摘要:
Disclosed is a method for manufacturing a template. The method includes growing a first nitride layer containing a Group-III material on a substrate; forming a plurality of etch barriers having different etching characteristics from the first nitride layer on the first nitride layer; forming a pillar-shaped nano structure by etching the first nitride layer in a pattern of the etch barriers using a chloride-based gas; and forming the nitride buffer layer having a plurality of voids formed therein by growing a second nitride layer on top of the nano structure. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed.
摘要:
Disclosed herein is a method for manufacturing a template. The method includes growing a first nitride layer on a substrate; etching a top surface of the first nitride layer by supplying a chloride-based etching gas thereto; forming a plurality of first voids by growing a second nitride layer on the top surface of the first nitride layer; etching a top surface of the second nitride layer by supplying the etching gas thereto; and forming a plurality of second voids by growing a third nitride layer on the top surface of the second nitride layer. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed. As a result, stress between lattices and dislocation defects are reduced by a plurality of voids formed in a nitride buffer layer, thereby improving quality of nitride layers grown in a template. In the case where a light emitting device is manufactured using the template, it is possible to improve workability of the manufacturing process and to enhance luminous efficacy of the light emitting device.