公开(公告)号：US20110042711A1

公开(公告)日：2011-02-24

申请号：US12650626

申请日：2009-12-31

申请人： Yu-hang CHOI ,  Chae-seok LIM ,  Keuk KIM ,  Chi-kwon PARK

发明人： Yu-hang CHOI ,  Chae-seok LIM ,  Keuk KIM ,  Chi-kwon PARK

IPC分类号： H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/22

摘要： The present invention relates to III-nitride semiconductor light emitting device and a method for fabricating the same. The III-nitride semiconductor light emitting device includes: a substrate; a plurality of III-nitride semiconductor layers grown over the substrate and including an active layer for generating light by recombination of electrons and holes; and a protrusion formed on a surface of the substrate over which the semiconductor layers are to be grown, a section of the protrusion which is in parallel to the growth direction of the semiconductor layers being formed in a triangular shape.

摘要翻译： 本发明涉及III族氮化物半导体发光器件及其制造方法。 III族氮化物半导体发光器件包括：衬底; 在衬底上生长的多个III族氮化物半导体层，包括通过电子和空穴的复合产生光的有源层; 以及形成在所述基板的要生长半导体层的表面上的突起，所述突起的与所述半导体层的生长方向平行的部分形成为三角形。

公开(公告)号：US20120187445A1

公开(公告)日：2012-07-26

申请号：US13189564

申请日：2011-07-25

申请人： CHUNG-SEOK OH ,  Sung-Hwan Jang ,  Ho-Il Jung ,  Chi-Kwon Park ,  Kun Park

发明人： CHUNG-SEOK OH ,  Sung-Hwan Jang ,  Ho-Il Jung ,  Chi-Kwon Park ,  Kun Park

IPC分类号： H01L33/62 ,  C30B25/02

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0257 ,  H01L21/0262 ,  H01L21/02647 ,  H01L33/0066 ,  H01L33/0079 ,  Y10T117/10

摘要： Disclosed is a method for manufacturing a template. The method includes growing a first nitride layer containing a Group-III material on a substrate; forming a plurality of etch barriers having different etching characteristics from the first nitride layer on the first nitride layer; forming a pillar-shaped nano structure by etching the first nitride layer in a pattern of the etch barriers using a chloride-based gas; and forming the nitride buffer layer having a plurality of voids formed therein by growing a second nitride layer on top of the nano structure. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed.

摘要翻译： 公开了一种制造模板的方法。 该方法包括在衬底上生长含有III族材料的第一氮化物层; 在所述第一氮化物层上形成具有与所述第一氮化物层不同的蚀刻特性的多个蚀刻阻挡层; 通过使用基于氯化物的气体以蚀刻阻挡层的图案蚀刻第一氮化物层来形成柱状纳米结构; 以及通过在所述纳米结构的顶部生长第二氮化物层，形成具有多个空隙的所述氮化物缓冲层。 还公开了使用该模板的氮化物系半导体发光元件的制造方法。

公开(公告)号：US20120187444A1

公开(公告)日：2012-07-26

申请号：US13189530

申请日：2011-07-24

申请人： CHUNG-SEOK OH ,  Sung-Hwan Jang ,  Ho-Il Jung ,  Chi-Kwon Park ,  Kun Park

发明人： CHUNG-SEOK OH ,  Sung-Hwan Jang ,  Ho-Il Jung ,  Chi-Kwon Park ,  Kun Park

IPC分类号： H01L33/62 ,  C30B25/02

CPC分类号： H01L21/02458 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02656 ,  H01L33/007 ,  H01L33/025 ,  H01L33/22 ,  Y10T117/10

摘要： Disclosed herein is a method for manufacturing a template. The method includes growing a first nitride layer on a substrate; etching a top surface of the first nitride layer by supplying a chloride-based etching gas thereto; forming a plurality of first voids by growing a second nitride layer on the top surface of the first nitride layer; etching a top surface of the second nitride layer by supplying the etching gas thereto; and forming a plurality of second voids by growing a third nitride layer on the top surface of the second nitride layer. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed. As a result, stress between lattices and dislocation defects are reduced by a plurality of voids formed in a nitride buffer layer, thereby improving quality of nitride layers grown in a template. In the case where a light emitting device is manufactured using the template, it is possible to improve workability of the manufacturing process and to enhance luminous efficacy of the light emitting device.

摘要翻译： 本文公开了一种制造模板的方法。 该方法包括在衬底上生长第一氮化物层; 通过向其提供氯化物蚀刻气体来蚀刻第一氮化物层的顶表面; 通过在第一氮化物层的顶表面上生长第二氮化物层来形成多个第一空隙; 通过向其提供蚀刻气体来蚀刻第二氮化物层的顶表面; 以及通过在所述第二氮化物层的顶表面上生长第三氮化物层而形成多个第二空隙。 还公开了使用该模板的氮化物系半导体发光元件的制造方法。 结果，通过在氮化物缓冲层中形成的多个空隙来减小晶格和位错缺陷之间的应力，从而提高在模板中生长的氮化物层的质量。 在使用模板制造发光器件的情况下，可以提高制造工艺的可加工性并提高发光器件的发光效率。

公开(公告)号：US20100224894A1

公开(公告)日：2010-09-09

申请号：US12650229

申请日：2009-12-30

申请人： Keuk KIM ,  Yu-hang CHOI ,  Chae-seok LIM ,  Chi-kwon PARK

发明人： Keuk KIM ,  Yu-hang CHOI ,  Chae-seok LIM ,  Chi-kwon PARK

IPC分类号： H01L33/00 ,  H01L21/302

CPC分类号： H01L33/22 ,  H01L33/007

摘要： The present disclosure relates to a III-nitride semiconductor light emitting device, including: a substrate; a plurality of III-nitride semiconductor layers grown over the substrate and including an active layer generating light by recombination of electrons and holes; a scattering surface provided on the substrate to scatter the light generated in the active layer; and a sub-scattering portion ruggedly formed on the scattering surface.

摘要翻译： 本公开涉及一种III族氮化物半导体发光器件，包括：衬底; 在衬底上生长的多个III族氮化物半导体层，包括通过电子和空穴的复合产生光的有源层; 设置在所述基板上以散射在所述有源层中产生的光的散射表面; 以及在散射面上粗糙地形成的副散射部。