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公开(公告)号：US07834383B2
公开(公告)日：2010-11-16
申请号：US12481056
申请日：2009-06-09
申请人： Chintamani P. Palsule , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
发明人： Chintamani P. Palsule , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14643 , H01L27/14601 , H01L29/66659 , H01L31/035281
摘要： A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.
摘要翻译： 包括具有第一导电类型并具有表面的衬底的像素，与第一导电类型相反的第二导电类型的光电检测器，第二导电类型的浮动扩散区域，光电检测器和浮动扩散区之间的传输区域 位于所述转印区域上方并且部分地与所述光电检测器重叠的栅极以及至少从所述栅极延伸穿过所述光电检测器的所述第一导电类型的钉扎层。 第一导电类型的沟道植入物从传输栅极的中点和浮动扩散延伸到至少跨越光电二极管并具有掺杂剂浓度，使得传输区域的掺杂剂浓度在接近光电检测器处比浮置 扩散，并且其中沟道注入的峰值掺杂剂浓度处于表面以下的水平和深度，使得当传输栅极通电时，在光电二极管和浮动扩散之间的传输区域中形成部分埋置的沟道。
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公开(公告)号：US20090250734A1
公开(公告)日：2009-10-08
申请号：US12481056
申请日：2009-06-09
申请人： CHINTAMANI P. PALSULE , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
发明人： CHINTAMANI P. PALSULE , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
IPC分类号： H01L31/06
CPC分类号： H01L27/14643 , H01L27/14601 , H01L29/66659 , H01L31/035281
摘要： A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.
摘要翻译： 包括具有第一导电类型并具有表面的衬底的像素，与第一导电类型相反的第二导电类型的光电检测器，第二导电类型的浮动扩散区域，光电检测器和浮动扩散区之间的传输区域 位于所述转印区域上方并且部分地与所述光电检测器重叠的栅极以及至少从所述栅极延伸穿过所述光电检测器的所述第一导电类型的钉扎层。 第一导电类型的沟道植入物从传输栅极的中点和浮动扩散延伸到至少跨越光电二极管并具有掺杂剂浓度，使得传输区域的掺杂剂浓度在接近光电检测器处比浮置 扩散，并且其中沟道注入的峰值掺杂剂浓度处于表面以下的水平和深度，使得当传输栅极通电时，在光电二极管和浮动扩散之间的传输区域中形成部分埋置的沟道。
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公开(公告)号：US07557397B2
公开(公告)日：2009-07-07
申请号：US11707848
申请日：2007-02-16
申请人： Chintamani P. Palsule , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
发明人： Chintamani P. Palsule , Changhoon Choi , Fredrick P. LaMaster , John H. Stanback , Thomas E. Dungan , Thomas Joy , Homayoon Haddad
CPC分类号： H01L27/14643 , H01L27/14601 , H01L29/66659 , H01L31/035281
摘要： A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.
摘要翻译： 包括具有第一导电类型并具有表面的衬底的像素，与第一导电类型相反的第二导电类型的光电检测器，第二导电类型的浮动扩散区域，光电检测器和浮动扩散区之间的传输区域 位于所述转印区域上方并且部分地与所述光电检测器重叠的栅极以及至少从所述栅极延伸穿过所述光电检测器的所述第一导电类型的钉扎层。 第一导电类型的沟道植入物从传输栅极的中点和浮动扩散延伸到至少跨越光电二极管并具有掺杂剂浓度，使得传输区域的掺杂剂浓度在接近光电检测器处比浮置 扩散，并且其中沟道注入的峰值掺杂剂浓度处于表面以下的水平和深度，使得当传输栅极通电时，在光电二极管和浮动扩散之间的传输区域中形成部分埋置的沟道。
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公开(公告)号：US07115924B1
公开(公告)日：2006-10-03
申请号：US11144304
申请日：2005-06-03
CPC分类号： H01L27/14643 , H01L27/14601 , H01L29/66659 , H01L31/035281
摘要： A pixel including a substrate of a first conductivity type, a photodetector of a second conductivity type that is opposite the first conductivity type and configured to convert incident light to a charge, a floating diffusion of the second conductivity, and a transfer region between the photodetector and floating diffusion. A gate is formed above the transfer region and partially overlaps the photodetector and is configured to transfer charge from the photodetector to the floating diffusion. A pinning layer of the first conductivity type extends at least across the photodetector from the gate. A channel region of the first conductivity type extends generally from a midpoint of the gate at least across the photodiode and is formed by an implant of a dopant of the first conductivity and having a concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than proximate to the floating diffusion.
摘要翻译： 包括第一导电类型的衬底的像素，与第一导电类型相反并被配置为将入射光转换成电荷的第二导电类型的光电检测器，第二导电率的浮动扩散以及光电检测器 和浮动扩散。 栅极形成在传输区域的上方，并且部分地与光电检测器重叠，并且被配置为将电荷从光电检测器转移到浮动扩散。 第一导电类型的钉扎层至少跨过光电检测器从栅极延伸。 第一导电类型的沟道区域至少跨越光电二极管从栅极的中点大致延伸并且由第一导电性的掺杂剂的注入形成，并且具有使得转移区域的掺杂剂浓度更大的浓度 到光电探测器，而不是靠近浮动扩散。
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公开(公告)号：US20090081822A1
公开(公告)日：2009-03-26
申请号：US12273123
申请日：2008-11-18
IPC分类号： H01L21/02
CPC分类号： H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/14685
摘要： A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer, and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.
