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公开(公告)号：US20230118600A1
公开(公告)日：2023-04-20
申请号：US17937583
申请日：2022-10-03
IPC分类号： H04N5/3745 , G01J1/44 , G01S17/89
摘要： A photoelectric conversion device includes a photodiode configured to perform avalanche multiplication, a recharging circuit configured to perform a recharging operation to bring the photodiode after the avalanche multiplication into a state in which the avalanche multiplication can be performed again based on a first control signal including pulses that periodically repeat transitions from a first level to a second level, and a counter configured to count the number of occurrences of the avalanche multiplication by being enabled based on a second control signal. Before the counter is enabled based on the second control signal, the first control signal transitions from the first level to the second level and transitions from the second level to the first level.
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公开(公告)号：US20190057939A1
公开(公告)日：2019-02-21
申请号：US16059331
申请日：2018-08-09
发明人： Shuji Tobashi , Masayuki Tsuchiya
IPC分类号： H01L23/544 , H01L21/027 , H01L21/308
摘要： A method of manufacturing a semiconductor device includes forming a first photoresist film over a substrate, exposing a first pattern including an alignment pattern in a first region, forming, on the substrate, an alignment mark corresponding to the exposed alignment pattern, forming a second photoresist film over the substrate on which the alignment mark is formed, dividing a second pattern into a plurality of regions and exposing the divided regions separately in a second region while performing positioning with respect to the alignment mark, and developing the second photoresist film and forming the second photoresist film having the second pattern, wherein at least a part of the second region is located outside an effective exposure region of an exposure apparatus in exposure of the first pattern.
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公开(公告)号：US20160234409A1
公开(公告)日：2016-08-11
申请号：US15007579
申请日：2016-01-27
IPC分类号： H04N5/225 , H04N5/372 , H01L27/146
CPC分类号： H04N5/372 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： An image sensor includes charge accumulation region of first conductivity type, floating diffusion of the first conductivity type, stacked semiconductor region having first region of second conductivity type arranged below the charge accumulation region, second region of the second conductivity type arranged above the first region, and third region of the second conductivity type arranged above the second region. The sensor further includes fourth region of the second conductivity type arranged in region between the charge accumulation region and the floating diffusion, below the floating diffusion, and above the stacked semiconductor region, transfer gate for transferring charges of the charge accumulation region to the floating diffusion, and fifth region of the second conductivity type arranged in region below the charge accumulation region and the fourth region, and above the stacked semiconductor region.
摘要翻译： 图像传感器包括第一导电类型的电荷累积区域，第一导电类型的浮动扩散，布置在电荷累积区域下方的具有第二导电类型的第一区域的堆叠半导体区域，布置在第一区域上方的第二导电类型的第二区域， 以及布置在第二区域上方的第二导电类型的第三区域。 传感器还包括布置在电荷累积区域和浮动扩散区域之间的区域中的第二导电类型的第四区域，位于浮动扩散区之下和堆叠半导体区域之上，用于将电荷累积区域的电荷转移到浮动扩散区的传输栅极 和第二导电类型的第五区域布置在电荷累积区域和第四区域下方以及堆叠的半导体区域之上的区域中。
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公开(公告)号：US10573531B2
公开(公告)日：2020-02-25
申请号：US16059331
申请日：2018-08-09
发明人： Shuji Tobashi , Masayuki Tsuchiya
IPC分类号： H01L21/00 , H01L21/3213 , H01L23/544 , H01L21/308 , H01L21/027 , H01L21/311 , H01L21/033 , G03F9/00 , G03F7/20 , G03F1/42
摘要： A method of manufacturing a semiconductor device includes forming a first photoresist film over a substrate, exposing a first pattern including an alignment pattern in a first region, forming, on the substrate, an alignment mark corresponding to the exposed alignment pattern, forming a second photoresist film over the substrate on which the alignment mark is formed, dividing a second pattern into a plurality of regions and exposing the divided regions separately in a second region while performing positioning with respect to the alignment mark, and developing the second photoresist film and forming the second photoresist film having the second pattern, wherein at least a part of the second region is located outside an effective exposure region of an exposure apparatus in exposure of the first pattern.
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公开(公告)号：US20170229498A1
公开(公告)日：2017-08-10
申请号：US15415245
申请日：2017-01-25
发明人： Satoshi Kato , Shuji Tobashi , Masayuki Tsuchiya
IPC分类号： H01L27/146 , H04N5/378
CPC分类号： H01L27/14603 , H01L27/14643 , H01L27/14689 , H04N5/378
摘要： A solid-state image sensor is provided. The sensor includes a first transistor including a first diffusion region, a second transistor including a second diffusion region and an insulation film arranged over these transistors. The insulation film includes a first and a second film. A first portion of the first diffusion region covered with the insulation film includes a second portion covered with only the second film. A third portion of the second diffusion region covered with the insulation film includes a fourth portion covered with the first and second film. A stress in the fourth portion is larger than the second portion. A proportion of an area of the first portion except the second portion to an area of the first portion is lower than a proportion of an area of the fourth portion to an area of the third portion.
