METHOD OF STRIPPING PHOTORESIST
    2.
    发明申请

    公开(公告)号:US20230102718A1

    公开(公告)日:2023-03-30

    申请号:US17860224

    申请日:2022-07-08

    发明人: Hsueh-Shun Yeh

    IPC分类号: G03F7/42 G03F7/11

    摘要: A method of stripping photoresist includes the steps of pattering a photoresist located on a substrate to generate an opening showing the substrate, forming a film including a first portion located on a top surface of the photoresist and a second portion located on a surface of the substrate, attaching a tape on the first portion, removing the tape and the first portion to show the top surface of the photoresist, and contacting the top surface and a lateral surface of the photoresist with a photoresist stripping solution to strip the photoresist. The photoresist can be removed completely by increasing its contacting area with the photoresist stripping solution.