公开(公告)号：US20150274980A1

公开(公告)日：2015-10-01

申请号：US14432401

申请日：2013-08-16

申请人： CHEIL INDUSTRIES INC.

发明人： Hui-Chan Yun ,  Taek-Soo Kwak ,  Mi-Young Kim ,  Sang-Hak Lim ,  Kwen-Woo Han ,  Go-Un Kim ,  Bong-Hwan Kim ,  Sang-Kyun Kim ,  Yoong-Hee Na ,  Eun-Su Park ,  Jin-Hee Bae ,  Hyun-Ji Song ,  Han-Song Lee ,  Seung-Hee Hong

IPC分类号： C09D1/00 ,  H01L21/02 ,  H01B3/02

CPC分类号： C09D1/00 ,  B05D3/02 ,  B05D3/0254 ,  B05D3/0433 ,  C08G77/62 ,  C09D183/14 ,  C09D183/16 ,  H01B3/02 ,  H01B3/303 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/02337

摘要： Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

摘要翻译： 公开了一种包含氢化聚硅氮烷或氢化聚硅氧烷的二氧化硅基绝缘层的组合物，其中重均分子量小于400的环状化合物的浓度小于或等于1,200ppm。 用于二氧化硅基绝缘层的组合物可以在形成二氧化硅基绝缘层期间减小厚度分布，从而可以降低在半导体制造过程中化学机械抛光（CMP）之后的膜缺陷。

公开(公告)号：US09890255B2

公开(公告)日：2018-02-13

申请号：US14429512

申请日：2013-07-15

申请人： CHEIL INDUSTRIES INC.

发明人： Hyun-Ji Song ,  Eun-Su Park ,  Sang-Hak Lim ,  Taek-Soo Kwak ,  Go-Un Kim ,  Mi-Young Kim ,  Bo-Sun Kim ,  Bong-Hwan Kim ,  Yoong-Hee Na ,  Jin-Hee Bae ,  Jin-Woo Seo ,  Hui-Chan Yun ,  Han-Song Lee ,  Jong-Dae Jeon ,  Kwen-Woo Han ,  Seung-Hee Hong ,  Byeong-Gyu Hwang

IPC分类号： C08G77/54 ,  H01B3/46 ,  C09D183/16 ,  H01B3/30 ,  H01B3/02 ,  H01L21/02 ,  C09D183/02 ,  C09D183/14 ,  C08G77/60 ,  C08G77/62

CPC分类号： C08G77/54 ,  C08G77/60 ,  C08G77/62 ,  C09D183/02 ,  C09D183/14 ,  C09D183/16 ,  H01B3/02 ,  H01B3/303 ,  H01B3/46 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02255 ,  H01L21/0229 ,  H01L21/02326

摘要： Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

公开(公告)号：US09738787B2

公开(公告)日：2017-08-22

申请号：US14432401

申请日：2013-08-16

申请人： CHEIL INDUSTRIES INC.

发明人： Hui-Chan Yun ,  Taek-Soo Kwak ,  Mi-Young Kim ,  Sang-Hak Lim ,  Kwen-Woo Han ,  Go-Un Kim ,  Bong-Hwan Kim ,  Sang-Kyun Kim ,  Yoong-Hee Na ,  Eun-Su Park ,  Jin-Hee Bae ,  Hyun-Ji Song ,  Han-Song Lee ,  Seung-Hee Hong

IPC分类号： C08G77/54 ,  B05D3/02 ,  B05D3/04 ,  C09D1/00 ,  H01B3/46 ,  C08G77/62 ,  C09D183/14 ,  C09D183/16 ,  H01B3/30 ,  H01B3/02 ,  H01L21/02

CPC分类号： C09D1/00 ,  B05D3/02 ,  B05D3/0254 ,  B05D3/0433 ,  C08G77/62 ,  C09D183/14 ,  C09D183/16 ,  H01B3/02 ,  H01B3/303 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/02337

摘要： Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

公开(公告)号：US20150225508A1

公开(公告)日：2015-08-13

申请号：US14429512

申请日：2013-07-15

申请人： CHEIL INDUSTRIES INC.

发明人： Hyun-Ji Song ,  Eun-Su Park ,  Sang-Hak Lim ,  Taek-Soo Kwak ,  Go-Un Kim ,  Mi-Young Kim ,  Bo-Sun Kim ,  Bong-Hwan Kim ,  Yoong-Hee Na ,  Jin-Hee Bae ,  Jin-Woo Seo ,  Hui-Chan Yun ,  Han-Song Lee ,  Jong-Dae Jeon ,  Kwen-Woo Han ,  Seung-Hee Hong ,  Byeong-Gyu Hwang

IPC分类号： C08G77/54 ,  H01L21/02 ,  H01B3/02

CPC分类号： C08G77/54 ,  C08G77/60 ,  C08G77/62 ,  C09D183/02 ,  C09D183/14 ,  C09D183/16 ,  H01B3/02 ,  H01B3/303 ,  H01B3/46 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02255 ,  H01L21/0229 ,  H01L21/02326

摘要： Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

摘要翻译： 公开了通过氢化聚硅氧氮烷与选自聚硅烷，聚环硅烷和硅烷低聚物的硅烷化合物反应制备的改性氢化聚硅氧氮烷。 改性氢化聚硅氧氮烷相对于硅原子具有小的氮原子摩尔比，并且当包含在用于形成二氧化硅基绝缘层的二氧化硅基绝缘层形成用组合物中时，膜收缩率显着劣化。

公开(公告)号：US20140346391A1

公开(公告)日：2014-11-27

申请号：US14357689

申请日：2012-10-31

申请人： CHEIL INDUSTRIES INC.

发明人： Bong-Hwan Kim ,  Taek-Soo Kwak ,  Jin-Hee Bae ,  Hui-Chan Yun ,  Sang-Hak Lim ,  Sang-Kyun Kim ,  Jin-Wook Lee

IPC分类号： C09K13/00 ,  H01L21/02

CPC分类号： C09K13/00 ,  C08G77/62 ,  C09D183/16 ,  H01L21/0206 ,  H01L21/02087 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/31111

摘要： Provided is a rinse solution for a hydrogenated polysiloxazane thin film including an additive selected from an alcohol-based solvent, an ester-based solvent, a silanol-based solvent, an alkoxysilane-based solvent, an alkylsilazane-based solvent, and a combination thereof in an amount of 0.01 wt % to 7 wt % based on the total amount of the rinse solution.

摘要翻译： 本发明提供了一种氢化聚硅氧氮烷薄膜的漂洗溶液，其包括选自醇系溶剂，酯系溶剂，硅烷醇系溶剂，烷氧基硅烷系溶剂，烷基硅氮烷系溶剂及其组合的添加剂 相对于冲洗溶液的总量为0.01重量％〜7重量％。