L2224/05073 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/2745 ,  H01L2224/2755 ,  H01L2224/27845 ,  H01L2224/29147 ,  H01L2224/80055 ,  H01L2224/80357 ,  H01L2224/8083 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/8092 ,  H01L2224/80948 ,  H01L2224/83895 ,  H01L2225/06524 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01008 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01017 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2924/049 ,  H01L2924/00012

摘要： A method for producing a structure by direct bonding of two elements, the method including: production of the elements to be assembled and assembly of the elements. The production of the elements to be assembled includes: deposition on a substrate of a TiN layer by physical vapor deposition, and deposition of a copper layer on the TiN layer. The assembly of the elements includes: polishing the surfaces of the copper layers intended to come into contact so that they have a roughness of less than 1 nm RMS and hydrophilic properties, bringing the surfaces into contact, and storing the structure at atmospheric pressure and at ambient temperature.

摘要翻译： 一种用于通过直接粘合两个元件来生产结构的方法，所述方法包括：生产要组装的元件和元件的组装。 要组装的元件的生产包括：通过物理气相沉积在TiN层的衬底上沉积，并且在TiN层上沉积铜层。 元件的组装包括：抛光意图接触的铜层的表面，使得它们具有小于1nm RMS的粗糙度和亲水性，使表面接触，并将结构储存在大气压和 环境温度。

公开(公告)号：US20100122456A1

公开(公告)日：2010-05-20

申请号：US12272404

申请日：2008-11-17

申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu

发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu

IPC分类号： H05K3/30

CPC分类号： H01L24/74 ,  H01L24/75 ,  H01L24/80 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/74 ,  H01L2224/75102 ,  H01L2224/75251 ,  H01L2224/75701 ,  H01L2224/75702 ,  H01L2224/75705 ,  H01L2224/75753 ,  H01L2224/75901 ,  H01L2224/80055 ,  H01L2224/80075 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83801 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  Y10T29/49124 ,  Y10T29/4913 ,  Y10T29/49133 ,  Y10T29/49135 ,  H01L2924/00

摘要： A method for bonding includes providing a first die and a second die; scanning at least one of the first die and the second die to determine thickness variations of the at least one of the first die and the second die; placing the second die facing the first die with a first surface of the first die facing a second surface of the second die; aligning the first surface and the second surface parallel to each other using the thickness variations; and bonding the second die onto the first die. The step of aligning the first surface and the second surface includes tilting one of the first die and the second die.

摘要翻译： 一种用于接合的方法包括提供第一模具和第二模具; 扫描第一管芯和第二管芯中的至少一个，以确定第一管芯和第二管芯中的至少一个的厚度变化; 将所述第二模具面向所述第一模具，所述第一模具的第一表面面向所述第二模具的第二表面; 使用厚度变化使第一表面和第二表面彼此平行; 以及将所述第二模具接合到所述第一模具上。 对准第一表面和第二表面的步骤包括倾斜第一模具和第二模具中的一个。