公开(公告)号：US20130252399A1

公开(公告)日：2013-09-26

申请号：US13784001

申请日：2013-03-04

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

Inventor： Patrick LEDUC

IPC: H01L21/02

CPC classification number: H01L21/0226 ,  H01L21/187 ,  H01L23/293 ,  H01L24/05 ,  H01L24/80 ,  H01L2221/1047 ,  H01L2224/05186 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/08147 ,  H01L2224/80007 ,  H01L2224/8001 ,  H01L2224/80201 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/04941 ,  H01L2924/04953

Abstract: A method for direct bonding between a first element and a second element, including at least the following steps: deposition of at least one first porous layer on at least one face of the first element, where the first porous layer is compressible, production of at least one bonding layer on the first porous layer, rigid connection by direct bonding of the second element with the first bonding layer.

Abstract translation: 一种用于在第一元件和第二元件之间直接结合的方法，至少包括以下步骤：在第一元件的至少一个表面上沉积至少一个第一多孔层，其中第一多孔层是可压缩的， 在第一多孔层上的至少一个结合层，通过第二元件与第一粘结层的直接接合来进行刚性连接。