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公开(公告)号：US09520528B2
公开(公告)日：2016-12-13
申请号：US14428555
申请日：2013-09-16
发明人： Sébastien Dubois , Nicolas Enjalbert , Jean-Paul Garandet , Pierre Gidon , Florent Tanay , Jordi Veirman
CPC分类号： H01L31/186 , H01L31/04 , H01L31/18 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A restoration device of at least one silicon-based photovoltaic solar cell is provided with a support of the cell and a charge carriers generator configured to generate charge carriers in the photovoltaic solar cell. The device is further provided with a tank designed to be filled by a liquid, and the support is configured to place the photovoltaic solar cell in the liquid.
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公开(公告)号：US10371657B2
公开(公告)日：2019-08-06
申请号：US14909230
申请日：2014-08-01
发明人： Jordi Veirman , Sébastien Dubois
摘要： A method for determining the original position of a wafer in an ingot made from semiconductor material comprises the following steps: measuring the interstitial oxygen concentration in an area of the wafer; measuring the concentration of thermal donors formed in said area of the wafer during a previous solidification of the ingot; determining the effective time of a thermal donor formation anneal undergone by the wafer when solidification of the ingot took place, from the thermal donor concentration and the interstitial oxygen concentration; and determining the original position of the wafer in the ingot from the effective time.
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公开(公告)号：US09938639B2
公开(公告)日：2018-04-10
申请号：US14437955
申请日：2013-10-23
CPC分类号： C30B33/02 , B28D1/22 , B28D5/0011 , C30B29/06 , F27D19/00 , F27D21/00 , G01N27/041
摘要： A method for forming a silicon ingot includes the following steps: providing a silicon ingot of variable electrical resistivity and containing interstitial oxygen, determining the interstitial oxygen concentration in different areas of the silicon ingot, calculating the concentration of thermal donors to be created in the different areas to reach a target value of the electrical resistivity, and subjecting the different areas of the silicon ingot to annealing so as to form the thermal donors. The annealing temperature in each area is determined from the thermal donor and interstitial oxygen concentrations of the area and from a predefined annealing time.
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4.发明授权Device and method for restoring silicon-based solar cells using an ultrasound transducer 有权使用超声换能器恢复硅基太阳能电池的装置和方法公开(公告)号：US09484483B2
公开(公告)日：2016-11-01
申请号：US14428559
申请日：2013-09-16
发明人： Sébastien Dubois , Nicolas Enjalbert , Jean-Paul Garandet , Pierre Gidon , Florent Tanay , Jordi Veirman
IPC分类号： H01L31/18 , H01L31/04 , H01L31/028 , H02S99/00
CPC分类号： H01L31/1864 , H01L31/028 , H01L31/04 , H01L31/182 , H01L31/186 , H02S99/00 , Y02E10/546 , Y02P70/521 , Y10T29/41
摘要： The restoration device of least one silicon-based photovoltaic solar cell includes a support of the cell, a heat source configured to heat the photovoltaic solar cell, and unit for generating charge carriers in the cell. To better accelerate the restoration kinetics of the solar cell, the device includes an ultrasonic transducer designed to generate ultrasonic waves propagating in the photovoltaic solar cell.
摘要翻译： 至少一个硅基光伏太阳能电池的恢复装置包括电池的支撑体，被配置为加热光伏太阳能电池的热源和用于在电池中产生电荷载流子的单元。 为了更好地加速太阳能电池的恢复动力学，该装置包括设计用于在光伏太阳能电池中传播超声波的超声波换能器。
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5.发明申请公开(公告)号：US20150236190A1
公开(公告)日：2015-08-20
申请号：US14428555
申请日：2013-09-16
发明人： Sébastien Dubois , Nicolas Enjalbert , Jean-Paul Garandet , Pierre Gidon , Florent Tanay , Jordi Veirman
IPC分类号： H01L31/18
CPC分类号： H01L31/186 , H01L31/04 , H01L31/18 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A restoration device of at least one silicon-based photovoltaic solar cell is provided with a support of the cell and a charge carriers generator configured to generate charge carriers in the photovoltaic solar cell. The device is further provided with a tank designed to be filled by a liquid, and the support is configured to place the photovoltaic solar cell in the liquid.
摘要翻译： 至少一个硅基光伏太阳能电池的恢复装置设置有电池的支撑体和配置成在光伏太阳能电池中产生电荷载流子的电荷载流子发生器。 该装置还设置有设计成由液体填充的罐，并且支撑件被配置为将光伏太阳能电池放置在液体中。
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