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公开(公告)号：US09681078B2
公开(公告)日：2017-06-13
申请号：US15007579
申请日：2016-01-27
IPC分类号： H04N5/335 , H01L27/148 , H01L27/00 , H04N5/372 , H01L27/146
CPC分类号： H04N5/372 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： An image sensor includes charge accumulation region of first conductivity type, floating diffusion of the first conductivity type, stacked semiconductor region having first region of second conductivity type arranged below the charge accumulation region, second region of the second conductivity type arranged above the first region, and third region of the second conductivity type arranged above the second region. The sensor further includes fourth region of the second conductivity type arranged in region between the charge accumulation region and the floating diffusion, below the floating diffusion, and above the stacked semiconductor region, transfer gate for transferring charges of the charge accumulation region to the floating diffusion, and fifth region of the second conductivity type arranged in region below the charge accumulation region and the fourth region, and above the stacked semiconductor region.
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公开(公告)号：US09136407B2
公开(公告)日：2015-09-15
申请号：US14026460
申请日：2013-09-13
发明人： Masayuki Tsuchiya
IPC分类号： H01L21/00 , H01L31/0232 , H01L31/18 , H01L27/146
CPC分类号： H01L31/02327 , H01L27/1461 , H01L27/14689 , H01L31/18
摘要： A method of manufacturing a solid-state image sensor having a first charge accumulation region, a second charge accumulation region, includes implanting ions into a semiconductor substrate through first and second openings of a mask to form the first and second charge accumulation regions. The implanting ions includes a first implantation of implanting ions into a portion below a first transfer gate, and a second implantation of implanting ions into a portion below a second transfer gate in a direction different from a direction of the first implantation.
摘要翻译： 制造具有第一电荷累积区域的第二电荷累积区域的固态图像传感器的方法包括通过掩模的第一和第二开口将离子注入到半导体衬底中，以形成第一和第二电荷累积区域。 注入离子包括将离子注入第一传输栅极下方的部分的第一注入，以及在与第一注入方向不同的方向上将离子注入第二传输栅极下方的部分的第二注入。
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公开(公告)号：US09013614B2
公开(公告)日：2015-04-21
申请号：US13750410
申请日：2013-01-25
发明人： Masayuki Tsuchiya
IPC分类号： H04N3/14 , H01L31/0232 , H04N5/374 , H01L31/18 , H01L27/146
CPC分类号： H01L31/0232 , H01L27/14603 , H01L27/1461 , H01L27/1462 , H01L27/14689 , H01L31/18 , H04N5/374
摘要： In a solid-state image pickup apparatus, a first insulating film continuously extends over at least part of a photoelectric conversion element and at least part of a gate electrode and further protrudes into a region above part of a floating diffusion region. A second insulating film is disposed above the first insulating film. The first insulating film has a higher dielectric constant than the second insulating film. An end of a part of the first insulating film protruding beyond an end of the gate electrode into the region above the floating diffusion region is located at a distance of 0.25 μm or less from an end, on a side of the floating diffusion region, of the gate electrode.
摘要翻译： 在固体摄像装置中，第一绝缘膜在光电转换元件的至少一部分和栅电极的至少一部分上连续地延伸，并进一步突出到浮动扩散区域的上方的区域中。 第二绝缘膜设置在第一绝缘膜的上方。 第一绝缘膜具有比第二绝缘膜更高的介电常数。 突出超过栅电极的端部到浮动扩散区域上方的区域的第一绝缘膜的一部分的端部位于距浮动扩散区域一侧的端部0.25μm以下的距离 栅电极。
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公开(公告)号：US20130194473A1
公开(公告)日：2013-08-01
申请号：US13750410
申请日：2013-01-25
发明人： Masayuki Tsuchiya
IPC分类号： H01L31/0232 , H01L31/18 , H04N5/374
CPC分类号： H01L31/0232 , H01L27/14603 , H01L27/1461 , H01L27/1462 , H01L27/14689 , H01L31/18 , H04N5/374
摘要： In a solid-state image pickup apparatus, a first insulating film continuously extends over at least part of a photoelectric conversion element and at least part of a gate electrode and further protrudes into a region above part of a floating diffusion region. A second insulating film is disposed above the first insulating film. The first insulating film has a higher dielectric constant than the second insulating film. An end of a part of the first insulating film protruding beyond an end of the gate electrode into the region above the floating diffusion region is located at a distance of 0.25 μm or less from an end, on a side of the floating diffusion region, of the gate electrode.
摘要翻译： 在固体摄像装置中，第一绝缘膜在光电转换元件的至少一部分和栅电极的至少一部分上连续地延伸，并进一步突出到浮动扩散区域的上方的区域中。 第二绝缘膜设置在第一绝缘膜的上方。 第一绝缘膜具有比第二绝缘膜更高的介电常数。 突出超过栅电极的端部到浮动扩散区域上方的区域的第一绝缘膜的一部分的端部位于距离浮动扩散区域一侧的端部0.25μm或更小的距离处 栅电极。
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公开(公告)号：US09966395B2
公开(公告)日：2018-05-08
申请号：US15415245
申请日：2017-01-25
发明人： Satoshi Kato , Shuji Tobashi , Masayuki Tsuchiya
IPC分类号： H01L27/146 , H04N5/378
CPC分类号： H01L27/14603 , H01L27/14643 , H01L27/14689 , H04N5/378
摘要： A solid-state image sensor is provided. The sensor includes a first transistor including a first diffusion region, a second transistor including a second diffusion region and an insulation film arranged over these transistors. The insulation film includes a first and a second film. A first portion of the first diffusion region covered with the insulation film includes a second portion covered with only the second film. A third portion of the second diffusion region covered with the insulation film includes a fourth portion covered with the first and second film. A stress in the fourth portion is larger than the second portion. A proportion of an area of the first portion except the second portion to an area of the first portion is lower than a proportion of an area of the fourth portion to an area of the third portion.
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