摘要翻译： 一种半导体集成电路结构及其制造方法。 半导体集成电路结构包括与半导体衬底整体的光敏器件，设置在光敏器件上的覆盖电介质层，以及设置在覆盖电介质层上的透镜形成电介质层。 光通过覆盖电介质层透过透镜形成电介质层。 透镜形成电介质层形成嵌入的凸形微透镜。 微透镜将光引导到光敏设备上。
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公开(公告)号：US07459733B2
公开(公告)日：2008-12-02
申请号：US11716863
申请日：2007-03-12
IPC分类号： H01L27/148
CPC分类号： H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/14685
摘要： A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable through the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.
摘要翻译： 一种半导体集成电路结构及其制造方法。 半导体集成电路结构包括与半导体衬底整体的光敏器件，设置在光敏器件上的覆盖电介质层，以及设置在覆盖电介质层上的透镜形成电介质层。 光通过覆盖电介质层可传输; 并透过透镜形成电介质层。 透镜形成电介质层形成嵌入的凸形微透镜。 微透镜将光引导到光敏设备上。
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公开(公告)号：US07704780B2
公开(公告)日：2010-04-27
申请号：US12273123
申请日：2008-11-18
IPC分类号： H01L21/00
CPC分类号： H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/14685
摘要： A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer, and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.
摘要翻译： 一种半导体集成电路结构及其制造方法。 半导体集成电路结构包括与半导体衬底整体的光敏器件，设置在光敏器件上的覆盖电介质层，以及设置在覆盖电介质层上的透镜形成电介质层。 光通过覆盖电介质层透过透镜形成电介质层。 透镜形成电介质层形成嵌入的凸形微透镜。 微透镜将光引导到光敏设备上。
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公开(公告)号：US07208783B2
公开(公告)日：2007-04-24
申请号：US10984670
申请日：2004-11-09
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/14685
摘要： A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.
摘要翻译： 一种半导体集成电路结构及其制造方法。 半导体集成电路结构包括与半导体衬底整体的光敏器件，设置在光敏器件上的覆盖电介质层，以及设置在覆盖电介质层上的透镜形成电介质层。 光通过覆盖电介质层可传输; 并透过透镜形成电介质层。 透镜形成电介质层形成嵌入的凸形微透镜。 微透镜将光引导到光敏设备上。
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9.发明授权Multi-lens imaging systems and methods using optical filters having mosaic patterns 有权使用具有马赛克图案的滤光片的多透镜成像系统和方法公开(公告)号：US07483065B2
公开(公告)日：2009-01-27
申请号：US11016376
申请日：2004-12-15
CPC分类号： H04N9/045
摘要： Imaging systems and methods are provided. One exemplary system incorporates multiple lenses that are individually configured to receive visible light from an object to be imaged, and to direct this light upon a corresponding sensor array. Luminance information is then derived from signals generated in one or more of the sensor arrays. When chrominance information is desired, an optical filter is interposed between a lens and the corresponding sensor array. The mosaic pattern contained in the optical filter is tailored to provide advantageous chrominance information. One or more such filters with different mosaic patterns may be employed. The luminance and chrominance information obtained from the sensor arrays are combined to generate an image of the object.
摘要翻译： 提供成像系统和方法。 一个示例性系统包括多个透镜，其被单独配置为接收来自待成像对象的可见光，并将该光引导到相应的传感器阵列上。 然后从在一个或多个传感器阵列中产生的信号导出亮度信息。 当需要色度信息时，在透镜和相应的传感器阵列之间插入滤光器。 包含在滤光器中的马赛克图案被定制以提供有利的色度信息。 可以采用具有不同镶嵌图案的一个或多个这样的滤光片。 从传感器阵列获得的亮度和色度信息被组合以产生对象的图像。
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10.发明授权System and method for detecting and correcting defective pixels in a digital image sensor 有权用于检测和校正数字图像传感器中的有缺陷的像素的系统和方法公开(公告)号：US07460688B2
公开(公告)日：2008-12-02
申请号：US11007979
申请日：2004-12-09
IPC分类号： G06K9/00
CPC分类号： H04N5/367
摘要： A digital image sensor comprising an array of pixels and a processor is provided. The array of pixels comprises a current pixel in a first color plane that is configured to produce a current sensor value, a first plurality of pixels in the first color plane that is configured to produce a first plurality of sensor values, and a second plurality of pixels in the second color plane that is configured to produce a second plurality of sensor values. The processor is configured to generate a plurality of estimate values using the first plurality of sensor values and a plurality of intensity ratios associated with the second plurality of sensor values, and the processor is configured to determine whether the current pixel is defective using the plurality of estimate values and the current sensor value.
摘要翻译： 提供了包括像素阵列和处理器的数字图像传感器。 像素阵列包括被配置为产生电流传感器值的第一颜色平面中的当前像素，被配置为产生第一多个传感器值的第一颜色平面中的第一多个像素，以及第二多个 被配置为产生第二多个传感器值的第二颜色平面中的像素。 处理器被配置为使用第一多个传感器值和与第二多个传感器值相关联的多个强度比来生成多个估计值，并且处理器被配置为使用多个传感器值来确定当前像素是否有缺陷 估计值和当前传感器值。
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